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the following BJT circuit with β-100, Vini-oTV, and VT-25mV, and 15V DC nse a simple current...
1. Problem 1: For the circuit below, where β-100 and VT 25mV a. Find the dc...
1. Problem 1: For the circuit below, where β-100 and VT 25mV a. Find the dc collector current, Ic. b. Find the small signal parameters: gm , Γπ and re- c. Draw the small-signal equivalent circuit by replacing the BJT with its hybrid-t model. d. Draw the small-signal equivalent circuit by replacing the BJT with its T model. e. Use the circuit in c or d to determine the voltage gains (Ao, A.) and overall gain (Gv) 5V 1V Vout...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value o...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value of IEQ (b) Find the small-signal voltage gain Av Vo/vs (c) Determine the output resistance R, looking into output terminals Av= 0.5589 Ro-0.4688 Ω Ro-0.9118 Ω leQ- 23.76 mA Ra " 0.6538 Ω leo 39.52 mA A, 0.9938
For the circuit shown below,...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown to obtain IE= 0.5 mA and Vc= +6 V. Design for a dc voltage at the base of 5 V and a current through RB2 of 50 μΑ. Let Vcc-+15 V, β-100, and VBE 0.7 V. a) Specify the values of RBi, RB2, RE, and Rc b) Also give the values of the BJT small-signal parameters gm, rr , and ro at the bias...
Design a BJT amplifier based on the specifications provided in the table below. Your design shoul...
THE STEPS TO DO SO:
Design a BJT amplifier based on the specifications provided in the table below. Your design should be insensitive to β variations, and both the input and the output should be AC coupled as in Fig. 1. Supply Voltage, Vcc Load Resistance, RL Transistor's Current Gain, β Relative Variation of lc for VBE-0.7 ± 0.1 V 0-to-Peak Output Swing, Vo Voltage Gain, A Input Resistance, R THD for 5kHz IV (0-to-peak) Sine Wave Output Voltage, V。S5%...
1. Problem 1: For the circuit below, where β-100 and VT 25mV a. Find the dc collector current, Ic. b. Find the small signal parameters: gm , Γπ and re- c. Draw the small-signal equivalent circuit by replacing the BJT with its hybrid-t model. d. Draw the small-signal equivalent circuit by replacing the BJT with its T model. e. Use the circuit in c or d to determine the voltage gains (Ao, A.) and overall gain (Gv) 5V 1V Vout...
For the circuit shown below, let Vcc 9 V R2 RE-0.11 kQ, R1 3.6 k2. and R2 -5.6 kQ. The transistor parameters are β-200, VBE(on)-OTV, VA-100 V and VT = 0.026 V. (a) Determine the quiescent value of IEQ (b) Find the small-signal voltage gain Av Vo/vs (c) Determine the output resistance R, looking into output terminals Av= 0.5589 Ro-0.4688 Ω Ro-0.9118 Ω leQ- 23.76 mA Ra " 0.6538 Ω leo 39.52 mA A, 0.9938
For the circuit shown below,...
6.5 BI C2 Cl sig in 0 Design the bias circuit of the CE amplifier shown to obtain IE= 0.5 mA and Vc= +6 V. Design for a dc voltage at the base of 5 V and a current through RB2 of 50 μΑ. Let Vcc-+15 V, β-100, and VBE 0.7 V. a) Specify the values of RBi, RB2, RE, and Rc b) Also give the values of the BJT small-signal parameters gm, rr , and ro at the bias...
THE STEPS TO DO SO:
Design a BJT amplifier based on the specifications provided in the table below. Your design should be insensitive to β variations, and both the input and the output should be AC coupled as in Fig. 1. Supply Voltage, Vcc Load Resistance, RL Transistor's Current Gain, β Relative Variation of lc for VBE-0.7 ± 0.1 V 0-to-Peak Output Swing, Vo Voltage Gain, A Input Resistance, R THD for 5kHz IV (0-to-peak) Sine Wave Output Voltage, V。S5%...
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