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QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c....
Question 20 If the output of a transistor amplifier is 50 Vrms and the input is...
Question 20 If the output of a transistor amplifier is 50 Vrms and the input is 100 mVrms, the voltage gain is 5 500 50 100 Question 21 IV CC is increased in transistor with separate biasing source V BB. the collector current will increase decrease o not change none of these correct A Moving to the next question prevents changes to this answer. Question 22 When operated between cutoff and saturation, the transistor acts like Amplifier Variable resistor Variable...
Question 38 "? Under which condition, collector emitter voltage 'V CE is equals to supply collector...
Question 38 "? Under which condition, collector emitter voltage 'V CE is equals to supply collector voltage V saturation region breakdown region cutoff region linear region
Can I get help with part g through part r, please? Given the following Common-Emitter Amplifier...
Can I get help with part g through part r, please?
Given the following Common-Emitter Amplifier with Voltage-Divider Bias: The transistor is a Silicon device with B160 (Beta 160) and transistor r.= 30 kn: 20 V 34.7k LAL = Vou 35.10 31.1k LRE $3900 03 - Find the following quantities in parts a through where means Quiescent DC): a) Thevenin Voltage and Thevenin Resistance Re b) Base Current la Collector Current le d) Emitter Current le e) Transistor Collector-Emitter Quiescent...
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector...
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
Solve for the following using: 1) exact method 2) approximate method compare if approximate method is...
Solve for the following using:
1) exact method
2) approximate method
compare if approximate method is sufficient for analysis. which
solution is better?
Example For the voltage divider bias circuit, RB1-13K2, R 2.2k2 , Rc-68K(2. RE-1.5K(2.Vcc-15 V. VCEsat -0.3 V and β of the Si transistor is 80. Determine the following O" (a) DC base voltage and DC emitter voltage of the transistor amplifier (b) DC operating voltages and currents of the transistor amplifier (lBo, Ico, IEo and VcEO) (c)...
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant...
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant voltage model with VE 0.7V if the base emitter junction is forward biased. A variable DC source is attached to input VIN. Find the operating mode (cutoff, active, or saturation), the collector node voltage VC, and the collector current IC for each of the following cases: (a) VIN 0V (b) VIN = 1.2V (c) VIN 6.0v (d) VIN 12.0V 1 K IC VC 10K...
A class-C amplifier has a base bias voltage of -5V and Vcc = 30V. It is...
A class-C amplifier has a base bias voltage of -5V and Vcc = 30V. It is determined that a peak input voltage of 9.8V at 1MHz is required to drive the transistor to its saturation current of 1.8A. 1. Find the conduction Angle 2. Find the output power at 1MHz 3. Find the efficiency 4. If an LC tank having C = 200 PF is connected in the collector circuit. Find the inductance necessary to tune the amplifier.
Student Assessment 1. The complementary PNP/NPN emitter follower circuit is intended as a: a small signal...
Student Assessment 1. The complementary PNP/NPN emitter follower circuit is intended as a: a small signal voltage amplifier 6 high frequency amplifier. C high output impedance amplifier. d current/power amplifier 2. If a complementary PNP/NPN output pair is driven with dual polarity power () supplies then the input and output terminals will be at: a half of the positive supply voltage 6 0V (ground). C half of the negative supply voltage. a +0.6V. The Transfer Characteristic of a complementary PNP/NPN...
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows...
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows a series regulator connected to the output of an unregulated power supply. The transistor has B =50, and a 6 volt Zener diode is used. When the load current, Il, is 1 amp the de input voltage from the unregulated supply, Vin, is 11 volt, VBE = 1 volt and the Zener diode current, Iz, is 20 mA. For these conditions, calculate Iz (i)...
HELP with finding 8 and 9 2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (k...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
Question 20 If the output of a transistor amplifier is 50 Vrms and the input is 100 mVrms, the voltage gain is 5 500 50 100 Question 21 IV CC is increased in transistor with separate biasing source V BB. the collector current will increase decrease o not change none of these correct A Moving to the next question prevents changes to this answer. Question 22 When operated between cutoff and saturation, the transistor acts like Amplifier Variable resistor Variable...
Question 38 "? Under which condition, collector emitter voltage 'V CE is equals to supply collector voltage V saturation region breakdown region cutoff region linear region
Can I get help with part g through part r, please?
Given the following Common-Emitter Amplifier with Voltage-Divider Bias: The transistor is a Silicon device with B160 (Beta 160) and transistor r.= 30 kn: 20 V 34.7k LAL = Vou 35.10 31.1k LRE $3900 03 - Find the following quantities in parts a through where means Quiescent DC): a) Thevenin Voltage and Thevenin Resistance Re b) Base Current la Collector Current le d) Emitter Current le e) Transistor Collector-Emitter Quiescent...
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
Solve for the following using:
1) exact method
2) approximate method
compare if approximate method is sufficient for analysis. which
solution is better?
Example For the voltage divider bias circuit, RB1-13K2, R 2.2k2 , Rc-68K(2. RE-1.5K(2.Vcc-15 V. VCEsat -0.3 V and β of the Si transistor is 80. Determine the following O" (a) DC base voltage and DC emitter voltage of the transistor amplifier (b) DC operating voltages and currents of the transistor amplifier (lBo, Ico, IEo and VcEO) (c)...
The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant voltage model with VE 0.7V if the base emitter junction is forward biased. A variable DC source is attached to input VIN. Find the operating mode (cutoff, active, or saturation), the collector node voltage VC, and the collector current IC for each of the following cases: (a) VIN 0V (b) VIN = 1.2V (c) VIN 6.0v (d) VIN 12.0V 1 K IC VC 10K...
Student Assessment 1. The complementary PNP/NPN emitter follower circuit is intended as a: a small signal voltage amplifier 6 high frequency amplifier. C high output impedance amplifier. d current/power amplifier 2. If a complementary PNP/NPN output pair is driven with dual polarity power () supplies then the input and output terminals will be at: a half of the positive supply voltage 6 0V (ground). C half of the negative supply voltage. a +0.6V. The Transfer Characteristic of a complementary PNP/NPN...
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows a series regulator connected to the output of an unregulated power supply. The transistor has B =50, and a 6 volt Zener diode is used. When the load current, Il, is 1 amp the de input voltage from the unregulated supply, Vin, is 11 volt, VBE = 1 volt and the Zener diode current, Iz, is 20 mA. For these conditions, calculate Iz (i)...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
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