Question 38 "? Under which condition, collector emitter voltage 'V CE is equals to supply collector...
QUESTION 3 In saturation, collector-emitter voltage is O a.5 V b.equal to collector-bias voltage O c. minimum O d. maximum QUESTION 4 When operated in cutoff and saturation, the transistor acts like a a linear amplifier b. switch O c. variable capacitor Od variable resistor If a sinusoidal voltage is applied to the base of a biased on transistor and the resulting sinusoidal collector-to-emitter voltage is clipped near zero volts, the transistor is to Clipped ICO VE Clipped OVO a....
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
uestion 8 10 pts The IGBT used in a forward converter is rated 350-V and 20-A and its saturation collector-emitter voltage VcE is specified as 0.43-V What is the conduction loss when this element operates at 0.48 duty cycle?
uestion 8 10 pts The IGBT used in a forward converter is rated 350-V and 20-A and its saturation collector-emitter voltage VcE is specified as 0.43-V What is the conduction loss when this element operates at 0.48 duty cycle?
The common emitter circuit
Which region of the CE circuit transfer characteristic can be used for voltage amplification? Why? two values 2. Calculate ? at u0-2.5 V. Also, calculate ?0red low/ IB, at Vo-0.1 V. Compare the 3. As the operating point of the BJT moves into saturation, which current begins to 4. Calculate the voltage gains Gr-Avo /??, and Ar-???/AUBE when Vo changes from saturate l E, 1B or lc? 3.5 to 2.5 V. Why is Av usually less...
1) Two pnp BJTs are identical except that the emitter and collector region doping are interchanged, as illustrated below. 1017 1017 101s 10 1014 04 E B C ??? Transistor A Transistor B a) Which transistor is expected to have the greater emitter efficiency? Explain. b) Which transistor will exhibit the greater sensitivity to base width modulation under active mode biasing? Explain. If limited by avalanche breakdown of the C-B junction, which transistor will exhibit the larger VcB0? Explairn. c)
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
2. For the following circuit: emitter follower onguration i.e. CE, or CC, or CB, or CS or, or CG, or CD, or b. Calculate ly, Lc. IB, VEs and VI. c. Based or none of the above, and the correct answer is on calculations in part (b). the transistor is in active or saturation of or triode region, explain supporting with above ca Calculate the input resistance Rin looking into base, and output resistance n looking into emitter e. Calculate...
x=4
Question 3: The parameters of both bjt are as follows: base emitter turn on voltage is VBE,ON = 0.7 V, early voltage VA = 0, ac current gain B = 99. Small signal ac voltage source viis applied to the base of Q1 through a large capacitor. The resistors on the left branch are 63 X and 37xX2 (63 times X and 37 times X, note that these are not k2!!!). The remaining resistors are 4 k 2, 3...
Question 3. Unregulated supply Rz IL Vin IR Ib (a) The circuit on the right shows a series regulator connected to the output of an unregulated power supply. The transistor has B =50, and a 6 volt Zener diode is used. When the load current, Il, is 1 amp the de input voltage from the unregulated supply, Vin, is 11 volt, VBE = 1 volt and the Zener diode current, Iz, is 20 mA. For these conditions, calculate Iz (i)...
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward active bias is given in the following questions. On top of the figure, sketch the corresponding new minority carrier concentration when the given condition is changed. (To make the question simple, you may assume the depletion width remains unchanged in all questions. But you have to indicate the new equilibrium minority concentration if they are affected.) 6. a) collector doping is increased by...