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II. (50 pts.) Find the frequency of oscillation of the circuit shown below. Find the minimum...
l (33 PTS.) A MOSFET two-stage amplifier is shown below a) Determine gm for both MOSFETS...
l (33 PTS.) A MOSFET two-stage amplifier is shown below a) Determine gm for both MOSFETS )ndicate the configuration (topology) of each amplifier stage raw the small-signal equivalent circuit of the entire amplifier (with transistors) d) Find Av Vou/vs, R and R Note: lo 1mA, Kn-31 6mAN2 VM-1.73 Lambda0 Mi Config. Mz Config.- RS sk R4 100 C2 OuF Ro R2 50 C1 M1 100uF 50% Ri Vs R3 50k 000uF R10 1.8k
Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the...
Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the following parameters: K'-1 mA/V2 and λ-0.02 w. v°' is a small signal AC voltage ource 8V 8V Vout Ra 2.56 mA Fig. Q6 (a) Calculate the DC gate voltage, Va. (b) Assuming that the n-MOSFET is operating in the saturation region and neglecting channel length modulation, calculate the threshold voltage, VrHN, given that the voltage drop across the de current sorce, Inas, has been...
1. (20 pts) Consider the circuit below. The capacitors are infinite and can be considered ac...
1. (20 pts) Consider the circuit below. The capacitors are infinite and can be considered ac short a. Find the voltages at the gate, drain and source as well as the drain current. Let b. Find gm and the common-source voltage gain Vout/Vin. Ignore MOSFET output circuits resistance ro. c. Sketch the ac equivalent model of the circuit. 12V 4k 0M out BM 3k
2. For the circuit below, the n-channel enhancement MOSFET is biased to have gm-4 mA/V Find...
2. For the circuit below, the n-channel enhancement MOSFET is biased to have gm-4 mA/V Find the mid-band voltage gain AM Design the bypass and coupling capacitors to have the three low frequency poles at 50 Hz, 10 Hz and 3 Hz, respectively. It is the rule of thumb to have a minimum total capacitance. What is the fi? If a Rs-500 Ω is inserted between the source and Cs. What the Cs should be for a same pole frequency...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristic...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
For the circuit below, NEED HELP ASAP 5. For the amplifier circuit below, i. Find the...
For the circuit below, NEED HELP ASAP
5. For the amplifier circuit below, i. Find the values for Rs and RD such that ID 2mA and VD SV. Use VDD=10V, Vtn-IV, and kn-1 mA/V2. Rsig = 50Ω. ii. If VA-o, draw the small signal model of the amplifier. iii. Calculate the gm of the MOSFET. iv. Calculate the small signal voltage gain (Vos) VDD 10V 6ΜΩ ID Co SI 4ΜΩ
4. For the oscillator circuit shown below, the amplifier is an with trans-resistance gain Rm Vo frequency of oscillator and minimum trans-resistance gan (15pts) (Hint: ideal tr short the input te...
4. For the oscillator circuit shown below, the amplifier is an with trans-resistance gain Rm Vo frequency of oscillator and minimum trans-resistance gan (15pts) (Hint: ideal tr short the input terminal to ground) ideal trans-resistance amplifier out /I. Apply the Barkhausen criterion to determine the Rm needed f0τ oscillation. resistance amplifier has zero input impedance, which effectively C R 2C I Trans-resistanceKww Vout amplifier Rm
4. For the oscillator circuit shown below, the amplifier is an with trans-resistance gain Rm...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF,...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF, and Vi 1.1 V. (For PSpice simulations, use parameters: VTO. 1.1 LAMBDA-002 KP-0.093 CGDO-4E-7 w=100u L-I00u for the 2N7000 MOSFET.) a. Determine the gain and gm of the circuit b. Determine the low-frequency (high-pass response) poles of the common-source amplifier due to the coupling...
Problem #1 (100pts) Consider the circuit shown in the Figure of three simpler circuits (stages). 1) Without solving...
Problem #1 (100pts) Consider the circuit shown in the Figure of three simpler circuits (stages). 1) Without solving for the transfer function find how each stage behaves versus frequency o 2) Using this information find how the total circuit behaves versus frequency 2) Find the transfer function for each stage 3) Find the transfer function of the total circuit 4) Plot the |H(jo) 2 as a cascade Av R4 R1 ww Vin Vout R3 Ov Stage II Stage II Stage...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
l (33 PTS.) A MOSFET two-stage amplifier is shown below a) Determine gm for both MOSFETS )ndicate the configuration (topology) of each amplifier stage raw the small-signal equivalent circuit of the entire amplifier (with transistors) d) Find Av Vou/vs, R and R Note: lo 1mA, Kn-31 6mAN2 VM-1.73 Lambda0 Mi Config. Mz Config.- RS sk R4 100 C2 OuF Ro R2 50 C1 M1 100uF 50% Ri Vs R3 50k 000uF R10 1.8k
Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the following parameters: K'-1 mA/V2 and λ-0.02 w. v°' is a small signal AC voltage ource 8V 8V Vout Ra 2.56 mA Fig. Q6 (a) Calculate the DC gate voltage, Va. (b) Assuming that the n-MOSFET is operating in the saturation region and neglecting channel length modulation, calculate the threshold voltage, VrHN, given that the voltage drop across the de current sorce, Inas, has been...
1. (20 pts) Consider the circuit below. The capacitors are infinite and can be considered ac short a. Find the voltages at the gate, drain and source as well as the drain current. Let b. Find gm and the common-source voltage gain Vout/Vin. Ignore MOSFET output circuits resistance ro. c. Sketch the ac equivalent model of the circuit. 12V 4k 0M out BM 3k
2. For the circuit below, the n-channel enhancement MOSFET is biased to have gm-4 mA/V Find the mid-band voltage gain AM Design the bypass and coupling capacitors to have the three low frequency poles at 50 Hz, 10 Hz and 3 Hz, respectively. It is the rule of thumb to have a minimum total capacitance. What is the fi? If a Rs-500 Ω is inserted between the source and Cs. What the Cs should be for a same pole frequency...
II) The characteristics of the MOSFET in figure la are shown in figure 1b. Use the characteristics in figure 1b, not the equations in your textbook, to answer the following A) From figure lb estimate gm and ro for the FET in the saturation region. Include calculations or an explanation with your answer B Find the values for Re Rd. VDD and VGG so that zin- 100k, zout 5k, L 2 mA and Vds-5 C) Find the GAIN-vo/vi 2oUT Rg...
For the circuit below, NEED HELP ASAP
5. For the amplifier circuit below, i. Find the values for Rs and RD such that ID 2mA and VD SV. Use VDD=10V, Vtn-IV, and kn-1 mA/V2. Rsig = 50Ω. ii. If VA-o, draw the small signal model of the amplifier. iii. Calculate the gm of the MOSFET. iv. Calculate the small signal voltage gain (Vos) VDD 10V 6ΜΩ ID Co SI 4ΜΩ
4. For the oscillator circuit shown below, the amplifier is an with trans-resistance gain Rm Vo frequency of oscillator and minimum trans-resistance gan (15pts) (Hint: ideal tr short the input terminal to ground) ideal trans-resistance amplifier out /I. Apply the Barkhausen criterion to determine the Rm needed f0τ oscillation. resistance amplifier has zero input impedance, which effectively C R 2C I Trans-resistanceKww Vout amplifier Rm
4. For the oscillator circuit shown below, the amplifier is an with trans-resistance gain Rm...
1. Design the common source amplifier shown in Figure 1 with Ip- 1 mA and Vo 5 V Determine V2 and Ri. The MOSFET characteristics are V-50 V, k-0.093 A/V, gate-to- drain capacitance, Cd 40 pF, and Vi 1.1 V. (For PSpice simulations, use parameters: VTO. 1.1 LAMBDA-002 KP-0.093 CGDO-4E-7 w=100u L-I00u for the 2N7000 MOSFET.) a. Determine the gain and gm of the circuit b. Determine the low-frequency (high-pass response) poles of the common-source amplifier due to the coupling...
Problem #1 (100pts) Consider the circuit shown in the Figure of three simpler circuits (stages). 1) Without solving for the transfer function find how each stage behaves versus frequency o 2) Using this information find how the total circuit behaves versus frequency 2) Find the transfer function for each stage 3) Find the transfer function of the total circuit 4) Plot the |H(jo) 2 as a cascade Av R4 R1 ww Vin Vout R3 Ov Stage II Stage II Stage...
4. The MOSFET in the circuit given below has Vi- 1 V, kn 0.8 mA/V2, and VA 40 V a) Find the values of Rs, Ro, and Ro so that Io -0.1 mA, the largest possible value for RD is used while a maximum signal swing at the drain of tl V is possible, and the input resistance at the gate is 10 MS2. b) Find the values of gm and ro at the bias point c) If terminal Z...
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