Determine and sketch Vo for the network in Figure Q1(a) when (i) ideal diode and (ii) Silicon diode is used.
Determine and sketch Vo for the network in Figure Q1(a) when (i) ideal diode and (ii) Silicon diode is used.
Q.1 Sketch v0 for the network of Figure Q1.Q.2 Briefly define with diagrams the internal depletion capacitance of a pn junction diode. Also highlight its importance.
Q1. i) Will the current flow from A to C, for the connection shown in Figure. 12 Support your answer (11 with proper reasons. Both D1 and D2 are silicon diodes. D1 D2 A_* B Figure 1 ii) Draw the equivalent circuit diagram for Ideal Diode under forward bias and reverse bias. iii) Determine the value of I for the circuit shown in Figure. 2 R - 5V 15.2 V 5 kΩ Ge Figure 2 iv) Compute Vo and Ir...
Ql. Find Vo in the circuit with (i) Ideal diode model. (ii) PWL model (Vf: 0.6 V, r,-10 Ω). 100 Ω 100 Ω D1 100 Ω 1 v 10 V( 10 mA 100 Ω
5. Determine whether each silicon diode in Figure 2-92 is forward-biased or reverse-biased. 6. Determine the voltage across each diode in Figure 2-92, assuming the practical model. 7. Determine the voltage across each diode in Figure 2-92, assuming an ideal diode. 8. Determine the voltage across each diode in Figure 2-92, using the complete diode model with ra = 10 1 and rk = 100 MO. 100V 102 35600 { 5
41) Given the following circuit, determine the voltage across the diode. (Assume ideal silicon diode) [1 mark] a. OV 10 K2 10 k2 b. 4V c. 8V d. 0.7V
Assume the diode turn-on is .7 for each diode. Determine Vo when VI is a) 5v and b) -5v 5. Assume the diode turn-on voltage is Vy=0.7V for each diode in the circuit. Determine Vo when (a) Vi =5V, and (b) Vi =5V (10 pts) 5.7 Žion SION wt 3102
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
Prob. 2. For the following circuit, i. Draw the transfer characteristic of the circuit (Sketch Vo(t) vs Vin(t)). ii. Sketch the output waveform, v.(t) for the input Vin(t) = 10 Sin(wt) V. Clearly indicate the status of each diode. Assume that both D, and D, are ideal diodes. Table: Possible Diode States # D1 D2 Result 1 Off Off 2 Off On 3 On Off | 4 On On + TOKS VD . >19
b) For the circuit shown in Figure Q1(b) below, the voltage source is 18 V. Determine Vo, Voz and /. [CO2/PO3/C4] (10 marks) Vo1 0.47 k 1 ka Vo2 Si 18 V Si Figure Q1(b) For the circuit shown in Figure Q1(b) below, the voltage source is 18 V. Determine b) Vot, Voz and / [CO2/PO3/C4] (10 marks) Vof 1 ka 0.47 kn Vo2 ZSI 18 V Figure Q1(b) ) Figure Q1(c) shows a basic voltage regulator circuit. Determine Vi,...
ELTR 197 Analog Determine whether each silicon diode is forward or reverse biased. a) 1. b) 10ka 100V B) Forward Bia sE OForwod Biase 5600 5V 8V d) 10KO 10ka 1.0kn $1.5kn -20V 10V -30V 4.7ka 4.7kQ 2. Using the practical diode model, determine the values of VR1, Vr2, and Vo. Vo R1 4 k7 D1 hika 22KS) R2 10V Via- 5V 13 -n the forward current of a diode with 1. Determine whether each silicon diode is forward or...