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Assume you have a BJT circuit in saturation mode shown below. If you increase the base...
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep ...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector...
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an in...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow...
For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak signal swing on the collector without clipping? Use Vcc = 8V, Vee = -6V, Vb = 2.0v, and Re = 9.1k02. Assume that to keep the transistor in the forward-active region, the base- collector junction cannot be forward biased. Use B = 65 and Vbelon) = 0.7V. Neglect the effects of base-width modulation. VCC 芒Vs windows
k) Biasing of a BJT transistor is the setting of the collector emitter voltage and the...
k) Biasing of a BJT transistor is the setting of the collector emitter voltage and the collector current to the desired dc values. These voltages and currents determine the operating point (quiescent point, Q point). The three circuits given in Fig. 6.4 are designed to give the same operating point 12V 12V Rc Rc 12V R1 ?1 Rc R1 ?? Figure 6.4 a. Obtain the expression for VC in terms of the transistor parameters ?, VBE, Ico and the circuit...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
3. Given the circuit shown below, assume ß = 99 .You may neglect BJT resistor r,...
3. Given the circuit shown below, assume ß = 99 .You may neglect BJT resistor r, . Determine the following: a. Differential input resistance b. Magnitude of the differential voltage gain c. Magnitude of the common mode voltage gain d. DC voltage from collector to emitter. o 15oits 35k2 £5k2 36kr 6-15volts
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at...
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
I keep getting the wrong answer from everyone else pls help me get the right answer For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak si...
I keep getting the wrong answer from everyone else pls help me
get the right answer
For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak signal swing on the collector without clipping? Use Vcc-9V, Vee--7V, Vb-1.2V, and Re -9.9k2. Assume that to keep the transistor in the forward-active region, the base-collector junction cannot be forward biased. Use B 20 and Vbe(on) 0.7V. Neglect the effects of base-width modulation. Vcc...
please choose one of the answer choices above. Must show all work, thank you Question 1...
please choose one of the answer choices above.
Must show all work, thank you
Question 1 CIRCUIT A.1 (2.5 Marks) + Vcc RB IB Rc Vc VB Fig. 1: CIRCUIT A.1 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.1 (denoting the type Circuit A1). Assume the following: Vcc= 12 volt; Rc = 3.6 k; RB = 500 k and a = 0.9....
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak signal swing on the collector without clipping? Use Vcc = 8V, Vee = -6V, Vb = 2.0v, and Re = 9.1k02. Assume that to keep the transistor in the forward-active region, the base- collector junction cannot be forward biased. Use B = 65 and Vbelon) = 0.7V. Neglect the effects of base-width modulation. VCC 芒Vs windows
k) Biasing of a BJT transistor is the setting of the collector emitter voltage and the collector current to the desired dc values. These voltages and currents determine the operating point (quiescent point, Q point). The three circuits given in Fig. 6.4 are designed to give the same operating point 12V 12V Rc Rc 12V R1 ?1 Rc R1 ?? Figure 6.4 a. Obtain the expression for VC in terms of the transistor parameters ?, VBE, Ico and the circuit...
*5. Design a BJT transistor drive circuit like the one shown Figure 10-7 (Hart's text) with an initial peak base current, IB,-8 1B2, where 1B2 denotes the minimum base current required to drive the transistor to saturation. Assume a collector load resistance, Rc-8 Ω, collector supply voltage Vs = 30 V, large signal current of the transistor, hFE-min. 10, max. 20), VBE(on)-0.8 V, and the input is periodic pulse waveform (0 to 6) V, with a duty cycle, D-0.5. Also,...
3. Given the circuit shown below, assume ß = 99 .You may neglect BJT resistor r, . Determine the following: a. Differential input resistance b. Magnitude of the differential voltage gain c. Magnitude of the common mode voltage gain d. DC voltage from collector to emitter. o 15oits 35k2 £5k2 36kr 6-15volts
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
I keep getting the wrong answer from everyone else pls help me
get the right answer
For the BJT bias circuit shown, what value of Rc in kilohms is needed to allow the maximum possible peak-to-peak signal swing on the collector without clipping? Use Vcc-9V, Vee--7V, Vb-1.2V, and Re -9.9k2. Assume that to keep the transistor in the forward-active region, the base-collector junction cannot be forward biased. Use B 20 and Vbe(on) 0.7V. Neglect the effects of base-width modulation. Vcc...
please choose one of the answer choices above.
Must show all work, thank you
Question 1 CIRCUIT A.1 (2.5 Marks) + Vcc RB IB Rc Vc VB Fig. 1: CIRCUIT A.1 Statement: Sketching relevant output (Vc-Ic) characteristics decide on Q-point coordinates and DC load-line details: That is, determine DC operating conditions of the NPN-BJT/Si circuit of Fig.1 (denoting the type Circuit A1). Assume the following: Vcc= 12 volt; Rc = 3.6 k; RB = 500 k and a = 0.9....
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