The figure shows band diagram of a BJT structure
under bias.
a) Name the semiconductor types, biasing mode
(Plot base, emitter and collector and voltage polarities) and
the
carrier types shown in figure (majority or minority). Plot
clearly BJT structure and charge flow.
b) If we connect two diodes to form pn-np or np-pn structure
it
will not behave like a BJT transistor. Explain why (one or
two
sentences).
Please help me , i dont have too much time
The figure shows band diagram of a BJT structure under bias. a) Name the semiconductor types,...
draw a base biased circuit and refered to question 5 and complete table. please draw the fixed bias diagram circuit and follow throught step on the next question. Figure 1. Bipolar junction transistor under base bias/fixed bias 5. In the circuit drawn in Figure 1, label the components with the following values: Base voltage, Collector voltage10V Base resistance Collector resistance Base - emitter voltage 2.7 k2 0.7 V 160 6. Connect the circuit drawn in Figure 1 on the breadboard....
Please do d e and f (15 pts) 14. The energy band diagram for an ideal MOS-C under a specific gate bias is shown below. The device is maintained at T 300 K, kTiq 0.026 V, n, 1010 cm Note that E EF at the surface of the semiconductor. Answer the following questions. (d) Determine the surface potential s. (3 pts) EFM 0.24eVEc (e) Determine Dr. (3 pts) E, 0437 ev Ev 0 (a) What biasing mode is this MOS-C...
E 4.20P) The figure shows ban diagram of a Si PN junction diode. Before solution choose suitable values of a,b and c and show this numbers clearly in a box. a) Calculate the carrier densities plot across the junction (n=1.5 1019 b)If you apply reverse bias of 1 V how the carrier densities will change across the junction Calculate and plot. ceV Ey- Evp I aev -1 beva En EF En Ev
Could someone please help me on how I should be configuring the circuit in Figure 4(a) in Multisim? Basically not understanding question #1 in the Procedure. Cannot keep Vrb the same value while adjusting Vcc. Then when trying to adjust Vbb to hold Vrb, Ib changes. Any help is appreciated! Discrete Devices Section LAB 4 BJT CHARACTERISTICS AND BIASING Objective: The objective of this laboratory is to examine the operation of a bipolar junction transistor and plot its output characteristics...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...