(25pts) 2. Design a four resister BJT (CE) bias circuit (using method 1 or 2) for...
(25pts) 1. Draw and analyze a four resister BJT (CE) bias circuit with the following values: Ri=70 k 2, Rz=100 k., Rc=5k92, Re=3 k2 and Voc=16 V. Find the operating points Ico and VCEQ Assume a BJT transistor (npn) with B=250 and VBe=0.7V
(25pts) 1. Draw and analyze a four resister BJT (CE) bias circuit with the following values: Ri=70k12, R2=100 k 2, Rc=5 k1, RE=3 k2 and Vac=16 V, Find the operating points loo and VCEQ Assume a BJT transistor (non) with B=250 and VBe=0.7V
(25pts) 4. Design a four resistors n-Channel JFET bias circuit for the following specifications: Ip = 3mA, Vps = 7V. Assume: VDD = 14 V, Ipss = 6mA, Vp =- 5V and I = 0 Find Vas and all resistors values. Draw the designed circuit with all calculated values.
(25pts) 4. Design a four resistors n-Channel JFET bias circuit for the following specifications: ID=3mA, VDs = 7V. Assume: Vpp = 14 V, IDss=6mA, Vp=- 5V and Ig=0 Find Vos and all resistors values. Draw the designed circuit with all calculated values.
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown to obtain IE= 0.5 mA and Vc= +6 V. Design for a dc voltage at the base of 5 V and a current through RB2 of 50 μΑ. Let Vcc-+15 V, β-100, and VBE 0.7 V. a) Specify the values of RBi, RB2, RE, and Rc b) Also give the values of the BJT small-signal parameters gm, rr , and ro at the bias...
4. Design a four resistors n-Channel JFET bias circuit for the following specifications: Ip = 3mA, VDs = 7V. Assume: Vpp = 14 V, Ipss = 6mA, Vp = - 5V and Ig 0 Find Vos and all resistors values. Draw the designed circuit with all calculated values.
please help Design a four resistors n-Channel JFET bias circuit for the following specifications: Ip=3mA, Vps = 7V. Assume: Vpp = 14 V, IDss = 6mA, Vp = -5V and I = 0 Find VGs and all resistors values. Draw the designed circuit with all calculated values.
(2+5 pts) Consider the bias circuit below for a transistor amplifier designed for active region operation. The desired bias point parameters are lg = 3 mA and Ic = 2.97 mA. Assume VBE- 0.7 V and VT=25 mV. Determine the emitter voltage VE . Choose the best answer. VCC +15 V Vc RBB VB LVE V BB RE 500 S2 1.49 V O2v 01.5V O 0.7V
4. Design a npn BJT C-E amplifier circuit for the following specifications and given values: Voltage Gain Input resistance Load resistance Supply voltage Av = -60 Ri = 5k92 RL = 6k2 Vcc= 16V Assume Re is fully bypassed. The input source internal resistance Rs = 0.12. B=120 and VBE= 0.65V. Draw the actual circuit and its ac equivalent circuit
FIND THE VALUES OF Rb1, Rb2, Re,Rc, rin , rout, overall gain and open circuit gain First, design a common emitter BJT amplifier Second, analyze the amplifier.( Avo, Gv, Rin, Rout) Third, compare your calculation with Multisim. Report must include comparison between your calculation & simulation results overall voltage gain, open circuit voltage gain, input resistance, and output resistance. This design project is not group work, must be done individually. Type your report. Design a discrete common emitter BJT amplifier.(Determine...