2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured capacitance under reverse bias...
2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured capacitance under reverse bias of 20 V is 12 pF/cm^2. Calculate the donor concentration.
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2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured
capacitance under reverse bias...
For an abrupt p-n junction of Area = 10-4 cm2, the measured capacitance under reverse bias...
For an abrupt p-n junction of Area = 10-4 cm2, the measured capacitance under reverse bias of 20 V is 12 pF/cm2. Calculate the donor concentration.
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 c...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V?
Biased Si p-n...
Please answer question 2 part c 2. The following table is the reverse bias capacitance of...
Please answer question 2 part c
2. The following table is the reverse bias capacitance of a p+-n step junction diode. If the area of the diode is 1 x 10-2cmand the semiconductor is uniformly doped, calculate the following assuming the relative dielectric constant of the semiconductor is Ks = 10, E = 8.854 x 10-14 F/cm, 1pF=10-12F, and the plot of +2 versus V is straight line. Voltage (V) Capacitance (PF) 420 344 298 266 243 5 - (a)...
The ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction...
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of the electric field across the junction. [4 pts.]
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10-...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
The depletion width in an abrupt p-n junction is 0.45 μ m at thermal equilibrium. What...
The depletion width in an abrupt p-n junction is 0.45 μ m at thermal equilibrium. What is the new depletion width under a reverse bias voltage of 2 V? The built-in voltage is 0.35V.
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concent...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
Biased Si p-n junction (a) An abrupt Si p-n junction (Schottky model) of square cross section with area of 1x10-4 cm* has the following properties at 300 K: side Na - 1x1017 cm3 n side Na=1x1015 -3 cim =10us 200 cm 2/Vs) In 700 cm2/(Vs) In = 1300 cm 2/(Vs - 450 cm/(Vs) The junction is forward biased by 0.5 V. What is the forward current? (b) What is the current at a reverse bias of-0.5 V?
Biased Si p-n...
Please answer question 2 part c
2. The following table is the reverse bias capacitance of a p+-n step junction diode. If the area of the diode is 1 x 10-2cmand the semiconductor is uniformly doped, calculate the following assuming the relative dielectric constant of the semiconductor is Ks = 10, E = 8.854 x 10-14 F/cm, 1pF=10-12F, and the plot of +2 versus V is straight line. Voltage (V) Capacitance (PF) 420 344 298 266 243 5 - (a)...
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of the electric field across the junction. [4 pts.]
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of...
2. An abrupt silicon p-n junction is formed from p-type material with a resistivity of 1.3x10- 12m and n-type material with resistivity of 4.6x10- Sam at room temperature. The lifetimes of the p- and n-materials are 100 us and 150 us respectively, and the junction area is 1.0 mm?.if Mp 4.8x102 m²/V.s „Mn = 0.135 m²/V.s and n; = 1.5x1016 carrier /m , calculate the reverse bias leakage current. Then calculate forward bias current if a 0.3 volt is applied.
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
Biased Sip-n junction A Si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of Na 1x1015 cm3 on the p-side and a donor concentration of Na- 1x10" cmon the n-side. Calculate at 300 K (a) the diffusion voltage VD (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 eV. Assume that the current is diffusion dominated. The electron and hole mobilities are ln-1500 cm2/(Vs) and...
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