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5. Consider the following structure of dynamic MOS logic circuits. Assume that the minimum size of...
2. Consider the following structure of dynamic MOS logic circuits. Assume that the minimum size of...
2. Consider the following structure of dynamic MOS logic circuits. Assume that the minimum size of an NMOS is 2.5 units (n 2.5) and a PMOS is 3 units (p 3) with channel length of 0.2 um (L 0.2 um). Determine the minimal channel width (in um) of cach of the transistor below, so that the logic is operational. (30 %) AVDD oa, Y-A+BC o (c)
2 Consider the following structure of a logic circuit in 0.15 um technologies. Assume that the...
2 Consider the following structure of a logic circuit in 0.15 um technologies. Assume that the minimum channel area to turn on an NMOS device is 0.3 um by 0.15 um and turn on a PMOS device is 0.45 um by 0.15 um respectively. Determine the channel area needed in (um) of each transistor for the circuit, so that the logic is operational. (25 %) Poge t 2
Question 1: Select the single correct answer [2 marks each] Which of the following statements is ...
CMOS VLSI DESIGN, Please attempt all the
objective type questions.CMOS
Question 1: Select the single correct answer [2 marks each] Which of the following statements is true for a MOSFET switch (input is gate node)? A) nMOS is off with logic I' at input B) nMOS is on with logic '1' at input C) pMOS is on with logic '1' at input' D) pMOS is off with logic '0' at input Which of the following CMOS logic circuits will contain...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NM...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
1. Consider the circuit below a. What is the logic function implemented by the CMOS transistor...
1. Consider the circuit below a. What is the logic function implemented by the CMOS transistor network? Size the NMOS and PMOS devices so that the output resistance is the same as that of an inverter with an NMOS WIL 4 and PMOS W/L 8 b. What are the input patterns that give the worst case tpHL and tpLH. State clearly what are the initial input patterns and which input(s) has to make a transition in order to achieve this...
Size the transistors in the shown logic gate, so that tPHL = 45ps and tPLH= 53ps....
Size the transistors in the shown logic gate, so that tPHL = 45ps and tPLH= 53ps. The gate is connected to external load of 30fF All transistors have minimum length L-2A-0.25 μm. Use the following values for the transistor resistances: Rsq.n-13 kΩ and Rsqp-31 kΩ Neglect the capacitances at the internal nodes and assume that the extemal load capacitance is much greater than the transistor capacitances 3 A-d 14 out 6
5). In this problem, you are asked to consider the ac hybrid-x model for an NMOS transistor and t...
5). In this problem, you are asked to consider the ac hybrid-x model for an NMOS transistor and to relate the capacitors to the physical device structure. Recall the oxide capacitance per unit area ox) appears in the DC Ip-Vs relationship for triode and saturation regions. The NMOS transistor has kn-0.2 mA/V2, W 10 μm, L-I μm and μ,-1000 cm2/Vsec. a) Find the total gate-to-channel capacitance for small VDs, CG-cho. Hint: this is the parallel-plate capacitance between the gate and...
5). In this problem, you are asked to consider the ac hybrid-t model for an NMOS transistor and t...
5). In this problem, you are asked to consider the ac hybrid-t model for an NMOS transistor and to relate the capacitors to the physical device structure. Recall the oxide capacitance per unit area (Cox) appears in the DC ID-Vos relationship for triode and saturation regions. The NMOS transistor has kn-0.2 mA/V2, w-10 μm, L-1 μm and μ,-1000 cm2/Vsec. a) Find the total gate-to-channel capacitance for small Vos, CG-cho. Hint: this is the parallel-plate capacitance between the gate and the...
TYU 16.5 Consider the NMOS logic circuit in Figure 16.18. Assume transistor parameters of kn = 10...
need TYU 16.6
TYU 16.5 Consider the NMOS logic circuit in Figure 16.18. Assume transistor parameters of kn = 100 μ A/ V, and VT = 0.4 V. Assume all driver transistors are identical. Neglect the body effect. (a) If (W/L)L = 0.5, determine (W/L) for the drivers such that VOL(max) = 80μ V. Assume logic 1 input voltages are 2.1 V. 68 Part 3 Digital Electronics VDD = 5 V 0 MDA C DA B DC Figure 16.18 Figure...
3) AMOS Assume a mon I V. 2 V.V2V threshold voltage of 0.7 V. The transistor...
3) AMOS Assume a mon I V. 2 V.V2V threshold voltage of 0.7 V. The transistor is in c Sammation ut off d. Not sufficient information since substrate and source are at different voltage levels None of the above 4) Choose the best answer regarding channel length modulation effect Results in lower drain current b. Increases absolute value of the threshold voltage thru body effect Depletion region effectively shortens the channel length d. Makes drain current depend on drain voltage...
2. Consider the following structure of dynamic MOS logic circuits. Assume that the minimum size of an NMOS is 2.5 units (n 2.5) and a PMOS is 3 units (p 3) with channel length of 0.2 um (L 0.2 um). Determine the minimal channel width (in um) of cach of the transistor below, so that the logic is operational. (30 %) AVDD oa, Y-A+BC o (c)
2 Consider the following structure of a logic circuit in 0.15 um technologies. Assume that the minimum channel area to turn on an NMOS device is 0.3 um by 0.15 um and turn on a PMOS device is 0.45 um by 0.15 um respectively. Determine the channel area needed in (um) of each transistor for the circuit, so that the logic is operational. (25 %) Poge t 2
CMOS VLSI DESIGN, Please attempt all the
objective type questions.CMOS
Question 1: Select the single correct answer [2 marks each] Which of the following statements is true for a MOSFET switch (input is gate node)? A) nMOS is off with logic I' at input B) nMOS is on with logic '1' at input C) pMOS is on with logic '1' at input' D) pMOS is off with logic '0' at input Which of the following CMOS logic circuits will contain...
Table 1 Parameters for manual model of 0.13 micron CMOS process DSAT 0.416 0.39 0.297 254 0.14 NMOS PMOS -0.426 -0.29-0583 633 10261 Table 2 Capacitance parameters of NMOS and PMOS transistors in 0.13 micron CMOS process Cox Cov ma MOS 10.7 0.323 0.958 0.395 08 01 0288 0.8 P MOS-110.22ー10.298 11.02ー1042ー08 ー0.107ー0.1ーー0.8 (35 pt Q2 Inverter shown below is implemented in 0.13 um CMOS (8RF). The supply voltage is VDD-1.2 V. Both transistors have a channel length of 0.13...
1. Consider the circuit below a. What is the logic function implemented by the CMOS transistor network? Size the NMOS and PMOS devices so that the output resistance is the same as that of an inverter with an NMOS WIL 4 and PMOS W/L 8 b. What are the input patterns that give the worst case tpHL and tpLH. State clearly what are the initial input patterns and which input(s) has to make a transition in order to achieve this...
Size the transistors in the shown logic gate, so that tPHL = 45ps and tPLH= 53ps. The gate is connected to external load of 30fF All transistors have minimum length L-2A-0.25 μm. Use the following values for the transistor resistances: Rsq.n-13 kΩ and Rsqp-31 kΩ Neglect the capacitances at the internal nodes and assume that the extemal load capacitance is much greater than the transistor capacitances 3 A-d 14 out 6
5). In this problem, you are asked to consider the ac hybrid-x model for an NMOS transistor and to relate the capacitors to the physical device structure. Recall the oxide capacitance per unit area ox) appears in the DC Ip-Vs relationship for triode and saturation regions. The NMOS transistor has kn-0.2 mA/V2, W 10 μm, L-I μm and μ,-1000 cm2/Vsec. a) Find the total gate-to-channel capacitance for small VDs, CG-cho. Hint: this is the parallel-plate capacitance between the gate and...
5). In this problem, you are asked to consider the ac hybrid-t model for an NMOS transistor and to relate the capacitors to the physical device structure. Recall the oxide capacitance per unit area (Cox) appears in the DC ID-Vos relationship for triode and saturation regions. The NMOS transistor has kn-0.2 mA/V2, w-10 μm, L-1 μm and μ,-1000 cm2/Vsec. a) Find the total gate-to-channel capacitance for small Vos, CG-cho. Hint: this is the parallel-plate capacitance between the gate and the...
need TYU 16.6
TYU 16.5 Consider the NMOS logic circuit in Figure 16.18. Assume transistor parameters of kn = 100 μ A/ V, and VT = 0.4 V. Assume all driver transistors are identical. Neglect the body effect. (a) If (W/L)L = 0.5, determine (W/L) for the drivers such that VOL(max) = 80μ V. Assume logic 1 input voltages are 2.1 V. 68 Part 3 Digital Electronics VDD = 5 V 0 MDA C DA B DC Figure 16.18 Figure...
3) AMOS Assume a mon I V. 2 V.V2V threshold voltage of 0.7 V. The transistor is in c Sammation ut off d. Not sufficient information since substrate and source are at different voltage levels None of the above 4) Choose the best answer regarding channel length modulation effect Results in lower drain current b. Increases absolute value of the threshold voltage thru body effect Depletion region effectively shortens the channel length d. Makes drain current depend on drain voltage...
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