1. Problem 1: For the circuit below, where β-100 and VT 25mV a. Find the dc...
In the amplifier circuit below, the transistor has the following properties:Vt =1.5V,k’n=100 microA/V2,W=2 micro m ,L=0.2 micro m, lambda = 0V^-1 a. Find the dc values VG, VD, and VS. b. Verify (prove) that the circuit is in the proper region of operation for an amplifier c. Find the transconductance value, gm d. Draw the equivalent small-signal circuit model, replacing the NMOS with its pi-model e. Draw the equivalent small-signal circuit model, replacing the NMOS with its T-model f. Calculate...
The BJT amplifier circuit in the figure below has β = 90. Use VT = 25 mV a- Draw the DC equivalent circuit and calculate IC. b- Draw the small signal equivalent circuit and calculate the small signal parameters. c- Find the voltage gain +9V 3 kΩ C2 = 1 uF HE C = 1uF + υο 10 kΩ Cz = 50 uF - . υ 9 kΩ Η. 6. ΚΩ -9 V
the following BJT circuit with β-100, Vini-oTV, and VT-25mV, and 15V DC nse a simple current mirror to design for an Ie-ImA. Show your current mirror design. onally, design for optimum biasing of the circuit given that the current in the divider is 0.1 b) Given t sources IE. Re Ro
i just need help with B, C, D 3) (24 pts) The BJT amplifier shown below. Please answer the following questions. Consider that B=150 VBE=0.75 V and VT-25mV a) What type of amplifier is this? (Select One) CE CE with RE CB b) Find the DC collector current Ic c) Find the transconductance gain gm d) Find the internal small signal voltage gain Au e) Find the input resistance of the small signal amplifier 1) Find the output resistance of...
Assume |VBE|= 0.7 V, β=99, VT=25mV. Complete the DC analysis for the circuit (Compute all branch currents and terminal voltages). Problem1: Assume |VE|= 0.7 V, B=99, VT=25mV. Complete the DC analysis for the circuit (Compute all branch currents and terminal voltages). No Solution Accepted On The Circuit Itself. Equations Need To Be Spelled Out First Then Numbers Substituted. If You Don't Comply, No Grade & Don't Bother. 1 kg Co 2 R1 30 kg 2 ka Cin Vin 100F 2N3904...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown to obtain IE= 0.5 mA and Vc= +6 V. Design for a dc voltage at the base of 5 V and a current through RB2 of 50 μΑ. Let Vcc-+15 V, β-100, and VBE 0.7 V. a) Specify the values of RBi, RB2, RE, and Rc b) Also give the values of the BJT small-signal parameters gm, rr , and ro at the bias...
Q. 4. (a) Draw a small signal equivalent circuit by replacing the BJT with its hybrid-1 model for the circuit shown below. Also derive an expression for Zin when ro is neglected. (iv) + Vx
Draw a small signal equivalent circuit by replacing the BJT with its hybrid-i model for the circuit shown below. Also derive an expression for Zin when rais neglected. + Vx
Given a BJT amplifier as shown in the following figure where ? = 60. The capacitors C1, C2 and C3 are considered to have very large values.a. Perform DC analysis and compute Quiestcent point of the transistor (Icq, Vceq). b. Draw small signal equivalent circuit of the above circuit at midband and calculate Rout and overall voltage gain Gv = Vout(t)⁄Vsig(t) of the circuit at midband.
The BJTs in the circuit below has the same β = 90 and the same collector current. Assume I = 1.9 mA, RC=900 Ω, and use VT = 25 mV. a- What is the configuration of each stage of the amplifier? Explain and add to the figure below the input and the output of each stage. b- Draw the small signal equivalent circuit and find the small signal parameters. c- Find the voltage gain of this amplifier Vcc Rc Vo...