1) Sketch the bond model and 2) the energy band model illustrating a broken Si-Si bond for each model. Label Ec and Ev for the energy band model.
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1) Sketch the bond model and 2) the energy band model illustrating a broken Si-Si bond...
Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy E, and the Fermi energy E. 1. 2 marks Find an expression for Ee -Ef, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration ND. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon so that Ec- E0.2 eV. 3 marks
1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy Ec and the Fermi energy Ep 2 marks Find an expression for Ec - Ep, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration Np. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon that Ec Ef = 0.2 eV So 4 marks
1. Energy band model a) For silicon, if Eg decreases by 0.078 eV, by what fraction does ni increase (assume T is constant at 300K)? b) If the temperature rises from 300K to 600K, by what additional fraction does n, increase (assume Eg is constant 1.068 eV, you do not need to worry about the decrease from problem a)? c) If we further increase the temperature, Si starts exhibiting semi-metal properties. Think ofa physical reason for this phenomenon. (Assume you...
7. Sketch a plot on graph paper illustrating the variation of the Gibbs energy of the solid, liquid and gaseous phases with the temperature. Label your diagram in full. Briefly discuss the key features of the plot. [8]
1) A Germanium sample is characterized by the following energy band at room temperature, calculate the electron and hole concentrations in this semiconductor. Ec Ev
9. Sketch the Energy Band Diagram for an (a) n-type material and (b) p-type material and identify the majority and minority carriers for each band diagram. Label ALL energy bands.
(ii) Sketch the energy band diagram of this doped material in (i) at 0 K and identify all the important features in your diagram. (3) (iii) Now sketch the same energy band diagram as in (i) but at a temperature of 300 K. Again, label all the important features in your diagram. (3)
For a Si p-n junction with p-type doping of 1 x 10^16/cm3 and n-type doping of 1 x 10^19/cm3, calculate the built-in potential Vb at 300K, dark, thermal equilibrium condition. Please show the equations and parameters used in the calculation and the value of Ec-Ef, Ef-Ev, and Vb. Please draw a band structure similar to the one in lecture 5 slide 6 based on your results, please also label Ec, Ev, Vb, and Ef in the drawing.
1. a. Find the main error in each of the band diagrams shown below. For all of the band diagrams Ny 1019/cm3, Ne- 1019/cm3, ni = 3 x 108/cm". E,-1.25 eV, T = 300 K. Ef Ef EFi Main error: Main error: Main error: Main error: Consider a semiconductor sample with the following characteristics: EG 1.25 eV, T 300 K, Nd 5 x 101*/cm3, Na 1014/cm3, N.-1019/cm3, N.-1019/cm3, ni-3 × 108/cm3. Assume complete ionization b. Find the equilibrium electron and...
Suppose the bond in a molecule is broken by photons of energy 5.8 eV . A.) Determine the frequency of these photons. Express your answer to two significant figures and include the appropriate units. B.) Determine the wavelength of these photons. Express your answer to two significant figures and include the appropriate units.