assume in a silicon sample fermi level is 0.35eV below the instrinsic level ei. find the...
assume in a silicon sample fermi level is
0.35eV below the instrinsic level ei. find the carrier for both
majority
Homework Answers
I have used some standard formula which is given in millman(electronic device and circuits ) book, you can refer that like shift in fermi level, majority carrier concentration, minority carrier concentration.
To solve such type of problem you have to remember the
formulas.
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assume in a silicon sample fermi level is
0.35eV below the instrinsic level ei. find the...
7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium,...
7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium, gallium arsenide, and indium arsenide. Use the effective density of states values from problem 5. 8. a. Draw a band diagram for silicon doped 107/cmp-type and label the band gap and the position of the Fermi level. b. Draw a band diagram for gallium arsenide doped 10/cmn-type and label the band gap and the position of the Fermi level. c. Draw a band diagram...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T =...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
Consider a sample of silicon at 300 K in which the Fermi level is found 0.22...
Consider a sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. a) What type of semiconductor is this sample? b) Sketch the band diagram, labelling Ev, E., E. EF, E. – EF, EF - Ec, and Ea or Ed as applicable. c) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium?
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is...
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300&#...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b)
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level...
The Fermi energy level in a silicon sample at T = 300 K is as (Eg/4)...
The Fermi energy level in a silicon sample at T = 300 K is as (Eg/4) close to the top of the valence band. (a) Is the material n type or p type? (b) Calculate the values of n0 and p0.
(a) Assuming that the Fermi level is at the midgap in the intrinsic silicon, calculate the...
(a) Assuming that the Fermi level is at the midgap in the intrinsic silicon, calculate the probability of finding an electron at the bottom of the conduction band (E=Ec) for three different temperatures: 0K, 20C, 100C? (b) How are these probabilities related to the probabilities of finding a hole at E=Ev, which is the top of the valence band? (c) A sample of silicon is doped with 1016 cm-3 of arsenic and 3x1016 cm-3 of boron. Calculate n, p, and...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for...
Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for 1 x 10^15 boron atoms/cm^3 and (b) for 3 x 10^16 boron atoms/cm^3 and 2/9 x 10^16 arsenic atoms/cm^3. The first two are acceptor concentrations, and the third one is an donor concentration.
How far is the Fermi level above the intrinsic Fermi level in meV in a piece...
How far is the Fermi level above the intrinsic Fermi level in meV in a piece of silicon at 300°K that is doped with phosphorus at a concentration of 3.2 x 10^17/cm^3? Assume kT = 26meV.
Please help me 1. In degenerate p-type silicon, a. The Fermi energy is above the valence...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
7. Find the position of the intrinsic Fermi level with respect to Emidgap for silicon, germanium, gallium arsenide, and indium arsenide. Use the effective density of states values from problem 5. 8. a. Draw a band diagram for silicon doped 107/cmp-type and label the band gap and the position of the Fermi level. b. Draw a band diagram for gallium arsenide doped 10/cmn-type and label the band gap and the position of the Fermi level. c. Draw a band diagram...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b) P1. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be...
Consider a sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. a) What type of semiconductor is this sample? b) Sketch the band diagram, labelling Ev, E., E. EF, E. – EF, EF - Ec, and Ea or Ed as applicable. c) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium?
A silicon PN junction diode is constructed using N-type silicon in which the Fermi level is 100 meV below the conduction band edge and P-type silicon in which the Fermi level is 120 meV above the valence band edge a) What are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? b) What is the value of the built-in voltage? c) Determine the width of the depletion region on both sides of the junction...
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level in silicon at T = 300'K that is doped with phosphors atoms at a concentration of 1015 cm. (b) Repeat (a) if the silicon is doped with boron atoms at a concentration of 10'5 cm3. (c) Calculate the electron concentration in the silicon for parts (a) and (b)
P3. (a) Determine the position of the Fermi level with respect to the intrinsic Fermi level...
Please help me
1. In degenerate p-type silicon, a. The Fermi energy is above the valence energy and below the intrinsic Fermi energy b. The Fermi energy is below the valence energy c. The Fermi energy is above the conduction energy d. The Fermi energy is below the conduction energy and above the intrinsic Fermi energy 2. A semiconductor has No 5X 1010 cm3 and N-2X 1018 cm2. It is a. b. C. d. N-type and electrons are the majority...
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