) It is required to use a JFET of fig. below as a linear resistor. the...
) It is required to use a JFET of fig. below as a linear resistor. the para meters of the JHET are as follow: W=, 100 Nm, L=10 um, a= 2.54m, the doping in the na layer is ND: 1016/cm3 and the electron mobility is 1500cm/v-sec; the depletion layer width of each the twop+ gate vegions are connected together externally. The resistances of the gate ave' negligible, determine the minimum value, et the linear resistore which can be realized JFET with out forward biasing the gate juncticho outside the using W SAN pt Gate 1- layer [pt-gate L Drain Source