Homework Answers
2)
The bias condition for a transistor to be used as a linear amplifier is called as forward-reverse
so, the correct answer is (a).
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QUESTION 1 For normal operation of an npn transistor, the base must be O a. disconnected...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
Student Assessment 1. The complementary PNP/NPN emitter follower circuit is intended as a: a small signal...
Student Assessment 1. The complementary PNP/NPN emitter follower circuit is intended as a: a small signal voltage amplifier 6 high frequency amplifier. C high output impedance amplifier. d current/power amplifier 2. If a complementary PNP/NPN output pair is driven with dual polarity power () supplies then the input and output terminals will be at: a half of the positive supply voltage 6 0V (ground). C half of the negative supply voltage. a +0.6V. The Transfer Characteristic of a complementary PNP/NPN...
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3...
Problem 2. A silicon NPN bipolar transistor has the following specifications: Emitter: N+: ND =1018 cm-3 , base: p-type, NA=1015 cm-3, collector: N-type, ND=5x1015 cm-3 . 1. Draw the energy band diagram of the transistor at thermal equilibrium, 2. If the transistor is biased at Normal Active Mode, emitter-base junction forward biased with 1 V, and collector-base junction is reverse biased with 4V, draw the energy band diagram.
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c....
QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c. minimum O d. maximum QUESTION 4 When operated in cutoff and saturation, the transistor acts like a a linear amplifier b. switch O c. variable capacitor Od variable resistor If a sinusoidal voltage is applied to the base of a biased on transistor and the resulting sinusoidal collector-to-emitter voltage is clipped near zero volts, the transistor is to Clipped ICO VE Clipped OVO a....
This problem pertains to silicon npn transistors biased in the normal active mode of operation at...
This problem pertains to silicon npn transistors biased in the normal active mode of operation at T- 300 K. a) The emitter is doped 25 times more heavily than the base. The minority carrier mobility in the emitter is one-fourth that in the base. The base width is 15% of the minority camer diffusion length in the base. The minority carrier lifetimes in the base and emitter are identical. Calculate the base transport factor, emitter injection efficiency, ?, and ?...
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward acti...
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward active bias is given in the following questions. On top of the figure, sketch the corresponding new minority carrier concentration when the given condition is changed. (To make the question simple, you may assume the depletion width remains unchanged in all questions. But you have to indicate the new equilibrium minority concentration if they are affected.) 6. a) collector doping is increased by...
QUESTION 8 In a common-collector amplifier, the coupling capacitors reactance at the frequency of operation must...
QUESTION 8 In a common-collector amplifier, the coupling capacitors reactance at the frequency of operation must be a. equal to the value of Rc b. very high O c. very low od independent of frequency QUESTION 9 An emitter follower (common-collector amplifier) has a voltage gain that is O a much less than one Ob.approximately equals to one O c. greater than one d. typically 100 QUESTION 10 In a common-emitter amplifier, the capacitor from emitter to ground is called...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
Student Assessment 1. The complementary PNP/NPN emitter follower circuit is intended as a: a small signal voltage amplifier 6 high frequency amplifier. C high output impedance amplifier. d current/power amplifier 2. If a complementary PNP/NPN output pair is driven with dual polarity power () supplies then the input and output terminals will be at: a half of the positive supply voltage 6 0V (ground). C half of the negative supply voltage. a +0.6V. The Transfer Characteristic of a complementary PNP/NPN...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c. minimum O d. maximum QUESTION 4 When operated in cutoff and saturation, the transistor acts like a a linear amplifier b. switch O c. variable capacitor Od variable resistor If a sinusoidal voltage is applied to the base of a biased on transistor and the resulting sinusoidal collector-to-emitter voltage is clipped near zero volts, the transistor is to Clipped ICO VE Clipped OVO a....
This problem pertains to silicon npn transistors biased in the normal active mode of operation at T- 300 K. a) The emitter is doped 25 times more heavily than the base. The minority carrier mobility in the emitter is one-fourth that in the base. The base width is 15% of the minority camer diffusion length in the base. The minority carrier lifetimes in the base and emitter are identical. Calculate the base transport factor, emitter injection efficiency, ?, and ?...
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward active bias is given in the following questions. On top of the figure, sketch the corresponding new minority carrier concentration when the given condition is changed. (To make the question simple, you may assume the depletion width remains unchanged in all questions. But you have to indicate the new equilibrium minority concentration if they are affected.) 6. a) collector doping is increased by...
QUESTION 8 In a common-collector amplifier, the coupling capacitors reactance at the frequency of operation must be a. equal to the value of Rc b. very high O c. very low od independent of frequency QUESTION 9 An emitter follower (common-collector amplifier) has a voltage gain that is O a much less than one Ob.approximately equals to one O c. greater than one d. typically 100 QUESTION 10 In a common-emitter amplifier, the capacitor from emitter to ground is called...
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