The depletion width in an abrupt p-n junction is 0.45 μ m at thermal equilibrium. What...
The depletion width in an abrupt p-n junction is 0.45 μ m at thermal equilibrium. What is the new depletion width under a reverse bias voltage of 2 V? The built-in voltage is 0.35V.
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The depletion width in an abrupt p-n junction is 0.45 μ m at
thermal equilibrium. What...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
Consider an abrupt p-n diode - made of an unknown semiconductor - in thermal equilibrium with...
Consider an abrupt p-n diode - made of an unknown semiconductor - in thermal equilibrium with as many donors in the n-type region as acceptors in the p-type region and a maximum electric field of -13 kV/cm and a total depletion layer width of 1 µm. (assume es/ e0 = 12) a) What is the applied voltage, Va? b) What is the built-in potential of the diode? c) What are the donor density in the n-type region and the acceptor...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
For an abrupt p-n junction of Area = 10-4 cm2, the measured capacitance under reverse bias...
For an abrupt p-n junction of Area = 10-4 cm2, the measured capacitance under reverse bias of 20 V is 12 pF/cm2. Calculate the donor concentration.
2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured capacitance under reverse bias...
2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured capacitance under reverse bias of 20 V is 12 pF/cm^2. Calculate the donor concentration.
5. Sketch the energy band diagram for a p'-n step junction diode at: (a) thermal equilibrium;...
5. Sketch the energy band diagram for a p'-n step junction diode at: (a) thermal equilibrium; (b) forward bias (show with respect to thermal equilibrium) (c) reverse bias (show with respect to thermal equilibrium) (d) in part (a) sketch a new diagram showing the carrier flux and the four current components with respect to each other.
The ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction...
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of the electric field across the junction. [4 pts.]
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of...
An abrupt junction GaAs diode is doped with acceptors on the P-side at a concentration of 1016 cm−3 , donors on the N-side at a concentration of 1017 cm−3 and operated at 300 K. The hole recombination time on the N-side 0.2 µs and the electron recombination time on the P-side is 2 µs. The cross sectional area is 10-2 cm2 a) Calculate the reverse saturation current. b) Calculate the contact potential. e) Calculate the bias voltage needed to obtain...
4. AP-N abrupt junction is formed in Silicon as follows: The P-side has a uniform acceptor concentration of 2E18/cm^3 and the N-side has a uniform donor concentration of 2E15/cm^3. (a) Find the built-in voltage, V of the P-N junction at 300K. (b) Find the width of the depletion regions in the P and N regions of the transition region for zero reverse bias and for 5V reverse bias. (c) What is the depletion capacitance per unit area with zero reverse...
1. Consider a p-n junction diode with doping concentrations: NA6.5x1015 cm3 and ND 107 cm3 in the p- and n-sides, respectively. (a) Calculate the free electron and hole concentrations in both p- and n-sides' neutral regions. (b) Find the barrier height and the built-in voltage. (c) Sketch the energy band diagram of the complete p-n junction. Mark all energy levels including the barrier height and show the energy level values. (d) Calculate the total depletion width under zero bias. (e)...
Problem 4: An abrupt silicon p-n junction diode has the following characteristics. side n-side N-4x 1016cm N1016cm3 n 1000 cm2/V sec 350 cm2/V sec Area A 102cm2 Calculate the following quantities: (a) Reverse saturation hole current component (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, p(0) and pr(0), for a forward voltage of 0.6 V (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch...
5. Sketch the energy band diagram for a p'-n step junction diode at: (a) thermal equilibrium; (b) forward bias (show with respect to thermal equilibrium) (c) reverse bias (show with respect to thermal equilibrium) (d) in part (a) sketch a new diagram showing the carrier flux and the four current components with respect to each other.
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of the electric field across the junction. [4 pts.]
the ratio of hole to electron current for 0.65 V applied bias in a long-base, abrupt p-n junction de made from silicon having Na-100cm" and Nd-5x10"cm". The carrier lifetimes are 2 μ Sketch the magnitude of...
An ideal metal-semiconductor (M-S) junction is formed on the n-type Si semiconductor that is uniformly doped with a donor impurity (phosphorus) concentration of 1016 cm. The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Assuming that this M-S junction is at 300K, give your best answers to the following questions. (50 points) (a) At thermal equilibrium, draw the energy band diagram including meaningful parameters (energy barriers, energy levels, depletion width, etc.). (b) Calculate the...
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