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1. State the spatial part of Sehrodinger's equation for one dimension (x) and explain the physical...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of E above and below EF. 2. Find (EP) 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E above and below EF. 2. Find f(EP). 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05 eV,...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is due to electric [20] tield. Carriers in the band are referred to as statistics is applied to electrons in The semiconductors. The position and principle states that we cannot simultaneously determine the of electrons. Vy is a . while w is a number and Current in the conduction is due to the flow of Extrinsic semiconductors are vii. viii. The wave function in Schrodinger's...
Please show all steps and explain your reasoning in detail for parts e, f, & g....
Please show all steps and explain your reasoning in detail for
parts e, f, & g. Ignore a - d. Thank you.
Consider a "2D electron gas". Ne electrons of mass m * confined to a square ofarea A = L2 with zero potential. Take the lowest level to be energy zero. a. What is the total number of states N with energy less than E including spin degeneracy? b. Deduce the energy density of states, defined by D(E) c....
Consider a one-dimensional well with one impenetrable wall. The potential energy is given by 0 x...
Consider a one-dimensional well with one impenetrable wall. The potential energy is given by 0 x < 0 V(x) = { -V. 0 < x < a 10 x > a We showed in the homework that the allowed energies for the eigenstates of a bound particle (E < 0) in this potential well satisfy the transcendental function -cotĚ = 16 - 52 $2 where 5 = koa, and ko = V2m(Vo + E)/ħ, and 5o = av2mV /ħ (a)...
1. Given the following wavefunction for the ground state of a finite quantum well of width 2nm, g...
1. Given the following wavefunction for the ground state of a finite quantum well of width 2nm, ground state energy of E1=0.05eV -A cos(kx) and ψ,-Beax A.) Find the values of k and a (remember to keep the wavefunction continuous and smooth)[10ptsl B.) Find the normalization constants A and B (you will need to find k first of course) [10pts] C.) Determine the barrier energy from the decay constant a? [5pts D.)If the well were replaced with a semi-infinite well...
8. The time independent Schrödinger equation (TISE) in one-dimension where m is the mass of the...
8. The time independent Schrödinger equation (TISE) in one-dimension where m is the mass of the particle, E ita energy, (z) the potential (a) Consider a particle moving in a constant pote E> Vo, show that the following wave function is a solution of the TISE and determine the relationahip betwoen E an zero inside the well, ie. V(2)a 0foros L, and is infinite ou , ie, V(x)-w (4) Assuming (b) Consider an infinite square well with walls at 1-0...
Question 21 Consider a free electron in one dimension (i.e. an electron free to move along...
Question 21 Consider a free electron in one dimension (i.e. an electron free to move along say the x-direction on (a) The time-independent Schrödinger equation is Αψη (x)-Εηψη (x), where is the Hamiltonian (total energy) operator, and ψη (x) are the electron wave functions associated with energies En Assuming the electron's energy entirely comprises kinetic energy (as it is 'free' there is no potential energy term), write down the Schrödinger equation given that the momentum operator in one- dimension is...
A NON stationary state A particle of mass m is in an infinite square well potential of width L, a...
A NON stationary state A particle of mass m is in an infinite square well potential of width L, as in McIntyre's section 5.4. Suppose we have an initial state vector lv(t -0) results from Mclntrye without re-deriving them, and you may use a computer for your math as long as you include your code in your solution A(3E1) 4iE2)). You may use E. (4 pts) Use a computer to plot this probability density at 4 times: t 0, t2...
2. (a) Assuming Anderson's rule and Vegard's law calculate the depth of the confining potential in meV, for holes in the valence band of a InAs/InxGa1-xAs multi QW structure where x-0.5. [5]...
2. (a) Assuming Anderson's rule and Vegard's law calculate the depth of the confining potential in meV, for holes in the valence band of a InAs/InxGa1-xAs multi QW structure where x-0.5. [5] State whether electron and hole confinement is within the InAs or InGaAs layers, and hence deduce what type of structure/band alignment this is. Suggest why this structure might be difficult to grow experimentally. (b) A Gao.47lno.53As quantum well laser is designed to emit at 1.55um at room temperature...
1. Sketch the Fermi-dirac probability function at T= 0 K and T=300 K for function of E above and below EF. 2. Find (EP) 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05...
1. Sketch the Fermi-dirac probability function at T=0 K and T=300 K for function of E above and below EF. 2. Find f(EP). 3. Describe Fermi Energy. What are the significances of Fermi energy level in semiconductor device physics? 4. Sktech Density of State Diagram, Fermi-dirac probability function diagram vs. E from there sketch n(E)vs.E and p(E)vs. E for N-type and P-type semiconductors, respectively. 5. A semiconductor has the following parameters: a. Eg = 1.12 eV, x = 4.05 eV,...
i. l e blank(s). A gap suggest two-word in your answer Drift current in semiconductors is due to electric [20] tield. Carriers in the band are referred to as statistics is applied to electrons in The semiconductors. The position and principle states that we cannot simultaneously determine the of electrons. Vy is a . while w is a number and Current in the conduction is due to the flow of Extrinsic semiconductors are vii. viii. The wave function in Schrodinger's...
Please show all steps and explain your reasoning in detail for
parts e, f, & g. Ignore a - d. Thank you.
Consider a "2D electron gas". Ne electrons of mass m * confined to a square ofarea A = L2 with zero potential. Take the lowest level to be energy zero. a. What is the total number of states N with energy less than E including spin degeneracy? b. Deduce the energy density of states, defined by D(E) c....
Consider a one-dimensional well with one impenetrable wall. The potential energy is given by 0 x < 0 V(x) = { -V. 0 < x < a 10 x > a We showed in the homework that the allowed energies for the eigenstates of a bound particle (E < 0) in this potential well satisfy the transcendental function -cotĚ = 16 - 52 $2 where 5 = koa, and ko = V2m(Vo + E)/ħ, and 5o = av2mV /ħ (a)...
1. Given the following wavefunction for the ground state of a finite quantum well of width 2nm, ground state energy of E1=0.05eV -A cos(kx) and ψ,-Beax A.) Find the values of k and a (remember to keep the wavefunction continuous and smooth)[10ptsl B.) Find the normalization constants A and B (you will need to find k first of course) [10pts] C.) Determine the barrier energy from the decay constant a? [5pts D.)If the well were replaced with a semi-infinite well...
8. The time independent Schrödinger equation (TISE) in one-dimension where m is the mass of the particle, E ita energy, (z) the potential (a) Consider a particle moving in a constant pote E> Vo, show that the following wave function is a solution of the TISE and determine the relationahip betwoen E an zero inside the well, ie. V(2)a 0foros L, and is infinite ou , ie, V(x)-w (4) Assuming (b) Consider an infinite square well with walls at 1-0...
Question 21 Consider a free electron in one dimension (i.e. an electron free to move along say the x-direction on (a) The time-independent Schrödinger equation is Αψη (x)-Εηψη (x), where is the Hamiltonian (total energy) operator, and ψη (x) are the electron wave functions associated with energies En Assuming the electron's energy entirely comprises kinetic energy (as it is 'free' there is no potential energy term), write down the Schrödinger equation given that the momentum operator in one- dimension is...
A NON stationary state A particle of mass m is in an infinite square well potential of width L, as in McIntyre's section 5.4. Suppose we have an initial state vector lv(t -0) results from Mclntrye without re-deriving them, and you may use a computer for your math as long as you include your code in your solution A(3E1) 4iE2)). You may use E. (4 pts) Use a computer to plot this probability density at 4 times: t 0, t2...
2. (a) Assuming Anderson's rule and Vegard's law calculate the depth of the confining potential in meV, for holes in the valence band of a InAs/InxGa1-xAs multi QW structure where x-0.5. [5] State whether electron and hole confinement is within the InAs or InGaAs layers, and hence deduce what type of structure/band alignment this is. Suggest why this structure might be difficult to grow experimentally. (b) A Gao.47lno.53As quantum well laser is designed to emit at 1.55um at room temperature...
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