An abrupt silicon p-n junction (NA=1016 cm-3 and ND=5×1016 cm-3 ) is biased with Va=0.6 V, calculate the ideal diode current assuming that the n-type is much smaller than the diffusion length with wn=2 µm and assuming a long p-type region, use µp=500 cm

P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...

P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...

P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x...

P3. For an ideal abrupt silicon (Si) P*N diode with doping concentrations Na = 1 x 107 cm3 and N 1 x 105 cm. (a) Find the stored minority carriers density in the N-side neutral region (infinitely long comparing with Lp and Ln) when a forward bias of 1 V is applied. (b) Calculate the hole current density in the region of (a) at x, 0. (Assume the average diffusion length of hole is 5 um the average carrier life...

Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minor...

Problem 3 (25 points) Consider a silicon pn junction at T - 300 K, NA- 1016 cm3, ND-5x1016 cm-3. The minority carrier lifetimes are τα , τ,-1 us. The junction is forward biased with Va-0.5V The minority carrier diffusion coefficients are D 25 cm/s, Da- 10 cm2/s n,1.5x1010 cm3 kT 0.0267 Depletion region p-type n-type a) (5 points) Calculate the excess electron concentration as a function of x in the p-side (see the figure above) b) (10 points) Calculate the...

The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3,...

The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3, Wcathode = 1 μm <<Lp, - NA = 5 × 10^15 cm−3, Wanode = 10 μm <<Ln, - Junction area AJ = 500 × 500 μm2. Calculate the reverse biasing current IS, and then use this result to obtain the forward voltage that corresponds to a current of 100 mA, if the semiconductor material is: (a) Si (μn = 1450 cm2/V · s, μp...

Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and...

Consider an abrupt p-n junction consisted of a p-side silicon doped with 1.0E+15 cm-3 acceptors and an n- side silicon doped with 1.0E+15 cm-3 donors at room temperature (no donors in p-side and no acceptors in n-side). a. Calculate the Fermi levels on each side of the junction with respect to Ei. Use the Special Conditions to find the concentrations. b. Calculate the contact potential. c .Calculate the ratio, Xpo/Xno

Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 c...

Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V? Biased Si p-n...

A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a)...

A silicon p+ n step junction diode at room temperature has N_d = 10^16 cm-3. a) What breakdown mechanism do you expect will be dominant in this device? Explain. b) Find the approximate breakdown voltage for this diode. c) Calculate the depletion width at the breakdown voltage. d) What is the maximum magnitude of the electric field in the depletion region at the breakdown voltage?

A Si p- n junction with cross sectional area A= 0.01cm2 is formed with Na=2x1017 cm-3 , Nd= 1017cm-3 . Calculate: a) contact potential b) the depletion region width and c) the junction capacity at 0 and -2 Volts.

6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10 cm2. De-21 cm/sec, D-10 cm/sec, G 10 cmsn-1010 cm-3, Es-1.05 101 F/em. (20...

6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10 cm2. De-21 cm/sec, D-10 cm/sec, G 10 cmsn-1010 cm-3, Es-1.05 101 F/em. (20 pts). Assume an ideal solar cell at 300K. IV characteristics can be given by J Js ekT 1)-Isc under the illumination. (20 pts) (a) Calculate the Jsc (15 pts) 6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10...

1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properti...

1) Useful parameters for CdTe a. ni- 1e8 cm 3 2) kT 25.8mev Problem #1 (100 points) Consider an ideal, long-diode type solar cell made of a CdTe abrupt asymmetrical PN junction. The relevant properties of the p-type CdTe absorber are: thickness - 3 um, doping - le14 cm3, electron mobility 100 cm2/V/s, and electron lifetime 10 ns. The n type region is doped much higher than CdTe 1. Calculate the saturation current density 2. Calculate the short-circuit current, assuming...