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n + - p junction (area = 10-4 cm2 ) at 300K has the following parameters. Find the maximum electric field and the current with a forward bias of 0.5 V. n side p side Nd=Çok yüksek Na=1017 cm-3 p=10 s n=0.1 s n=100 cm2 /V.s n=700 cm2 /V.s p=450 cm2
For an abrupt p-n junction of Area = 10-4 cm2, the measured capacitance under reverse bias of 20 V is 12 pF/cm2. Calculate the donor concentration.
The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3, Wcathode = 1 μm <<Lp, - NA = 5 × 10^15 cm−3, Wanode = 10 μm <<Ln, - Junction area AJ = 500 × 500 μm2. Calculate the reverse biasing current IS, and then use this result to obtain the forward voltage that corresponds to a current of 100 mA, if the semiconductor material is: (a) Si (μn = 1450 cm2/V · s, μp...
2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured capacitance under reverse bias of 20 V is 12 pF/cm^2. Calculate the donor concentration.
Problem 1 (25 points) Consider a silicon pn junction with a cross section area of 1x105 cm, a forward bias Va 0.5V, and the following parameters at T- 300K: 16cm-3 15 3 -6 KT n: 1.5x100 cm", ε' = 1 1 .7x 8.854x 10-14 Flon;ー-0.025 V Assume the critical field to be equal to 3x105 V/cm. a) (5 points) Compare the hole density at xn to the electron density at-Xp b) (5 points) Compare the hole current at xn to...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V? Biased Si p-n...
consider a silicon pn junction diode at 300 K with nd= na = 10^16 cm-3, u_n 1350 cm^2/v-s, u_p 480 cm^2/v-s, and t_no = t_po= 5×10^-7 s. consider two bias conditions: i) a reverse bias of 1.0 v ii) a forward bias of 0.2 v a) for each bus condition, roughly sketch the band gap diagram - accurately label the energy gap in eV - indicate the difference between E_f on the two sides id the junction and label its...
5) A Si solar cell with junction cross sectional dimensions 2 cm ×2 cmis formed with Na 1018 cm3 on the p side and Nd 1018cm3 on the n side. It is operated at a temperature of 300 K and τn-tp-1 μ. a) Using the mobilities on the equation sheet, calculate the dark saturation current. b) An intrinsic region of thickness 200 μm is sandwiched between the p and n regions in order to enhance the active volume of the...
7. a) A Si p-n junction has dopant concentrations Na = 2 x 1016/cm3 and Nd=1x1015/cm3 at T=300 K. Calculate (a) Vo, (b) W at VR=0 and VR=2 V and (c) the maximum electric field in the space charge region at VR=0 and VR=4 V. b) For the junction in part a, how much would the temperature need to increase to have V0 decrease by 1%?
6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10 cm2. De-21 cm/sec, D-10 cm/sec, G 10 cmsn-1010 cm-3, Es-1.05 101 F/em. (20 pts). Assume an ideal solar cell at 300K. IV characteristics can be given by J Js ekT 1)-Isc under the illumination. (20 pts) (a) Calculate the Jsc (15 pts) 6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10...