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I'm doing a problem for my semiconductors class where I'm to find the electron and hole...

I'm doing a problem for my semiconductors class where I'm to find the electron and hole concentration of silicon samples at T= 300K. The confusion comes when using ni (intrisic carrier concentration) in one textbook it says that the intrisic carrier concentration is 9.65*10^9/cm^3 and in another textbook it says that the intrisic carrier concentration of silicon at 300K is 1.5*10^10/cm3. So which one is it?? What value should I use and why? What is the difference between them and in what scenarios should I used them in. Please explain in detail!!

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Answer :- This has been a recurring problem in the literature. The actual value is 9.65 x 109 cm-3. For simplicity it is also used as 1010 cm-3. The value 1.5*1010 cm-3 has been used in book from "Donald Neamen's book "Semiconductor Physics and Devices". But recent researches by Sproul and Green (1990) and Altermatt (2003) has proved that correct value is 9.65 x 109 cm-3.

Generally in question the value of ni is also given and same value must be used to solve the problem.

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