Q3) Design the circuit of that is, determine the values of RD and RS so that...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
1 pts Design the circuit below to obtain a de voltage of +0.1 V at each of the drains of Q1 and Q2 when vci vG2 0 V. Operate all transistors at Vov 0.31 V and assume that for the process technology in which the circuit is fabricated, Vin-04 V and Cor-400 μA/V2. Neglect channel-length modulation. Determine the W ratio of Qs Voo = +0.9 V RD Ro +0.9 V 2 0.1 mA 0.4 mA -5,--0.9 V
Solve for VGS, Ip, and Vds for this NMOS transistor circuit. Vpp = +6.0V Rp = 4.9 kN2 RG1 = 2 M12 Rs = 2.0 ks2 RG2= 1 M 2 RD kn = 10.0 mA/V2 RG1 Vi= 1.0 V RG2 O Vss = -6.0V
Problem#1 Consider the circuit. The circuit parameters are Vpp = 3.3 V, RD = 8 k1, R, = 240 k12, R2 = 60 k22, and Rs = 2 k12. The transistor parameters are Vrn = 0.4 V, k', = 100 MA/V?, W/L = 80, and 1= 0.02 V!. (a) Determine the quiescent values Ipo and Vpsp. Ans: 0.27 mA; 1.14 V. (b) Find the small-signal parameters g.m and ro. Ans: 2.078 mA/V; 185 62. (e) Determine the small-signal voltage gain...
The circuit shown has the following circuit values: Rp = 2 kn, Rs = 1622. RG1 = 20 MO, Rs2 = 10 MQ and Vop = 18 V. The NMOS parameters are Vzn = 0.7 V and k.(W/L) = 0.4 mA/V2. Determine the value of Vos- Ovos = 12.63 v Ovos = 13.03 v Vos = 10.32 V Ovos = 11.77 v
SIM D 7.98 Design the circuit in Fig. P7.98 so that the transistor operates in saturation with V, biased 1 V from the edge of the triode region, with 1, = 1 mA and V, = 3 V, for each of the following two devices (use a 10-mA current in the voltage divider): (a) V=1 V and k WIL = 0.5 mA/V2 (b) V=2 V and k WIL = 1.25 mA/V2 For each case, specify the values of V, V,...
VOD Ro 1. [Design Problem (1)] N-channel MOSFET (NMOS) operating in "Saturation" region. a. Consider a circuit as shown in Fig 1. b. You will need to design the circuit such that Ip = 1 (mA), VG = 0 [V], and Vp = 5 [V]. (determine values for R1, R2, Rp, and Rs) 1 W ID = 5 unCox (Vgs - Vrh)2 = K (Vgs - VTH)2 c. Use Vpp = 15 [V], Vs = -15 [V], and 2N7000 for...
V.+w Operation in the triode reglon Condition v. e Wov 20 Vos uov os os-V (2) p V, so onl+Pala Characteristics Same relationships as for NMOS trasistos tCharacteristics: a CuGs- V,) ®os- } ip.C Replace .and NA with p,,and Nprespectively. V.V V, and yare negative. 2 wov ps For vos 2( -V) e Conditions for operation in the triode region ip lvi Q1. (10 points) For the following configuration of the given figure below, with the following parameters: VDD= +10...
For the n-channel E-MOSFET transistor in the circuit, the parameters are VT N = 0.4 V, Kn = 120μA/V2. Determine VGS, ID, and VDS. Sketch the DC and AC load lines and plot the Q-point. Assume AC input is connected to the gate and output is connected to the drain. +5 V S RD= 1.2 kΩ = 14 kΩ S R) = 6 ΚΩ: Rs= 0.5 ΚΩ –5 V
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...