An npn transistor with IS = 5 × 10−16 A, β= 100, and VA = 65 V is biased in the forward-active region with VBE = 0.72 V and VCE = 10 V.
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1. An npn transistor is operating in the forward-active region with a base current of 3 μA. It is found that IC = 225 μA for VCE = 5 V and IC = 265 μA for VCE = 10 V. What are the values of β and VA for this transistor
draw a (simplified) schematic !! An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this model! CE An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this model! CE
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B = 100 is connected as follows: The emitter is grounded, the base is fed with a constant-current source supplying a dc current of 10 u A, and the collector is connected to a 5-V dc supply via a resistance Rc of 3 k12. Assuming that the transistor is operating in the active mode, find VBE and Vce. Use these values to verify active-mode operation. Replace...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
An NPN bipolar junction transistor (BJT) is used to turn on and off a 30 Ohm load using an Arduino digital output pin as shown. Assuming the transistor is on, in the saturation region, determine the power delivered to the 30 Ohm load. The voltage drop across the collector-emitter junction of the transistor is 0.2 Volts. +5 v 1308 ARDUINO SV UNO mne гоо са Vce=0.2 v Saturation VBE = 0.7V in active & Saturation regions
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
Question 1 (1 point) 18 V 5 kn 3 npn ckt1 15 HAQ An NPN transistor in active mode has the following characteristics: 1s=10-14 A and B = 150 Determine the values of VBE and VCE OVBE = 0.596 V VCE = 6.65 V = 0.7 V VCE = 6.95 V OVBE = 0.711 V VCE = 6.85 V OVBE = 0.653 V VCE = 6.75 V
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
answer i-iv please The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...