3 3. a) A NOR gate in Figure Q3.1 consists of n-MOSFET drivers (Mpi and Mp3)...
Voo=5V GND V An n-channel MOSFET circuit shown in the figure is fed by a gate voltage Va and Vod=5V. Drain resistance Rp=2k12. The p-type substrate of the MOSFET is doped by 10" acceptor ions. The effective electron mobility in the channel when it is created is 820cm/V-s. The oxide thickness is xq=10nm with dielectric constant Ko=3.9. Also the channel length L=500nm and the depth of the device is, Z=0.4um. a. Calculate the threshold voltage to create n-channel b. Calculate...
3. Now, consider the MOSFET DA on Figure P1.3. Transistors Q5 and Q6 are n-channel MOSFETs with threshold voltages V,-V,-V-2 V and transconductance parameters k,-k,- k- 100 m/y2 Let lc, In, and Is, be, respectively, the gate, drain, and source currents of Q5. Moreover, let aIn, and Is, be, respectively, the gate, drain, and source currents of Q6. DC analysis: Find the operating points (Qpoine)of both Q5 and Q6. AC analysis: (You can use the analysis by symmetry technique) vDifferential...
A common source amplifier circuit based on a single n-channel MOSFET is shown in Figure 4b. Assume that the transconductance gm-60 mS (equivalent to mA/ V) and drain source resistance, os, is so large it may be neglected. 0) Calculate the open circuit voltage gain Av Yout/ Vis. i) The amplifier has a load of 10 k2. Determine the current gain Va. = 12 V 150k 4k3 Vout Vin 200k GND = 0 V Figure 4b a) State the name...
Problem 3: Design Problem On Figure P3a, you have a Common Source (CS) n-channel MOSFET amplifier. Notice the absence of a source resistor Rsig and load resistor R. If we know how the present amplifier (the one on Figure P3a) behaves without Rsig and RL, we can infer its behaviors if Rsig and R were to be added. design the amplifier circuit on Figure P3a, i.e., you have to find appropriate values for RGj You are to RG,, RD, and...