photodiode
A vacuum photodiode operates at a voltage of 2.5 kV and has a response time of
270 ps. Determine the plate spacing, assuming that the time response is limited by
the transit time.
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photodiode
Assume that the total time response of a vacuum photodiode is given by the sum ofthe transit time and the RC time constant. (a) Derive an expression for the plateseparation d that minimizes the total response time. Put your answer in terms of theapplied voltage V0, the plate area A, and the load resistor R. (b) Calculate this optimumplate separation for parallel plates of diameter 2 cm, a voltage 2.5 kV, and aload resistance 50 _. Repeat for a load...
Photodiode Detectors
Assume the total response time of a silicon photodiode can be taken as the sum of the transit time (limited by saturation velocity 105 m/s) and the RC rise time tr. Derive an expression for the optimum intrinsic region thickness d. If the load resistance is 50 _ and the detector area is 0.01 mm2, calculate d and the resulting detector bandwidth.
Photodiode Detectors
A silicon photodiode is configured as shown in Fig. 14-18 with a 90 V bias voltage. The light to be detected has intensity 20 _W/cm2 and wavelength 920 nm. Relevant material properties for the detector are: absorption efficiency = 0.18, dark current density at room temperature = 15 nA/cm2, charge carrier mobility = 0.048 m2/Vs, and carrier saturation velocity = 105 m/s. At the applied bias voltage, it is known that the width of the depletion region is 0.2 mm....
Photodiode Detectors
A high-speed germanium PIN photodiode has a depletion width of 10 _m and a reverse-bias voltage of 10 V. The hole mobility in Ge is _ 0.2 m2/(Vs), the saturation velocity is _ 7 × 104 m/s, and the refractive index at 1300 nm is _ 4.3. (a) Determine the transit time limit to the response time, and calculate the corresponding 3 dB electrical bandwidth. (b) If light of wavelength 1300 nm is detected, determine the fraction of incident light...
Photodiode Detectors
A silicon p–n junction photodiode has junction area 1 cm2, and doping levels 1014 and 1016 cm–3 on the n and p sides, respectively. It is reverse biased with 15 V and a 10 k_ load resistor is used. (a) Determine the 3 dB electrical bandwidth due to the RC time constant. (b) Determine the bandwidth due to the hole transit time. (c) What is the limiting bandwidth in this case?
Photodiode Detectors
14.3 The photodiode of Problem 14.1 is removed from the circuit and operated in the photovoltaic mode. (a) Determine the shunt resistance assuming _ = 2. (b) Under open circuit conditions (no load resistor), what incident optical power will result in saturation of the output voltage? (c) A load resistor is now added to increase the dynamic range. What value of load resistance is needed so that optical powers up to 20 _W can be detected without saturation?
A GaAs n-channel, depletion-mode MESFET has a gate length of 1 um, a channel thickness of 0.30 im...
A GaAs n-channel, depletion-mode MESFET has a gate length of 1 um, a channel thickness of 0.30 im and a channel doping concentration of 101/cm'. Assume that the source to drain spacing equals the gate length. The transconductance is 18 millimhos and the gate to source capacitance is 5 pF. a. What is the pinch off voltage? b. What is the cutoff frequency in the transit time limit? c. What is the cutoff frequency as limited by input capacitance?
A...
Problem 7. Three-phase Balanced Fault Analysis. For the two-generator system below, a three-phase short occurs at point A. Ignoring prefault currents and assuming a prefault bus voltage of 1.0 р.u.,...
Problem 7. Three-phase Balanced Fault Analysis. For the two-generator system below, a three-phase short occurs at point A. Ignoring prefault currents and assuming a prefault bus voltage of 1.0 р.u., determine the fault current, in kA, contributed from generator G Assume base values of 50 MVA and 50 kV on transmission line side. 25 kV 50 MVA, 2.5% 1:2 50 MVA, 2090 25 kV 75.MVA, 15% г,-0.4% Figure 1
Problem 7. Three-phase Balanced Fault Analysis. For the two-generator system below,...
he parameters of a two-cavity amplifier klystron are as follows: Beam voltage: Beam current Vo 1200 V lo-28 mA Frequenc...
he parameters of a two-cavity amplifier klystron are as follows: Beam voltage: Beam current Vo 1200 V lo-28 mA Frequency; f 8 GHz Gap spacing in either cavity: Spacing between the two cavities: L4 cm Rsh40 k2 (excluding beam loading Effective shunt resistance: a. Find the input microwave voltage Vi in order to generate a maximum output voltage V2 (including the finite transit-time effect through the cavities). b. Determine the voltage gain (neglecting the beam loading in the output cavity...
Example 22 A three-phase, 60-Hz, completely transposed 345-kV, 200-km line has two 795,000-cmil (403-mm2) 26/2 ACSR conductors per bundle and the following positive-sequence line constants: z 0.03...
Example 22 A three-phase, 60-Hz, completely transposed 345-kV, 200-km line has two 795,000-cmil (403-mm2) 26/2 ACSR conductors per bundle and the following positive-sequence line constants: z 0.032 + 10.35 /km y j4.2 x 10-6 S/km Full load at the receiving end of the line is 700 MW at 0.99 p.f. leading and at 95% of rated voltage. Assuming a medium-length line, determine the following: a. ABCD parameters of the nominal π circuit b. Sending-end voltage Vs, current Is, and real...
A GaAs n-channel, depletion-mode MESFET has a gate length of 1 um, a channel thickness of 0.30 im and a channel doping concentration of 101/cm'. Assume that the source to drain spacing equals the gate length. The transconductance is 18 millimhos and the gate to source capacitance is 5 pF. a. What is the pinch off voltage? b. What is the cutoff frequency in the transit time limit? c. What is the cutoff frequency as limited by input capacitance?
A...
Problem 7. Three-phase Balanced Fault Analysis. For the two-generator system below, a three-phase short occurs at point A. Ignoring prefault currents and assuming a prefault bus voltage of 1.0 р.u., determine the fault current, in kA, contributed from generator G Assume base values of 50 MVA and 50 kV on transmission line side. 25 kV 50 MVA, 2.5% 1:2 50 MVA, 2090 25 kV 75.MVA, 15% г,-0.4% Figure 1
Problem 7. Three-phase Balanced Fault Analysis. For the two-generator system below,...
he parameters of a two-cavity amplifier klystron are as follows: Beam voltage: Beam current Vo 1200 V lo-28 mA Frequency; f 8 GHz Gap spacing in either cavity: Spacing between the two cavities: L4 cm Rsh40 k2 (excluding beam loading Effective shunt resistance: a. Find the input microwave voltage Vi in order to generate a maximum output voltage V2 (including the finite transit-time effect through the cavities). b. Determine the voltage gain (neglecting the beam loading in the output cavity...
Example 22 A three-phase, 60-Hz, completely transposed 345-kV, 200-km line has two 795,000-cmil (403-mm2) 26/2 ACSR conductors per bundle and the following positive-sequence line constants: z 0.032 + 10.35 /km y j4.2 x 10-6 S/km Full load at the receiving end of the line is 700 MW at 0.99 p.f. leading and at 95% of rated voltage. Assuming a medium-length line, determine the following: a. ABCD parameters of the nominal π circuit b. Sending-end voltage Vs, current Is, and real...
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