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A Si p- n junction with cross sectional area A= 0.01cm2 is formed with Na=2x1017 cm-3 , Nd= 1017cm-3 . Calculate: a) contact potential b) the depletion region width and c) the junction capacity at 0 and -2 Volts.
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V? Biased Si p-n...
Calculate (a) the B-C built-in potential,b-B and (b) the width of the B-C depletion region if the C-B voltage is VcB 6 V. The physical parameters Nc 2x100 cm-..,NB T =23.8 m I 1.7 x 8.85x10-14, q-1.6 хі0-19, η-1.5x 1010 cm-3
3. A long Si sample, n-doped 5x106cm, with a cross-sectional area of 0.49 cm² is optically excited by a laser (the laser light is absorbed near the surface) such that 1020 per cm electron-hole pairs are generated per second at x-Oum. These excess charge carriers diffuse to the right. What is the total diffusion current at x = 40 um? Electron and hole lifetimes are both 7 us, Mp=500cm?/V-s; D.= 36cm/s.
7. a) A Si p-n junction has dopant concentrations Na = 2 x 1016/cm3 and Nd=1x1015/cm3 at T=300 K. Calculate (a) Vo, (b) W at VR=0 and VR=2 V and (c) the maximum electric field in the space charge region at VR=0 and VR=4 V. b) For the junction in part a, how much would the temperature need to increase to have V0 decrease by 1%?
Determine the maximum width of the depletion region, Wmax?? An n-channel metal-SiO2-Si MOSFET has the following parameters: 16 ст.3 NA = 4x 101 μη-I 000 cmr/(V.sec ) Фт.--0.925 eV, Gate oxide thickness tox-d= 3.0x10-6 cm Dimensions: L = 0.5x10-4 cm, Z = 1 x 104 cm Oxide Charges: Qs = 4.8x 10-8 Coul/cm, Qm= Q,-Qu = 0, Assume -9.65x10 cm3,T-300 K and KT-0.0259 eV cm . . An n-channel metal-SiO2-Si MOSFET has the following parameters: 16 ст.3 NA = 4x...