1) A Germanium sample is characterized by the following energy band at room temperature, calculate the...
or a Silicon sample energy band diagram shown below, assume room temperature and the band gap Eg 1.1 eV 6) F calculate the probability of a state with energy Ec to be filled; calculate the probability ofa state with energy Ev to be empty. a. b. 0.2 eV Ее Ef Ev enn l+ or a Silicon sample energy band diagram shown below, assume room temperature and the band gap Eg 1.1 eV 6) F calculate the probability of a state...
The band structure of an unknown semiconductor is given by Ec (k) = 20k2 - 20k +6.5 [eV] Ey (k) = 6k2 + 0.6k - 0.065 [eV] where the wavevector k is measured in units of A-1. Assume room temperature. (a) Is this a direct-gap or an indirect-gap semiconductor? What is its energy gap? (15 points) (b) Determine the effective mass for electron and holes for this semiconductor. (10 points) The band structure of an unknown semiconductor is given by...
The band structure of an unknown semiconductor is given by Ec (k) = 20k2 20k +6.5 [eV] Ey (k) = -6k2 +0.6k - 0.065 [eV] where the wavevector k is measured in units of A-1. Assume room temperature. (a) Is this a direct-gap or an indirect-gap semiconductor? What is its energy gap? (15 points) (b) Determine the effective mass for electron and holes for this semiconductor. (10 points) The band structure of an unknown semiconductor is given by Ec (k)...
2. The equilibrium and steady state conditions before and after illumination of a silicon semiconductor are characterized by the energy band shown in figure below. Determine for before and after illumination: (Assume room temperature, and use the semiconductor parameters given in the textbook) a) no and po the equilibrium carrier concentrations b) n and p under steady state conditions. c) No? d) e) Do we have low injection condition when the semiconductor is illuminated? What is the resistivity of the...
Si sample doped with donors 101°cm-3 initially at room temperature 300 °K (n 31010 cm. Later it is excited optically as such 1019 cm-3electron-hole pairs are produced in one second uniformly in the sample. Si band gap energy isEg-1.11 eV and the recombination for hole electron life-time10 μs. Hint may use results of question 1 above. Draw appropriate figures and mark related levels! a) Calculate the equilibrium Fermi level with respect to conduction band edge Ec b) Calculate the equilibrium...
1. a. Find the main error in each of the band diagrams shown below. For all of the band diagrams Ny 1019/cm3, Ne- 1019/cm3, ni = 3 x 108/cm". E,-1.25 eV, T = 300 K. Ef Ef EFi Main error: Main error: Main error: Main error: Consider a semiconductor sample with the following characteristics: EG 1.25 eV, T 300 K, Nd 5 x 101*/cm3, Na 1014/cm3, N.-1019/cm3, N.-1019/cm3, ni-3 × 108/cm3. Assume complete ionization b. Find the equilibrium electron and...
It is about our school's assginment. But i cannot understand and figure out how to solve it.. Seriously i need your help. Thank you. Assignment: Consider a thin Si sample with two metallic contacts on each side. The structure is at room temperature in thermal equilibrium and the doping is ND1015 cm everywhere. The Schottky barrier height of both metal-semiconductor junctions is qpBn - 0.7 eV. For the following three situations,) calculate the electron and hole concentrations and the electric...
(0)If in GaAs, the Fermi level is 0.30 eV below the conduction band. [10] calculate the thermal equilibrium electron and hole concentration at room temperature. Bandgap of CaAs is 1.42 eV, the effective density of states of the conduction band at 300K is 4.7x10 cm and the effective density of states of the valence band is 7x10¹ cm³.L213(11)Identify and illustrate with required equations and diagrams, how energy and momentum are conserved in band to band transitions in indirect band gap...
Consider a semiconductor material X, with the following parameters at a room temperature of 300K: Energy bandgap of Eg = 1.15 ev, density of states at the Conduction band edge of Nc = 4.8e+23, effective density of states at the Valance band edge of Nv = 1e+25, drift mobilities of the electrons and holes, ue and uh, such that ue =0.4 and uh = 0.02. (1) What is the intrinsic concentration and conductivity of 'material x' at room temperature 300K?...
7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium, gallium arsenide, and indium arsenide. Use the effective density of states values from problem 5. 8. a. Draw a band diagram for silicon doped 107/cmp-type and label the band gap and the position of the Fermi level. b. Draw a band diagram for gallium arsenide doped 10/cmn-type and label the band gap and the position of the Fermi level. c. Draw a band diagram...