explain the process Lab Preparation 1. Using DC analysis, and assuming that the transistors (QREF and...
Lab Preparation . Using DC analysis, and assuming that the transistors (QuEr and Q) are in the active mode, determine the value of RREF required for generating a copy current of 0.755 mA. Take the value of Vcc to be 8 V, and the value of VE in the active mode to be equal to 0.7V. Vee H Qur о RaI Figure 3 Single-stage amplifier biased by a simple current miror device 2. The circuit shown in Figure 3, is...
1. Using DC analysis, and assuming that the transistors (QRer and Qi) are in the active mode, determine the value of RREF required for generating a copy current of 0.755 mA. Take the value of Vcc to be 8 V, and the value of VBE in the active
2. In the following current mirror circuit, Vcc -10V, and the three transistors, Q1, Q2, Q3, have the same saturation current (i.e.,IssIs), and with V for active mode is 0.7V. Then, the three beta values are given by: β91-100, ßQ2-50, and ßQ3-200. The thermal voltage is ντ-25mV. Assuming that you need an output current of i1mA: ref db (a) Find the collector, base, and emitter current for all three Q1 O2 transistors when ia 1mA. (b) Find the refern ie....
For the differential amplifier shown in Figure 6: Assume well-matched transistors and = 100 for all transistors: a) Why it is important to use well-matched transistors in differential amplifier circuits? What is the potential influence of mismatched transistors on the performance of the differential amplifier? b) Determine the resistor values (R1, R2 and R3) such that the emitter coupled current IE = 0.5 mA and VC1 = 3 V. c) Draw the ac equivalent circuit for the single ended...
1. Consider the following circuit using 0.18um technology transistors Q, and Qn specified by processing parameter k-eCon W/L)-1.6 mA/N, Vn-0.5V,,-0, voltage at drain of transistor Qi is Voi-0.7V, and both transistors are identical. a. Identify the type of transistors, e n-MOSFET, or p-MOSFET, or D-MOSFETor b. Calculate the current through both transistors Ip, and the value of resistance R, and c. Find VGsiand VGs2 of the two transistors Qi and Q d. What is the mode of operation of the...
D. For the transistor circuit shown in Figure 7, assuming that the transistor is in the forward active mode, and B = 100 and VBE = 0.7V, calculate Base current 1B Collector current Ic (iii) Emitter current le (iv) Collector to emitter voltage Vce and (v) Voltage across the 2009 resistor v 3 80022 10 kV W VCE VBE مت + + 1 2001} 1 1
Problem 1: BJT DC Circuits Analyze the four circuits below, first analytically and then verify using simulations in PSPICE/Multisim. You have to solve each circuit that is, find the status of the BUT (active, saturation or cutoff mode) and then find all the node voltages and all the currents. Whenever you solve manually always make the following assumptions: for npn BIT VE-0.7V (if the BE junction is forward biased) for pap BIT VEB-0.7V (if the BE junction is forward biased)...
Assume, VAfor differential pair transistors. Which of the following statements is incorrect? CO7 57.2 k VO3 VO2 C2 01 E6 REF E6 C3 V15V 04 V 15 V The differential stage is biased by basic 3 transistor current course (with double emitter on its output) Ideally Vo3 should be at 0.7V so that it produces a 0 output when there is no differential mode input signal. Gain of Vo3 Vd is approximately equal to 1 since it acts as emitter...
Laboratory 2: Transistor circuit characteristics A. Objectives: 1. To study the basic characteristics of a transistor circuit. 2. To study the bias circuit of a transistor circuit. B. Apparatus: 1. DC Power supply 2. Experimental boards and corresponding components 3. Electronic calculator (prepared by students) 4. Digital camera (prepared by students for photo taking of the experimental results) 5. Laptop computer with the software PicoScope 6 and Microsoft Word installed. 6. PicoScope PC Oscilloscope and its accessories. 7. Digital multi-meter....
Shown below is a single stage common emitter amplifier with a unipolar dc power supply using an 2N3904 NPN BJT as the active device. It is specified that V+ 40 V, C1 C2CE 100uF, Ro-7.5 k2, REi-5.1kS2, and Ri - 36k52. Design the circuit so that the dc collector current is 2 mA and the magnitude of the small-signal midband voltage gain is 32.3. For the design calculations assume that the base-to- emitter dc voltage drop is 0.65 V, the...