Homework Answers
Note-: in question, it does not specify which type of doping applied in semiconductor. So i have draw for both n type and p type doping.
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(ii) Sketch the energy band diagram of this doped material in (i) at 0 K and...
(a) You need to dope Si to produce free positive charge carriers. (1) Explain how this...
(a) You need to dope Si to produce free positive charge carriers. (1) Explain how this process will be achieved by sketching a 2D representation of the Si crystal lattice to show the effect of this doping process. Clearly explain what impurities you will use for this process. (ii) Sketch the energy band diagram of this doped material in (i) at 0 K and identify all the important features in your diagram. (iii) Now sketch the same energy band diagram...
9. Sketch the Energy Band Diagram for an (a) n-type material and (b) p-type material and...
9. Sketch the Energy Band Diagram for an (a) n-type material and (b) p-type material and identify the majority and minority carriers for each band diagram. Label ALL energy bands.
1. (a) Draw the band diagram for phosphorous doped silicon, including both the majority and minority...
1. (a) Draw the band diagram for phosphorous doped silicon, including both the majority and minority carriers as well as any dopant levels. Provide the expression for the minority carrier density in terms of the majority carrier density. Show all your steps and label clearly. (b) Draw the band diagram for boron doped silicon, including both the majority and minority carriers as well as any dopant levels. Provide the expression for the minority carrier density in terms of the majority...
4. Si MOS capacitor (tox10 nm, 3.9; Nd 1015 cm-3) (a) Draw the energy band diagram if the capacit...
4. Si MOS capacitor (tox10 nm, 3.9; Nd 1015 cm-3) (a) Draw the energy band diagram if the capacitor is biased to accumulation Label all important parts and energy levels. (b) Redraw the diagram now for the case at minimum capacitance. Derive the expression for the minimum capacitance and then calculate what this value is.
4. Si MOS capacitor (tox10 nm, 3.9; Nd 1015 cm-3) (a) Draw the energy band diagram if the capacitor is biased to accumulation Label all...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a...
Draw the energy band diagram at equilibrium for the p+ /n/p semiconductor heterostructure (p+ indicates a p-type semiconductor which is heavily doped, i.e., more heavily doped than p). You should indicate Ec (conduction band), Ev (valence band), Ei (intrinsic Fermi level), and Ef (Fermi level) throughout the device structure. show your work (i.e., you should start from the diagram of individual material pieces). State any reason for your drawing.
2. The band diagram of a uniformly doped semiconductor is drawn below with V=0. (a) (10...
2. The band diagram of a uniformly doped semiconductor is drawn below with V=0. (a) (10 pts) Sketch the band diagram with V>0. (6) (10 pts) Show with an arrow next to the electrons and holes, the directions of the electron velocities, Vn, and the hole velocities, Vp- (c) (10 pts) Show with an arrow, which way the electric field is pointing. (d) (10 pts) Show with arrows, which way the electrical current due to electrons, Jn, is flowing. (e)...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of E above and below EF. 2. Find (EP) 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05...
Please explain part b in details thx! Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019...
Please explain part b in details thx!
Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E above and below EF. 2. Find f(EP). 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05 eV,...
b) [i], [ii], [iii], [iv] b) i) Using colours and a legend, sketch a diagram of...
b) [i], [ii], [iii], [iv]
b) i) Using colours and a legend, sketch a diagram of 4 molecules of ammonia inside a sealed container and another diagram of the same container after the reaction is complete. Reactants Products ii) How many molecules of each product are formed when 4 molecules of ammonia react? iii) What is the simplest ratio of molecules of reactants and products? iv) Relate your answer for question (iii) above, to the balanced chemical equation for the...
(a) You need to dope Si to produce free positive charge carriers. (1) Explain how this process will be achieved by sketching a 2D representation of the Si crystal lattice to show the effect of this doping process. Clearly explain what impurities you will use for this process. (ii) Sketch the energy band diagram of this doped material in (i) at 0 K and identify all the important features in your diagram. (iii) Now sketch the same energy band diagram...
9. Sketch the Energy Band Diagram for an (a) n-type material and (b) p-type material and identify the majority and minority carriers for each band diagram. Label ALL energy bands.
1. (a) Draw the band diagram for phosphorous doped silicon, including both the majority and minority carriers as well as any dopant levels. Provide the expression for the minority carrier density in terms of the majority carrier density. Show all your steps and label clearly. (b) Draw the band diagram for boron doped silicon, including both the majority and minority carriers as well as any dopant levels. Provide the expression for the minority carrier density in terms of the majority...
4. Si MOS capacitor (tox10 nm, 3.9; Nd 1015 cm-3) (a) Draw the energy band diagram if the capacitor is biased to accumulation Label all important parts and energy levels. (b) Redraw the diagram now for the case at minimum capacitance. Derive the expression for the minimum capacitance and then calculate what this value is.
4. Si MOS capacitor (tox10 nm, 3.9; Nd 1015 cm-3) (a) Draw the energy band diagram if the capacitor is biased to accumulation Label all...
2. The band diagram of a uniformly doped semiconductor is drawn below with V=0. (a) (10 pts) Sketch the band diagram with V>0. (6) (10 pts) Show with an arrow next to the electrons and holes, the directions of the electron velocities, Vn, and the hole velocities, Vp- (c) (10 pts) Show with an arrow, which way the electric field is pointing. (d) (10 pts) Show with arrows, which way the electrical current due to electrons, Jn, is flowing. (e)...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of E above and below EF. 2. Find (EP) 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05...
Please explain part b in details thx!
Question 2 At 300 K, the bandgap of GaP is 2.26 eV and the effective density of states at the conduction and valence band edge are 1.8 x 1019 cm23 and 1.9 x 1019 cm3, respectively. (a) Calculate the intrinsic concentration of GaP at 300K (7 marks) Calculate the GaP effective mass of holes at 300K. (b) (8 marks) (c The GaP sample is now doped with donor concentration of 1021 cm3 with...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E above and below EF. 2. Find f(EP). 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05 eV,...
b) [i], [ii], [iii], [iv]
b) i) Using colours and a legend, sketch a diagram of 4 molecules of ammonia inside a sealed container and another diagram of the same container after the reaction is complete. Reactants Products ii) How many molecules of each product are formed when 4 molecules of ammonia react? iii) What is the simplest ratio of molecules of reactants and products? iv) Relate your answer for question (iii) above, to the balanced chemical equation for the...
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