Q1. Ideal diode and ideality factor Two solar cells have an open circuit voltage of 0.85...
Q3. Consider an ideal solar cell with following parameters: Short circuit current - A and open circuit voltage 0.6V. current LOAD (a) Find the diode saturation current (lo) of the solar cell. (10 points) (b) Estimate the power delivered by the solar cell to a load of RL -0.1. Justify any approximation in your calculation (10 points) (e) After few years of field operation, the solar cell developed series resistance of R, ohms and shunt resistance of Rsh ohms. Draw...
1. a) State the diode equation and explain the significance of each term. b) Sketch the current - voltage characteristics for a typical silicon diode over the 4 voltage range -2 V to +2 V. Explain how the characteristics would change if the diode was fabricated using germanium. Give an equivalent circuit representation of the device in each case. c) In a silicon diode a current of 200 HA flows when a forward bias voltage of 0.5 V4 is applied...
A typical Si-based PV cell will have a form factor, FF=0.7, and an open circuit voltage VOC=0.6 V and a short-circuit current density JSC=30 mA/cm2. What is the maximum real efficiency of this cell? Suppose now that by improving the manufacturing process, you are able to increase the carrier lifetime by a factor of 3. If nothing else is changed in the PV cell design? By how much will the efficiency improve? Hint: JSC is proportional to square root of...
1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...