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1 pts Design the circuit below to obtain a de voltage of +0.1 V at each...
uestion 5 marks For the amplifier circuit shown, let Voo -5 V, v-0.7 V, and k-1 mA/V2, the circuit has a voltage gain o...
uestion 5 marks For the amplifier circuit shown, let Voo -5 V, v-0.7 V, and k-1 mA/V2, the circuit has a voltage gain of (-25 V/V) and an input resistance of (0.5ΜΩ). (a)Calculate Rg and RD (b)Determine Vov,ID (4 Mark) (4 Mark) (c) What is the maximum v,?' d)Sketch v,against voNr Vo ρη
uestion 5 marks For the amplifier circuit shown, let Voo -5 V, v-0.7 V, and k-1 mA/V2, the circuit has a voltage gain of (-25 V/V) and...
Q3) Design the circuit of that is, determine the values of RD and RS so that...
Q3) Design the circuit of that is, determine the values of RD and RS so that the transistor operates at ID = 0.4 mA and Vp=+0.5 V. The NMOS transistor has V = 0.7 V, H, Cox= 100 A/V2, L = 1 pm, and W = 32 m. Neglect the channel-length modulation effect (i.e., assume that I = 0). Vpp = +2.5 V Z RO V--25 V
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH...
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 k...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
short answer please Design the circuit in Fig. to establish a drain voltage of 0.1 V....
short answer please
Design the circuit in Fig. to establish a drain voltage of 0.1 V. Let V=1V and K (WIL) = 1 mA/V? Vpp = +5V 16 Ro Vo - 01V 4.2 kohm 12.4 Kohm 2.2 kohm 2.4 Kohm
10 V 10 V R1 Uo R2 Fig.1 CS Amplifier (2) 12 pts] Consider the circuit...
10 V 10 V R1 Uo R2 Fig.1 CS Amplifier (2) 12 pts] Consider the circuit for a CS amplifier shown in Fig.1 above. This time around, let λ-0.05 V-1 and kn-0.1 mA/V". Also, VDD-10 V and RD-5 kf2. Given that the output resistance of the amplifier (seen looking to the left of the output coupling capacitor) should be no less than 80% of RD, what is the maximun value of gm that can be achieved? Compute the associated values...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
6.108 (d) Section 6.5: Discrete-Circuit Amplifiers 6.107 Calculate overall voltage gain G, of a 3 mA/V, ro= = 1...
6.108 (d)
Section 6.5: Discrete-Circuit Amplifiers 6.107 Calculate overall voltage gain G, of a 3 mA/V, ro= = 10 MS2. The amplifier is the common-source amplifier for which g 100 k2, RD 10 k2, and RG fed from a signal source with a Thevenin resistance of l M2, and the amplifier output is coupled of 20 k2 to a load resistance SIM 6.108 The NMOS transistor in the CS amplifier shown in Fig. P6.108 has V, = 0.7 V and...
uestion 5 marks For the amplifier circuit shown, let Voo -5 V, v-0.7 V, and k-1 mA/V2, the circuit has a voltage gain of (-25 V/V) and an input resistance of (0.5ΜΩ). (a)Calculate Rg and RD (b)Determine Vov,ID (4 Mark) (4 Mark) (c) What is the maximum v,?' d)Sketch v,against voNr Vo ρη
uestion 5 marks For the amplifier circuit shown, let Voo -5 V, v-0.7 V, and k-1 mA/V2, the circuit has a voltage gain of (-25 V/V) and...
Q3) Design the circuit of that is, determine the values of RD and RS so that the transistor operates at ID = 0.4 mA and Vp=+0.5 V. The NMOS transistor has V = 0.7 V, H, Cox= 100 A/V2, L = 1 pm, and W = 32 m. Neglect the channel-length modulation effect (i.e., assume that I = 0). Vpp = +2.5 V Z RO V--25 V
QUESTION (1) Transistor Mi in this common base amplifier circuit has the following characteristics: +Vc VTH =1 V Rp R, C. K 1 mA/V2 2 0.1 R Given: Vcc 2 mA, 10 V, lbias Ct C2 0, 5 k2, RD 2 k2 RI 10 k, R2 R (12 points) a) Determine the small signal gain, vo/Vin. (4 points) b) Determine the input resistance, Rin. (4 points) c) Determine the output resistance, Ro. Useful formulae: for n-channel MOSFET triode region =...
3. In the circuit shown below, the differential pair (Mand M2) is biased with a current miror that consists of M3, M and Rref. The circuit parameters are: VDD-3 V, Rre/-15 ka, RD = 20 ka, and RL-40 kn. The transistors 25 M, and M, are identicalwith()M and M, are identical with (The oh M and M4 are identical with = ·The other transistor parameters are: indox-: 0.1 m1A/V2,VTN-0.5 V, γ-0 (body effect coefficient) and λ 0 (channel length modulation...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
short answer please
Design the circuit in Fig. to establish a drain voltage of 0.1 V. Let V=1V and K (WIL) = 1 mA/V? Vpp = +5V 16 Ro Vo - 01V 4.2 kohm 12.4 Kohm 2.2 kohm 2.4 Kohm
10 V 10 V R1 Uo R2 Fig.1 CS Amplifier (2) 12 pts] Consider the circuit for a CS amplifier shown in Fig.1 above. This time around, let λ-0.05 V-1 and kn-0.1 mA/V". Also, VDD-10 V and RD-5 kf2. Given that the output resistance of the amplifier (seen looking to the left of the output coupling capacitor) should be no less than 80% of RD, what is the maximun value of gm that can be achieved? Compute the associated values...
5. The NMOS and PMOS transistors in the below circuit are matched with kn’(Wn/Ln)=kp'(Wp/Lp)=1 mA/V2 and Vin=-Vt=1V. (20 pts) +5 V a) Which MOSFET is cut-off, NMOS (QN) or PMOS (QP) for VF-5V? Why (5 pts) Qp -5 Vo Ipp Vo VION ON -5 V b) When VF-5V, in which mode, saturation or triode, the circuit operate? Explain why? (5 pts) c) Find the drain current ipy and ipp and the voltage vo for VF-5V (10 pts)
6.108 (d)
Section 6.5: Discrete-Circuit Amplifiers 6.107 Calculate overall voltage gain G, of a 3 mA/V, ro= = 10 MS2. The amplifier is the common-source amplifier for which g 100 k2, RD 10 k2, and RG fed from a signal source with a Thevenin resistance of l M2, and the amplifier output is coupled of 20 k2 to a load resistance SIM 6.108 The NMOS transistor in the CS amplifier shown in Fig. P6.108 has V, = 0.7 V and...
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