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The transistor in the circuit below has ?-100 and Vci(sat) OV. You may use the constant...
draw a base biased circuit and refered to question 5 and complete table. please draw the fixed bias diagram circuit and follow throught step on the next question. Figure 1. Bipolar junction tran...
draw a base biased circuit and refered to question 5 and
complete table.
please draw the fixed bias diagram circuit and follow throught step
on the next question.
Figure 1. Bipolar junction transistor under base bias/fixed bias 5. In the circuit drawn in Figure 1, label the components with the following values: Base voltage, Collector voltage10V Base resistance Collector resistance Base - emitter voltage 2.7 k2 0.7 V 160 6. Connect the circuit drawn in Figure 1 on the breadboard....
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and...
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
(2+5 pts) Consider the bias circuit below for a transistor amplifier designed for active region operation....
(2+5 pts) Consider the bias circuit below for a transistor amplifier designed for active region operation. The desired bias point parameters are lg = 3 mA and Ic = 2.97 mA. Assume VBE- 0.7 V and VT=25 mV. Determine the emitter voltage VE . Choose the best answer. VCC +15 V Vc RBB VB LVE V BB RE 500 S2 1.49 V O2v 01.5V O 0.7V
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteris...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
TCO 2) For the circuit below, if Vcc is 28 volts and Rb is 4.7k ohms,...
TCO 2) For the circuit below, if Vcc is 28 volts and Rb is 4.7k ohms, find the base and collector voltages and currents for an input of OV and 5V. Beta 300, the motor resistance is 400 ohms. AG1 NI MOTOR SERVO Vin N Yout Rb 1a: When Vin OV, find: lb = Ic = Vbase Vcol 1b: when Vin 5V, find: IC Vbase HTML Editor Question 6 7 pts TCO 1) Find the following for an input of...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be=...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
Problem 1: BJT DC Circuits Analyze the four circuits below, first analytically and then verify us...
Problem 1: BJT DC Circuits Analyze the four circuits below, first analytically and then verify using simulations in PSPICE/Multisim. You have to solve each circuit that is, find the status of the BUT (active, saturation or cutoff mode) and then find all the node voltages and all the currents. Whenever you solve manually always make the following assumptions: for npn BIT VE-0.7V (if the BE junction is forward biased) for pap BIT VEB-0.7V (if the BE junction is forward biased)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
Use Exact Analysis Use 4 decimal places, no commas. a. VCC = 15V b. R1 =...
Use Exact Analysis Use 4 decimal places, no commas. a. VCC = 15V b. R1 = 55 kΩ c. R2 = 15 kΩ d. RC = 2.5 kΩ e. RE = 1.5 kΩ f. RS = 15 Ω g. RL = 500 Ω h. βDC = 50 i. βac = 100 Single-stage, voltage-divider biased, common-emitter with **C1 and C2 are coupling capacitors. C3 is bypass capacitor Given: A. VB = [a] V ; B. VE = [b] V ; C....
Could someone please help me on how I should be configuring the circuit in Figure 4(a)...
Could someone please help me on how I should be configuring the
circuit in Figure 4(a) in Multisim? Basically not understanding
question #1 in the Procedure. Cannot keep Vrb the same value while
adjusting Vcc. Then when trying to adjust Vbb to hold Vrb, Ib
changes.
Any help is appreciated!
Discrete Devices Section LAB 4 BJT CHARACTERISTICS AND BIASING Objective: The objective of this laboratory is to examine the operation of a bipolar junction transistor and plot its output characteristics...
draw a base biased circuit and refered to question 5 and
complete table.
please draw the fixed bias diagram circuit and follow throught step
on the next question.
Figure 1. Bipolar junction transistor under base bias/fixed bias 5. In the circuit drawn in Figure 1, label the components with the following values: Base voltage, Collector voltage10V Base resistance Collector resistance Base - emitter voltage 2.7 k2 0.7 V 160 6. Connect the circuit drawn in Figure 1 on the breadboard....
A Si p-n-p transistor has impurity concentrations of6*1018, 7 1015 and 9*1017 cm3 in the emitter, base and collector regions correspondingly. The corresponding carrier lifetimes are 10 10-7, and 106 s. The device cross-section area A-0.02 mm2, the emitter base junction is forward biased to 0.7V. Use diffusion coefficients DE-3cm2/s, DB-15 cm2/s, Dc-5cm%, and base with w=0.65 (a) Calculate emitter current using iEp.n-qADpPn p exp( )1 (b) Calculate current gain: (c) Estimate the device switching time (RC) assuming that resistance...
(2+5 pts) Consider the bias circuit below for a transistor amplifier designed for active region operation. The desired bias point parameters are lg = 3 mA and Ic = 2.97 mA. Assume VBE- 0.7 V and VT=25 mV. Determine the emitter voltage VE . Choose the best answer. VCC +15 V Vc RBB VB LVE V BB RE 500 S2 1.49 V O2v 01.5V O 0.7V
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
TCO 2) For the circuit below, if Vcc is 28 volts and Rb is 4.7k ohms, find the base and collector voltages and currents for an input of OV and 5V. Beta 300, the motor resistance is 400 ohms. AG1 NI MOTOR SERVO Vin N Yout Rb 1a: When Vin OV, find: lb = Ic = Vbase Vcol 1b: when Vin 5V, find: IC Vbase HTML Editor Question 6 7 pts TCO 1) Find the following for an input of...
Download the datasheet for 2N3904 and find the value of Bp. (Hint: Use average value) Be= Voc +10 V RB We are going to consider the common emitter configuration circuit shown in the figure to test a 2N3904 npn Bipolar Junction Transistor (BJT) under DC bias conditions. Your circuit should place a fixed collector resistor, Rc, in the circuit to prevent the collector current, Ic, from exceeding 40 mA (for this, you know that the minimum value of is zero)....
Problem 1: BJT DC Circuits Analyze the four circuits below, first analytically and then verify using simulations in PSPICE/Multisim. You have to solve each circuit that is, find the status of the BUT (active, saturation or cutoff mode) and then find all the node voltages and all the currents. Whenever you solve manually always make the following assumptions: for npn BIT VE-0.7V (if the BE junction is forward biased) for pap BIT VEB-0.7V (if the BE junction is forward biased)...
4. Lab VIII: Experiment VII The Bipolar Junction Transistor (BJT) Characteristics The bipolar junction transistor (BJT) is a three-terminal solid state device widely used as an amplifier (or switching) device. It consists of two n-type materials sandwiched by p-type material (npn) or two p-type and n-type. The terminals (sections) are known as emitter E, base B and collector C. Two currents and two voltages uniquely describe the behavior of the device. The third current/voltage can be determined through KCL/KVL. See...
Could someone please help me on how I should be configuring the
circuit in Figure 4(a) in Multisim? Basically not understanding
question #1 in the Procedure. Cannot keep Vrb the same value while
adjusting Vcc. Then when trying to adjust Vbb to hold Vrb, Ib
changes.
Any help is appreciated!
Discrete Devices Section LAB 4 BJT CHARACTERISTICS AND BIASING Objective: The objective of this laboratory is to examine the operation of a bipolar junction transistor and plot its output characteristics...
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