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6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown...
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to...
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to have Vt 1 V, kn = 4mA/V2 and V4 = 100 V. Neglecting the Early effect, design for ID-0.5mA, VS= 3.5 V, VD6 V and VDD 15 V. Specify the values of RD and Rs If a current of 2 μΑ is used in the voltage divider, specify the values of RG1 and RG2. Give the values of the MOSFET parameters gm and ro...
7.53 For the circuit shown in Fig. P7.53, draw a complete small-signal equivalent circuit utilizing an...
7.53 For the circuit shown in Fig. P7.53, draw a complete small-signal equivalent circuit utilizing an appropriate T model for the BJT (use a =0.99). Your circuit should show the values of all components, including the model parameters. What is the input resistance R ? Calculate the overall voltage gain (v,/v). (also find A, for this amp) sig +5 V RC 12 kΩ C2 RL 12 ΚΩ Rsig 75 N ) 0.33 mA Vsig Rin Figure P7.53
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and open circuit gain First, design a common emitter BJT a...
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and
open circuit gain
First, design a common emitter BJT amplifier Second, analyze the amplifier.( Avo, Gv, Rin, Rout) Third, compare your calculation with Multisim. Report must include comparison between your calculation & simulation results overall voltage gain, open circuit voltage gain, input resistance, and output resistance. This design project is not group work, must be done individually. Type your report. Design a discrete common emitter BJT amplifier.(Determine...
please answer this ASAP Answer the following questions for the below BJT amplifier circuit. Assume capacitors...
please answer this ASAP
Answer the following questions for the below BJT amplifier circuit. Assume capacitors are short in the signal circuit. Use Vr 25 mV,B = 100, Vpo = 0.7 V, and Ignore the early effect in the bias and signal circuits Find the Bias parameters of the amplifier circuit a) b) Find the small signal parameters of the amplifier. c) Draw the small signal equivalent circuit. Find the open loop voltage gain (Ayo), voltage gain (A,), total circuit...
(25pts) 2. Design a four resister BJT (CE) bias circuit (using method 1 or 2) for...
(25pts) 2. Design a four resister BJT (CE) bias circuit (using method 1 or 2) for the following specifications: loq=1.5 mA, VCEQ=5 V, Vcc=14 V. Find all resistor values. Assume a BJT transistor (npn) with B=180 and V Be=0.7V Draw the designed circuit with all values.
4. For the amplifier in the figure below use the parameters in the table: +Vcc Re VBE- 0.7V, Ri- ...
4. For the amplifier in the figure below use the parameters in the table: +Vcc Re VBE- 0.7V, Ri- 1002, R1-160k2, R2-320k2 R3-200k2, R6-40 k2, Rc-60k2, Vcc- 12V, Ry Do a) Draw the DC equivalent circuit and calculate the Q-point. c) Draw the AC equivalent circuit with the small signal model for the transistor. d) Calculate the voltage gain, Av-Vo/vi. Assume ro infinite. e) Draw the circuit to find the amplifier input resistance (Rin). Calculate Rin f Draw the circuit...
Shown below is a single stage common emitter amplifier with a unipolar dc power supply using an 2...
Shown below is a single stage common emitter amplifier with a unipolar dc power supply using an 2N3904 NPN BJT as the active device. It is specified that V+ 40 V, C1 C2CE 100uF, Ro-7.5 k2, REi-5.1kS2, and Ri - 36k52. Design the circuit so that the dc collector current is 2 mA and the magnitude of the small-signal midband voltage gain is 32.3. For the design calculations assume that the base-to- emitter dc voltage drop is 0.65 V, the...
Design the inductively coupled common emitter (CE) amplifier shown in Fig. for Q. 7(a) to drive...
Design the inductively coupled common emitter (CE) amplifier
shown in Fig. for Q. 7(a) to drive a 2 kQ. load with Vcc = 12 V,
VBE = 0.7 Y, β = 200, Rin = 4 kQ. and Av = -10.
Determine the current gain Ai and power delivered to the load
Po.
[Hint: Draw the small signal equivalent circuit and use Rg = 0.1BRę, where R, =R,||R, ). -- -- oom. . b 09 PR Vo - . Fig. for...
please I need details l and....Debate Club | Offic A) Theoretical Design Design a common emitter BJT amplifier with the following requirements: -Rin-10 K2, and Ro-45 ㏀ (Neglect the Early voltage...
please I need details
l and....Debate Club | Offic A) Theoretical Design Design a common emitter BJT amplifier with the following requirements: -Rin-10 K2, and Ro-45 ㏀ (Neglect the Early voltage Effect) Vo/Vsig- Gv-40 VIV or 32 dB " VCC-9 V V, IC-1mA, VCE-3.25V and β-100 RL-40 kQ, Rsige I ka, R 1-3R2, and C1-C2-1 μF Voc RC C2 R1 Rsig C1 RL R2 RE B) Verify your design using Orcad Capture Pspice by doing 1) AC sweep (frequency response):...
Design a common-source MOSFET amplifier such that RG is a multiple of D = o.st mot...
Design a common-source MOSFET amplifier such that RG is a multiple of D = o.st mot (Avol 15.02 VN RL = 17kr • Choose a sinusoidal signal voltage, Vsig, with Rsig = 400 kN to use as the input in this problem. Use 2 kHz as the frequency of your sinusoidal. This is a design problem so vsig will not be unique. Use V+ = 0.8 V, k = 5 mA/V2, and VA = 80 V for your MOSFET. Assume...
Exercise 7.37: Design the bias circuit for the CS amplifier. Assume the MOSFET is specified to have Vt 1 V, kn = 4mA/V2 and V4 = 100 V. Neglecting the Early effect, design for ID-0.5mA, VS= 3.5 V, VD6 V and VDD 15 V. Specify the values of RD and Rs If a current of 2 μΑ is used in the voltage divider, specify the values of RG1 and RG2. Give the values of the MOSFET parameters gm and ro...
7.53 For the circuit shown in Fig. P7.53, draw a complete small-signal equivalent circuit utilizing an appropriate T model for the BJT (use a =0.99). Your circuit should show the values of all components, including the model parameters. What is the input resistance R ? Calculate the overall voltage gain (v,/v). (also find A, for this amp) sig +5 V RC 12 kΩ C2 RL 12 ΚΩ Rsig 75 N ) 0.33 mA Vsig Rin Figure P7.53
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and
open circuit gain
First, design a common emitter BJT amplifier Second, analyze the amplifier.( Avo, Gv, Rin, Rout) Third, compare your calculation with Multisim. Report must include comparison between your calculation & simulation results overall voltage gain, open circuit voltage gain, input resistance, and output resistance. This design project is not group work, must be done individually. Type your report. Design a discrete common emitter BJT amplifier.(Determine...
please answer this ASAP
Answer the following questions for the below BJT amplifier circuit. Assume capacitors are short in the signal circuit. Use Vr 25 mV,B = 100, Vpo = 0.7 V, and Ignore the early effect in the bias and signal circuits Find the Bias parameters of the amplifier circuit a) b) Find the small signal parameters of the amplifier. c) Draw the small signal equivalent circuit. Find the open loop voltage gain (Ayo), voltage gain (A,), total circuit...
(25pts) 2. Design a four resister BJT (CE) bias circuit (using method 1 or 2) for the following specifications: loq=1.5 mA, VCEQ=5 V, Vcc=14 V. Find all resistor values. Assume a BJT transistor (npn) with B=180 and V Be=0.7V Draw the designed circuit with all values.
4. For the amplifier in the figure below use the parameters in the table: +Vcc Re VBE- 0.7V, Ri- 1002, R1-160k2, R2-320k2 R3-200k2, R6-40 k2, Rc-60k2, Vcc- 12V, Ry Do a) Draw the DC equivalent circuit and calculate the Q-point. c) Draw the AC equivalent circuit with the small signal model for the transistor. d) Calculate the voltage gain, Av-Vo/vi. Assume ro infinite. e) Draw the circuit to find the amplifier input resistance (Rin). Calculate Rin f Draw the circuit...
Shown below is a single stage common emitter amplifier with a unipolar dc power supply using an 2N3904 NPN BJT as the active device. It is specified that V+ 40 V, C1 C2CE 100uF, Ro-7.5 k2, REi-5.1kS2, and Ri - 36k52. Design the circuit so that the dc collector current is 2 mA and the magnitude of the small-signal midband voltage gain is 32.3. For the design calculations assume that the base-to- emitter dc voltage drop is 0.65 V, the...
Design the inductively coupled common emitter (CE) amplifier
shown in Fig. for Q. 7(a) to drive a 2 kQ. load with Vcc = 12 V,
VBE = 0.7 Y, β = 200, Rin = 4 kQ. and Av = -10.
Determine the current gain Ai and power delivered to the load
Po.
[Hint: Draw the small signal equivalent circuit and use Rg = 0.1BRę, where R, =R,||R, ). -- -- oom. . b 09 PR Vo - . Fig. for...
please I need details
l and....Debate Club | Offic A) Theoretical Design Design a common emitter BJT amplifier with the following requirements: -Rin-10 K2, and Ro-45 ㏀ (Neglect the Early voltage Effect) Vo/Vsig- Gv-40 VIV or 32 dB " VCC-9 V V, IC-1mA, VCE-3.25V and β-100 RL-40 kQ, Rsige I ka, R 1-3R2, and C1-C2-1 μF Voc RC C2 R1 Rsig C1 RL R2 RE B) Verify your design using Orcad Capture Pspice by doing 1) AC sweep (frequency response):...
Design a common-source MOSFET amplifier such that RG is a multiple of D = o.st mot (Avol 15.02 VN RL = 17kr • Choose a sinusoidal signal voltage, Vsig, with Rsig = 400 kN to use as the input in this problem. Use 2 kHz as the frequency of your sinusoidal. This is a design problem so vsig will not be unique. Use V+ = 0.8 V, k = 5 mA/V2, and VA = 80 V for your MOSFET. Assume...
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