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For the circuit shown below, the transistor parameters are given as VTP - 0.8 V and...
33 EXERCISE PROBLEM Ex 3.6: Consider the circuit shown in Figure 3.30. The nominal transistor parameters are Vrp = -0.30 V and K, = 120 u A/V2. (a) Calculate Vsg, Ip. and VSD. (b) Determine the variation in Ip if the threshold voltage varies by £5 percent. (Ans. (a) Vsg = 1.631 V, Ip = 0.2126 mA, VSD = 3.295 V; (b) 0.2091 < Ip < 0.2160 mA) +2.2 V R = > Rs = 6k92 the 255 ke 3...
For the transistor in the circuit shown below, VTN = 0.8 V, lambda = 0, and Kn = 0.25 mA/V2. Determine the small-signal voltage gain of the circuit. pр +5 V DD R 5 k R,-600 k Cci Cc2 R, 400 k T
In the circuit in Figure P3.26, the transistor parameters are VTN = 0.8 V and Kn = 0.5 mA/V2. Calculate VGS, ID, and VDS.
help me please subscription 5. The PMOS transistor has Vtp=-1 V. If the voltages of three terminals are: Vg=2 V, Vs=5v, Vd=3.5V, then the transistor is operated in a) Cut off region b) Triode region c) Saturation region d) Unknown 6. The voltage transfer characteristic of a CMOS inverter is shown in Fig. 4. Threshold voltages Vrn = |Vpl = 0.5V. If Vpo=5V and the input v=3V, then Saved to this PC a) Both PMOS and NMOS in triode region...
Q5 Figure 4 is a common-source circuit. The PMOS transistor parameters are VTP = -0.6V, Kp = 1mA/V and 1 = 0. Assume the transistor is biased in saturation such that Ipo = 0.25mA and Vspo = 1.5V. a) Find Rs and RD- b) Draw the small signal ac equivalent circuit. c) Determine the circuit's input resistance (R.), output resistance (Rour) and small signal voltage gain (Av) Figure 4 = 100k2 RO
18.2 V, V-1.3 V and R, 1.6 Calculate Vds for the following circuit given that V kohms. Assume that the transistor threshold voltage is 0.8 volts and K is 2.51 mA/V. Hint: The transistor is in the saturation (constant current) region. +Vs Id ds 18.2 V, V-1.3 V and R, 1.6 Calculate Vds for the following circuit given that V kohms. Assume that the transistor threshold voltage is 0.8 volts and K is 2.51 mA/V. Hint: The transistor is in...
Problem: In the circuit shown in Figure 1, Vee = 1.2 V, Vcc = 20 V, Rp = 60 kN, Rc = 2 k. The input signal is a sinusoidal voltage given by Vin(t) = 0.2 sin(2000 ) V. The input and output characteristics of the transistor are provided on Page 2. (1) Find Ig, Ic and Vce. (30 points) Hint: Use the load line method. (Vor.) and (Vce: 1c) are the operating points of the transistor in the input...
Problem#1 Consider the circuit. The circuit parameters are Vpp = 3.3 V, RD = 8 k1, R, = 240 k12, R2 = 60 k22, and Rs = 2 k12. The transistor parameters are Vrn = 0.4 V, k', = 100 MA/V?, W/L = 80, and 1= 0.02 V!. (a) Determine the quiescent values Ipo and Vpsp. Ans: 0.27 mA; 1.14 V. (b) Find the small-signal parameters g.m and ro. Ans: 2.078 mA/V; 185 62. (e) Determine the small-signal voltage gain...
URGENT The NMOS in the shown figure has Vt = 0.8V, kn = 5 mA/V2, and VA = 40 V. The circuit also has Vdd = 5V, VSS = -5V, RG = RLD = 1 M2, and RLS = 0 A. [3 marks] Neglecting the channel length modulation effect, find the value of Rs so that the NMOS operates in saturation with Ip = 0.4 mA B. [2 marks] Neglecting the channel length modulation effect, find the largest possible value...
3. A circuit for an n-channel depletion MOSFET is shown in below. The transistor parameters are V 25 V and lpss - 10 mA. Calculate the quiescent values of ID, Vps, and VGS Assume R 1 MO, R2 = 60 k 2 and Rolk. -- + 18V < R, ΟΜΩ SND 3 R 3600k