Question

Problem 3. Wet etching vs. dry etching and dimensions (pdf (27)pdf Consider the wafer cross section below. A SiI,N, film of 250 nm, and a SiO, film of 250 nm are deposited above a silicon wafer as shown. This diagram original cross section will be used for all of problem 2. 100 Photoresist sio, a. List the possible, specific methods by which this particular silicon dioxide layer is generated (i.e. LPCVD, etc). b. List the three main mechanistic steps involved in wet etching c. Why is the selectivity of sputter etching between materials so low?

Answer 1