1) Two pnp BJTs are identical except that the emitter and collector region doping are interchanged,...
HELP with finding 8 and 9
2. IC temperature sensor The emitter-base voltage VEB of a PNP bipolar junction transistor (BJT) with its base and collector shorted (figure 1(a)) can be expressed by VEB (kT/q) In(Ic/Is), in which Is is the saturation current of the emitter-base junction (a) (3 pts) Choose any statement below that correctly describe the effect of temperature on the property of the BIT under a constant 1c as shown in figure 1(a).18_.(one or more than one...
Emitter Collector PIN 5. Figure illustrates the minority carrier concentrations along a BJT. We are told that V=> and VBO according to polarity shown in the figure. State the type of the transistor and the mode in which it is operating a. PNP, active mode b. NPN, saturation mode c. NPN, reverse active mode d. PNP, cut-off mode
Emitter Collector DIN 5. Figure illustrates the minority carrier concentrations along a BJT. We are told that VÆ> and VBO according to polarity shown in the figure. State the type of the transistor and the mode in which it is operating a. PNP, active mode b. NPN, saturation mode c. NPN, reverse active mode d. PNP, cut-off mode
Emitter Base Collector 5. Figure illustrates the minority carrier concentrations along a BJT. We are told that VEB>0 and VcB>0 according to polarity shown in the figure. State the type of the transistor and the mode in which it is operating a. PNP, active mode b. NPN, saturation mode c. NPN, reverse active mode d. PNP, cut-off mode +V
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
A uniformly doped silicon pnp transistor with base width of 2um is biased in forward active mode (with BC junction reverse biased). The doping concentrations are NE-1018cm NB-5x1016cm3, and Nc-1015cm3. Assume DB-25 cm2/s, TB-10-s and LB 16um (a) Calculate the values of no, рво, and nco. (b) For VEB 0.65V, determine the respective minority carrier concentration at the edge of the depletion layer, pa(0) and ne(0) (c) Sketch the minority carrier concentration through the device and label each curve (d)...