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Question 6 Determine lp and Vas for the JFET with voltage-divider bias in figure 6, given...
5 Determine lo and Vas for the JFET with volage divder bas in Fiqure 5, gven...
5 Determine lo and Vas for the JFET with volage divder bas in Fiqure 5, gven that for this particular JFET the parameter values are such that Vo TV (B marks) Vco +12 V RD 68 MD 3.3 k RS R 10 MO 22 k Figure 5 6 Graphically determine the Q-point for the JFET crcut in Fqure Ba usng the trarsfer characteristic curve in Fiqure & (8 marks) Inss 5 mA Von +6 V RD 820 Rs 330 Ro...
؟! ELE-2403 26. Given that the drain-to-ground voltage in Figure Electronics ADWC-HCT le drain-to-ground voltage in...
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ELE-2403 26. Given that the drain-to-ground voltage in Figure Electronics ADWC-HCT le drain-to-ground voltage in Figure 8-71 is 5 V, determine the Q-point of the circuit. VOD +9 V 322 MA 27. Find the Q-point values for the JFET with voltage-divider bias in Figure 8-72. 'oss = 5 mA 3R 3RD 3.3 MO 1.8 WI Vas -4V Vasco
(25pts) 4. Design a four resistors n-Channel JFET bias circuit for the following specifications: Ip =...
(25pts) 4. Design a four resistors n-Channel JFET bias circuit for the following specifications: Ip = 3mA, Vps = 7V. Assume: VDD = 14 V, Ipss = 6mA, Vp =- 5V and I = 0 Find Vas and all resistors values. Draw the designed circuit with all calculated values.
2. (25 pts) For the JFET configuration shown below using the parameters given V +16.0v R1...
2. (25 pts) For the JFET configuration shown below using the parameters given V +16.0v R1 RD Rp 2.4 k2 Rs 1.5 k R,- 2.1 M2 R2-270 kΩ Ioss 8.0 MA IG- 0 A C1 Vo Vin R2 RS cs a) Sketch the transfer characteristics of the device. b) On the same graph, sketch the bias line equation. c) Determine Ipo- d) Determine Voso- e) Determine Vos lpo Vas
a) Determine the DC bias voltage Vce and the current Ic for the voltage divider configuration...
a) Determine the DC bias voltage Vce and the current Ic for the voltage divider configuration in Fig. 11. [4.0 marks] +22 V 10 k92 39k92 10 F HE 10 uF ti VE B = 100 3.9 k2 50uF Figure 11 b) Provide the construction diagram of n-channel JFET ii. n-channel depletion type MOSFET iii. n-channel Enhancement type MOSFET i. [3.0 marks) c) Describe the operation of an NPN transistor in the common-emitter (CE) configuration with aid of input and...
ECT2601/101/3/2019 TRANSISTOR BIAS CIRCUITS Question 2 Find lo. Vcn qnd V for the pnp transistor in...
ECT2601/101/3/2019 TRANSISTOR BIAS CIRCUITS Question 2 Find lo. Vcn qnd V for the pnp transistor in figure 2 using the Thevenins Theorem applied o voltage divider Bias. (12) [12) VCC 12V IC Rc 3kQ R1 vc 04 2N5684G BDC 150 VB RE R2 30k0 1
C- Amplifier: Consider figure 3. This circuit uses the JFET to amplify the input signal voltage F...
C- Amplifier: Consider figure 3. This circuit uses the JFET to amplify the input signal voltage First the dc operation must be set. Use equation 1 and your previous data to calculate the value of Vas required to give I-0.5 mA. Determine the source resistance Rs needed to set this bias. Set up the circuit of figure 3 with your calculated value of Rs. Measure Vo and Vs to determine if your operating conditions are correct. Apply an input voltage...
3. Design a n-channel JFET C-S amplifier circuit for the following specifications Voltage Gain input resistance...
3. Design a n-channel JFET C-S amplifier circuit for the following specifications Voltage Gain input resistance Ri-100kΩ Load resistanceR2k2 Given supply voltage VDD 20V Αν--10 Rss is fully bypassed The input source resistance Rs 02, Ipss-8mA and Vp4V Assume RD and R1 but must find R2 and RSS using the given specifications. Find the DC Operating Points values (VGs, ID and VDs) Draw the actual circuit and its ac equivalent circuit
(a) Explain physically how ap-n junction functions as a rectifier diode. (5 marks) Figure Q5(b) shows...
(a) Explain physically how ap-n junction functions as a rectifier diode. (5 marks) Figure Q5(b) shows a Voltage divider bias circuit for a BJT. Given that; Vcc 18 V, BDC (b) 120. 18 V 3.3 kQ C2 39.0 kO 10 μF C1 B 120 10 μΕ 1.0 kQ 8.2 kQ Figure Q5(b) Voltage divider bias configuration of BJT Calculate Ic and VCE using exact method. (i) (5 marks) Repeat the calculation of Ic and VCE using approximate method. (ii) (3...
(25pts) 3. For a four resistors n-channel JFET, find the operating points (Vas, ID, and Vos)....
(25pts) 3. For a four resistors n-channel JFET, find the operating points (Vas, ID, and Vos). Assume Ipss = 5mA, Vp = -4.5V and Io0 Given: Vpp = 12 V, R1 = 2M2, R2 = 1.5M2, Rp = 6 k2, Rss = 4k12
5 Determine lo and Vas for the JFET with volage divder bas in Fiqure 5, gven that for this particular JFET the parameter values are such that Vo TV (B marks) Vco +12 V RD 68 MD 3.3 k RS R 10 MO 22 k Figure 5 6 Graphically determine the Q-point for the JFET crcut in Fqure Ba usng the trarsfer characteristic curve in Fiqure & (8 marks) Inss 5 mA Von +6 V RD 820 Rs 330 Ro...
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ELE-2403 26. Given that the drain-to-ground voltage in Figure Electronics ADWC-HCT le drain-to-ground voltage in Figure 8-71 is 5 V, determine the Q-point of the circuit. VOD +9 V 322 MA 27. Find the Q-point values for the JFET with voltage-divider bias in Figure 8-72. 'oss = 5 mA 3R 3RD 3.3 MO 1.8 WI Vas -4V Vasco
(25pts) 4. Design a four resistors n-Channel JFET bias circuit for the following specifications: Ip = 3mA, Vps = 7V. Assume: VDD = 14 V, Ipss = 6mA, Vp =- 5V and I = 0 Find Vas and all resistors values. Draw the designed circuit with all calculated values.
2. (25 pts) For the JFET configuration shown below using the parameters given V +16.0v R1 RD Rp 2.4 k2 Rs 1.5 k R,- 2.1 M2 R2-270 kΩ Ioss 8.0 MA IG- 0 A C1 Vo Vin R2 RS cs a) Sketch the transfer characteristics of the device. b) On the same graph, sketch the bias line equation. c) Determine Ipo- d) Determine Voso- e) Determine Vos lpo Vas
a) Determine the DC bias voltage Vce and the current Ic for the voltage divider configuration in Fig. 11. [4.0 marks] +22 V 10 k92 39k92 10 F HE 10 uF ti VE B = 100 3.9 k2 50uF Figure 11 b) Provide the construction diagram of n-channel JFET ii. n-channel depletion type MOSFET iii. n-channel Enhancement type MOSFET i. [3.0 marks) c) Describe the operation of an NPN transistor in the common-emitter (CE) configuration with aid of input and...
ECT2601/101/3/2019 TRANSISTOR BIAS CIRCUITS Question 2 Find lo. Vcn qnd V for the pnp transistor in figure 2 using the Thevenins Theorem applied o voltage divider Bias. (12) [12) VCC 12V IC Rc 3kQ R1 vc 04 2N5684G BDC 150 VB RE R2 30k0 1
C- Amplifier: Consider figure 3. This circuit uses the JFET to amplify the input signal voltage First the dc operation must be set. Use equation 1 and your previous data to calculate the value of Vas required to give I-0.5 mA. Determine the source resistance Rs needed to set this bias. Set up the circuit of figure 3 with your calculated value of Rs. Measure Vo and Vs to determine if your operating conditions are correct. Apply an input voltage...
3. Design a n-channel JFET C-S amplifier circuit for the following specifications Voltage Gain input resistance Ri-100kΩ Load resistanceR2k2 Given supply voltage VDD 20V Αν--10 Rss is fully bypassed The input source resistance Rs 02, Ipss-8mA and Vp4V Assume RD and R1 but must find R2 and RSS using the given specifications. Find the DC Operating Points values (VGs, ID and VDs) Draw the actual circuit and its ac equivalent circuit
(a) Explain physically how ap-n junction functions as a rectifier diode. (5 marks) Figure Q5(b) shows a Voltage divider bias circuit for a BJT. Given that; Vcc 18 V, BDC (b) 120. 18 V 3.3 kQ C2 39.0 kO 10 μF C1 B 120 10 μΕ 1.0 kQ 8.2 kQ Figure Q5(b) Voltage divider bias configuration of BJT Calculate Ic and VCE using exact method. (i) (5 marks) Repeat the calculation of Ic and VCE using approximate method. (ii) (3...
(25pts) 3. For a four resistors n-channel JFET, find the operating points (Vas, ID, and Vos). Assume Ipss = 5mA, Vp = -4.5V and Io0 Given: Vpp = 12 V, R1 = 2M2, R2 = 1.5M2, Rp = 6 k2, Rss = 4k12
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