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draw a (simplified) schematic !! An npn transistor having IS-10-15A and β = 100 is connected shown. Assuming the transistor is in active mode, find VBE and VCE. 10μΑ Draw a schematic for this mode...
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B =...
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B = 100 is connected as follows: The emitter is grounded, the base is fed with a constant-current source supplying a dc current of 10 u A, and the collector is connected to a 5-V dc supply via a resistance Rc of 3 k12. Assuming that the transistor is operating in the active mode, find VBE and Vce. Use these values to verify active-mode operation. Replace...
An npn transistor with IS = 5 × 10−16 A, β= 100, and VA = 65...
An npn transistor with IS = 5 × 10−16 A, β= 100, and VA = 65 V is biased in the forward-active region with VBE = 0.72 V and VCE = 10 V. What is the collector current IC? What would be the collector current IC if VA = ∞? What is the ratio of the two answers in parts (b) and (c)?
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep ...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
RE -3.3k2 Figure 5. Vbe-0.7V (active), Vce 0.2V (saturation), p-100 For the circuit shown in Figure...
RE -3.3k2 Figure 5. Vbe-0.7V (active), Vce 0.2V (saturation), p-100 For the circuit shown in Figure 5: a) If V oV DC, find the DC bias point for Q1? b) Draw the small signal equivalent circuit and evaluate the small signal AC voltage gain. c) Sketch le vs Vce and show the operating point for the transistor. d) How would you change the bias to obtain maximum signal swing?
An npn transistor is employed in a common-base amplifier. 4 p 100, VBE 0.7 V. +-5V 2Ks2 Vo 5ΚΩ 4.3KM -5V in It is known that the device is biased to have Ig of 1 mA. Determine the transconductance of...
An npn transistor is employed in a common-base amplifier. 4 p 100, VBE 0.7 V. +-5V 2Ks2 Vo 5ΚΩ 4.3KM -5V in It is known that the device is biased to have Ig of 1 mA. Determine the transconductance of the transistor. (10 points) (a) (b) Draw the small-signal equivalent circuit employing the T- model. (10 points)
An npn transistor is employed in a common-base amplifier. 4 p 100, VBE 0.7 V. +-5V 2Ks2 Vo 5ΚΩ 4.3KM -5V in It...
1. (10 pts) Find the voltage gain for the circuit shown below, assume β-200. Vbe-0.6 and...
1. (10 pts) Find the voltage gain for the circuit shown below, assume β-200. Vbe-0.6 and Vin(t)-1.2+0.2sin(2*pi*1k't) Rc 2k Rb V1 MW V2 40k 10 SINE(1.2.21k 0 0010) tran .01 2. Answer the following questions based on the circuit above. a. Is it possible to drive the amplifer in saturation by changing the values of B, Rb, and Rc, explain your answers. b. What ranges of Rc can be used on this amplifier without going on saturation mode? c. Can...
The 1 mA. V, ls -VE -15 15 V, in the following differential amplifier circuit, Vcc parameters are given as β, 100, VBE# 0.7 V, pr-25 mV, K.-100 V. transistor Rc-10 kΩ For: RE-150 Ω Rc Rc REE-200...
The 1 mA. V, ls -VE -15 15 V, in the following differential amplifier circuit, Vcc parameters are given as β, 100, VBE# 0.7 V, pr-25 mV, K.-100 V. transistor Rc-10 kΩ For: RE-150 Ω Rc Rc REE-200 kΩ a) What is the input differential resistance, Rid b) What is the overall voltage gain vV? You c) What is input common mode resistance, d) What is the worst case common mode gain that appear across the two input terminals? (4...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value o...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value of IEQ (b) Find the small-signal voltage gain Av Vo/vs (c) Determine the output resistance R, looking into output terminals Av= 0.5589 Ro-0.4688 Ω Ro-0.9118 Ω leQ- 23.76 mA Ra " 0.6538 Ω leo 39.52 mA A, 0.9938
For the circuit shown below,...
solve both 2.10 Find the transistor schematic for the CMOS logic circuit realized by the layout...
solve both
2.10 Find the transistor schematic for the CMOS logic circuit realized by the layout shown in Fig. P2.10. Give the widths of all transistors. AssumeL = 21, where A = 0.4 um. In tabular form, give the area and perimeter of each junction that is not connected to VDD or to ground. VDD Polysilicon 8A n well -p diffusion Active region Out 6/ n diffusion Metal Gnd A Fig. P2.10 D 17.33 The circuit of Fig. P17.33 consists...
ECE 3424 Student Name & ID: An npn transistor having 1s = 10-"A and B = 100 is connected as follows: The emitter is grounded, the base is fed with a constant-current source supplying a dc current of 10 u A, and the collector is connected to a 5-V dc supply via a resistance Rc of 3 k12. Assuming that the transistor is operating in the active mode, find VBE and Vce. Use these values to verify active-mode operation. Replace...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
RE -3.3k2 Figure 5. Vbe-0.7V (active), Vce 0.2V (saturation), p-100 For the circuit shown in Figure 5: a) If V oV DC, find the DC bias point for Q1? b) Draw the small signal equivalent circuit and evaluate the small signal AC voltage gain. c) Sketch le vs Vce and show the operating point for the transistor. d) How would you change the bias to obtain maximum signal swing?
An npn transistor is employed in a common-base amplifier. 4 p 100, VBE 0.7 V. +-5V 2Ks2 Vo 5ΚΩ 4.3KM -5V in It is known that the device is biased to have Ig of 1 mA. Determine the transconductance of the transistor. (10 points) (a) (b) Draw the small-signal equivalent circuit employing the T- model. (10 points)
An npn transistor is employed in a common-base amplifier. 4 p 100, VBE 0.7 V. +-5V 2Ks2 Vo 5ΚΩ 4.3KM -5V in It...
1. (10 pts) Find the voltage gain for the circuit shown below, assume β-200. Vbe-0.6 and Vin(t)-1.2+0.2sin(2*pi*1k't) Rc 2k Rb V1 MW V2 40k 10 SINE(1.2.21k 0 0010) tran .01 2. Answer the following questions based on the circuit above. a. Is it possible to drive the amplifer in saturation by changing the values of B, Rb, and Rc, explain your answers. b. What ranges of Rc can be used on this amplifier without going on saturation mode? c. Can...
The 1 mA. V, ls -VE -15 15 V, in the following differential amplifier circuit, Vcc parameters are given as β, 100, VBE# 0.7 V, pr-25 mV, K.-100 V. transistor Rc-10 kΩ For: RE-150 Ω Rc Rc REE-200 kΩ a) What is the input differential resistance, Rid b) What is the overall voltage gain vV? You c) What is input common mode resistance, d) What is the worst case common mode gain that appear across the two input terminals? (4...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value of IEQ (b) Find the small-signal voltage gain Av Vo/vs (c) Determine the output resistance R, looking into output terminals Av= 0.5589 Ro-0.4688 Ω Ro-0.9118 Ω leQ- 23.76 mA Ra " 0.6538 Ω leo 39.52 mA A, 0.9938
For the circuit shown below,...
solve both
2.10 Find the transistor schematic for the CMOS logic circuit realized by the layout shown in Fig. P2.10. Give the widths of all transistors. AssumeL = 21, where A = 0.4 um. In tabular form, give the area and perimeter of each junction that is not connected to VDD or to ground. VDD Polysilicon 8A n well -p diffusion Active region Out 6/ n diffusion Metal Gnd A Fig. P2.10 D 17.33 The circuit of Fig. P17.33 consists...
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