1. An npn transistor is operating in the forward-active region with a base current of 3...
1. An npn transistor is operating in the forward-active region with a base current of 3 μA. It is found that IC = 225 μA for VCE = 5 V and IC = 265 μA for VCE = 10 V.
- What are the values of β and VA for this transistor
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1. An npn transistor is operating in the forward-active
region with a base current of 3...
An npn transistor with IS = 5 × 10−16 A, β= 100, and VA = 65...
An npn transistor with IS = 5 × 10−16 A, β= 100, and VA = 65 V is biased in the forward-active region with VBE = 0.72 V and VCE = 10 V. What is the collector current IC? What would be the collector current IC if VA = ∞? What is the ratio of the two answers in parts (b) and (c)?
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region wi...
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep ...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B =...
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B = 100 is connected as follows: The emitter is grounded, the base is fed with a constant-current source supplying a dc current of 10 u A, and the collector is connected to a 5-V dc supply via a resistance Rc of 3 k12. Assuming that the transistor is operating in the active mode, find VBE and Vce. Use these values to verify active-mode operation. Replace...
Question 1 (1 point) 18 V 5 kn 3 npn ckt1 15 HAQ An NPN transistor...
Question 1 (1 point) 18 V 5 kn 3 npn ckt1 15 HAQ An NPN transistor in active mode has the following characteristics: 1s=10-14 A and B = 150 Determine the values of VBE and VCE OVBE = 0.596 V VCE = 6.65 V = 0.7 V VCE = 6.95 V OVBE = 0.711 V VCE = 6.85 V OVBE = 0.653 V VCE = 6.75 V
draw a (simplified) schematic !! An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this mode...
draw a (simplified) schematic !!
An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this model! CE
An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this model! CE
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V,...
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V, VB= 2.4 V, and RB= 85k a) The graphon the last page shows the characteristics for the transistor in the above circuit Construct the load line for th is transistor circuit and draw it into the IC vs. VCE graph. Briefly state how you determine the load line. b) Determine the base current, assuming that the transistor is made of silicon. c) Determine the...
T=300K, Ni=1E10cm-3 1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%]...
T=300K, Ni=1E10cm-3
1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%] Assuming VBE 0.8 V, calculate the base neutral region width (WB), and confirm whether WB< Ln. (Hint: consider the depletion widths at the base/emitter and base/collector junctions.) (b) [3090] Assuming VBE-0.8 V. calculate lc. IB and IE. Note: use the appended graphs for Ln and Dn BE 50 ?m 50 ?m Emitter Il Base 0.4 um Collector Active base region Nd(Emitter) 1 x 1020...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
3. A silicon npn bipolar transistor is uniformly doped and biased in the forward active region with the base-collector junction reverse biased by 2.5 V. The metallurgical base width is 1.5 μm. The emitter, base collector doping concentrations are 5 × 1017, 1016, 2 × 1015 cm-3 respectively. a. At T-300 K, calculate the base-emitter voltage at which the minority carrier electron concentration at x-0 is 20% of the majority carrier hole concentration. At this voltage calculate the minority carrier...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B = 100 is connected as follows: The emitter is grounded, the base is fed with a constant-current source supplying a dc current of 10 u A, and the collector is connected to a 5-V dc supply via a resistance Rc of 3 k12. Assuming that the transistor is operating in the active mode, find VBE and Vce. Use these values to verify active-mode operation. Replace...
Question 1 (1 point) 18 V 5 kn 3 npn ckt1 15 HAQ An NPN transistor in active mode has the following characteristics: 1s=10-14 A and B = 150 Determine the values of VBE and VCE OVBE = 0.596 V VCE = 6.65 V = 0.7 V VCE = 6.95 V OVBE = 0.711 V VCE = 6.85 V OVBE = 0.653 V VCE = 6.75 V
draw a (simplified) schematic !!
An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this model! CE
An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this model! CE
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V, VB= 2.4 V, and RB= 85k a) The graphon the last page shows the characteristics for the transistor in the above circuit Construct the load line for th is transistor circuit and draw it into the IC vs. VCE graph. Briefly state how you determine the load line. b) Determine the base current, assuming that the transistor is made of silicon. c) Determine the...
T=300K, Ni=1E10cm-3
1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%] Assuming VBE 0.8 V, calculate the base neutral region width (WB), and confirm whether WB< Ln. (Hint: consider the depletion widths at the base/emitter and base/collector junctions.) (b) [3090] Assuming VBE-0.8 V. calculate lc. IB and IE. Note: use the appended graphs for Ln and Dn BE 50 ?m 50 ?m Emitter Il Base 0.4 um Collector Active base region Nd(Emitter) 1 x 1020...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
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