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le ltlys Eiponemally, while the other is not strongly absorbed and maintains an about constant pair crcation rate over the length of the semiconductor,L Find the steady-state excess hole concentration Ap, (x), 0sx S L. HINT: The DE is linear so superposition holds. [100] A doped piece of Si (at 300K) has N, 10cm test, [50] Using the Data at the end of the a. calculate the electron concentration, n, the hole concentration, p, and (E. E,) b. We now implant the silicon with N 3x10cm. Find the new electron and hole concentrations as well as (E -E)


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