Homework Answers
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V,...
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V, VB= 2.4 V, and RB= 85k a) The graphon the last page shows the characteristics for the transistor in the above circuit Construct the load line for th is transistor circuit and draw it into the IC vs. VCE graph. Briefly state how you determine the load line. b) Determine the base current, assuming that the transistor is made of silicon. c) Determine the...
please help me solve the following problem Emitter biased NPN transistor homework Problem 1) Given Vcc-20V...
please help me solve the following problem
Emitter biased NPN transistor homework Problem 1) Given Vcc-20V Draw the circuit to the right R,-1 ΜΩ Rc 2.2ΚΩ RE-22ΚΩ β-|00 unless otherwise noted. Using the approximation for a transistor, solve for: 2) Ic- 4) VBE 5) ,VE= 8) Draw the load line on and plot the Q point for the given B, provide scaling and axis titles
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep ...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Question 1 (1 point) 18 V 5 kn 3 npn ckt1 15 HAQ An NPN transistor...
Question 1 (1 point) 18 V 5 kn 3 npn ckt1 15 HAQ An NPN transistor in active mode has the following characteristics: 1s=10-14 A and B = 150 Determine the values of VBE and VCE OVBE = 0.596 V VCE = 6.65 V = 0.7 V VCE = 6.95 V OVBE = 0.711 V VCE = 6.85 V OVBE = 0.653 V VCE = 6.75 V
and also Beta, B 2. Complete the circuit diagram for a NPN transistor amplifier. On the...
and also Beta, B
2. Complete the circuit diagram for a NPN transistor amplifier. On the diagram below draw the directions of the positive currents Is, Ic, and le. I8 - 10uA and Ic - 2mA. - V1 50 V R3 le (mA) Alpha, a
ASAP! Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in...
ASAP!
Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
1. An npn transistor is operating in the forward-active region with a base current of 3...
1. An npn transistor is operating in the forward-active region with a base current of 3 μA. It is found that IC = 225 μA for VCE = 5 V and IC = 265 μA for VCE = 10 V. What are the values of β and VA for this transistor
QUESTION 1 For normal operation of an npn transistor, the base must be O a. disconnected...
QUESTION 1 For normal operation of an npn transistor, the base must be O a. disconnected O b. negative with respect to the emitter O C positive with respect to the emitter O d. positive with respect to the collector QUESTION 2 The bias condition for a transistor to be used as a linear amplifier is called O a. forward-reverse b. forward-forward C. reverse-reverse d. collector bias
Consider the NPN transistor circuit below. Assume B=100 and Vee-on=0.7V. Calculate all three DC node voltages...
Consider the NPN transistor circuit below. Assume B=100 and Vee-on=0.7V. Calculate all three DC node voltages and all five DC branch currents using hand-calculations and then verify in PSPICE using Bias Point Detail Analysis. In PSPICE, use the QBREAKN3 transistor and edit its model with BF=100. Please turn in both your hand-calculation solution and your PSPICE solution including your properly labeled PSPICE schematic. Note that write your hand-calculations right next to the corresponding PSPICE values on your PSPICE printout. Vcc=+15Volts...
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V, VB= 2.4 V, and RB= 85k a) The graphon the last page shows the characteristics for the transistor in the above circuit Construct the load line for th is transistor circuit and draw it into the IC vs. VCE graph. Briefly state how you determine the load line. b) Determine the base current, assuming that the transistor is made of silicon. c) Determine the...
please help me solve the following problem
Emitter biased NPN transistor homework Problem 1) Given Vcc-20V Draw the circuit to the right R,-1 ΜΩ Rc 2.2ΚΩ RE-22ΚΩ β-|00 unless otherwise noted. Using the approximation for a transistor, solve for: 2) Ic- 4) VBE 5) ,VE= 8) Draw the load line on and plot the Q point for the given B, provide scaling and axis titles
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Question 1 (1 point) 18 V 5 kn 3 npn ckt1 15 HAQ An NPN transistor in active mode has the following characteristics: 1s=10-14 A and B = 150 Determine the values of VBE and VCE OVBE = 0.596 V VCE = 6.65 V = 0.7 V VCE = 6.95 V OVBE = 0.711 V VCE = 6.85 V OVBE = 0.653 V VCE = 6.75 V
and also Beta, B
2. Complete the circuit diagram for a NPN transistor amplifier. On the diagram below draw the directions of the positive currents Is, Ic, and le. I8 - 10uA and Ic - 2mA. - V1 50 V R3 le (mA) Alpha, a
ASAP!
Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
QUESTION 1 For normal operation of an npn transistor, the base must be O a. disconnected O b. negative with respect to the emitter O C positive with respect to the emitter O d. positive with respect to the collector QUESTION 2 The bias condition for a transistor to be used as a linear amplifier is called O a. forward-reverse b. forward-forward C. reverse-reverse d. collector bias
Consider the NPN transistor circuit below. Assume B=100 and Vee-on=0.7V. Calculate all three DC node voltages and all five DC branch currents using hand-calculations and then verify in PSPICE using Bias Point Detail Analysis. In PSPICE, use the QBREAKN3 transistor and edit its model with BF=100. Please turn in both your hand-calculation solution and your PSPICE solution including your properly labeled PSPICE schematic. Note that write your hand-calculations right next to the corresponding PSPICE values on your PSPICE printout. Vcc=+15Volts...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
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