Question

SIM D 7.98 Design the circuit in Fig. P7.98 so that the transistor operates in saturation with V, biased 1 V from the edge of the triode region, with 1, = 1 mA and V, = 3 V, for each of the following two devices (use a 10-mA current in the voltage divider): (a) V=1 V and k WIL = 0.5 mA/V2 (b) V=2 V and k WIL = 1.25 mA/V2 For each case, specify the values of V, V, Vs, R., R.RE, and RD +10 V 0 Figure P7.98

Answer 1

Ans. the transistor operates in saturation with no biased v from the circuits as shown in fig. Atlov from the for p-chane MOSFET to be in edge g saturation Nos ='YGs - Vt-1 since and InIMA Vo 3V kr los 3K 18103 10 R,+RL 10x106 2 IMR

vol alv kom t = 0.5malua 1o - kø 7 C vans +vb) – 1103 : + 40-6% to? Mas +1)+ > Was =-31 vosa vas -ve-o. Vsa vo - Vos 2-3+1-) 19 = ({-}-{. 2-3v Vor a vytvas = 30 20 VaRevo Rss to the someone 0.00 = 4ks ; 4KS = 3 2013 R2 20.3m. and R, - 1mm -0.3M_2 20.7 ML

Nel 22 kpW = 1.25 mAlwa ID = + kp' h (varstve)? . 1X103 +1.25 +10 3 (vastag? (or) -0- 74 VGS -3.26v -0.74V y not aceptable since Ivasialul There fove was 2-3.260 2-3-26 +2-1 2-9-96 v ปก 5 : -9 26 /