Design a voltage divider bias circuit to have a Q point of Ic = 10mA and Vce = 10V, with a tolerance of ±10%. Use a 2N3904 NPN transistor and a 20 V DC source to bias the circuit.
Design a voltage divider bias circuit to have a Q point of Ic = 10mA and...
design a Voltage Divider Circuit that has the following – VCC= 12 V IC=2.5 mA VCE = 6 V For the design, you will use a 2n3904 npn transistor. Assume a β of 150. Determine values for RC, RE, R1, and R2
a) Determine the DC bias voltage Vce and the current Ic for the voltage divider configuration in Fig. 11. [4.0 marks] +22 V 10 k92 39k92 10 F HE 10 uF ti VE B = 100 3.9 k2 50uF Figure 11 b) Provide the construction diagram of n-channel JFET ii. n-channel depletion type MOSFET iii. n-channel Enhancement type MOSFET i. [3.0 marks) c) Describe the operation of an NPN transistor in the common-emitter (CE) configuration with aid of input and...
Solve fore Vb, Vc, Ib, Ic
hfe = 200
D. Voltage-divider Bias +10V R = 10k 2 < Rc = 3.9k22 2N3904 } RE = 1622 3R2 =2.2K12 = Figure 5.4
Question 1 (4 points) Voc 3 Rc RB13 The voltage-divider bias circuit shown has Rc = 2 k12, RE = 400 12, RB1 = 300 k22, RB2 = 100 ks and Vcc = 25 V. Assume that VBE = 0.7 V and B = 90. Determine the Q- point (Ic and VCE) for the bias circuit. OVCE = 5.91 V Ic = 3.09 mA OVCE = 12.07 V Ic = 2.40 mA O VCE = 14.22 V Ic = 4.48...
8. Design the DC bias circuit of a voltage-divider biased common-emitter amplifier (12 points) with the specification given below. Center Q-point, Vcc- 16V, Ico-2.2mA.
Determine the Q-point components of this circuit. Use APPROXIMATE analysis. Given: A voltage-divider biasing circuit with Vcc 14V, Initial Beta 80, Final Beta Determine VB. VE. lE. VCE VB at Beta of 80- VB at Beta of 120 Use 2 decimal places. 120 V, VE at Beta of 80- V, lE at Beta of 80- mA, VCE at Beta of 80- V, VE at Beta of 120 V, lE at Beta of 120 mA, VCE at Beta of 120-
1. Draw a Voltage Divider biased transistor circuit. Sketch the Load Line if, Vcc 18V, Rc-1.2K(2, and RE-600Ω. 3. Find ic, VCE and mode of operation, if RBI-30.2 and RB2-10 ΚΩ, for β-150 4. Determine RB2, for Q to be on center of LL. Verify, Ic, VcE and mode of operation 5. Find mode of operation, Ic, and VcE, if: a. RBi is Short b. RBi is Open c. RB2 is Short. d. RB2 is Short Mode of operation 4...
The component values for the npn-transistor amplifier circuit are R = 665 Q, Vcc= 20 V, VB= 2.4 V, and RB= 85k a) The graphon the last page shows the characteristics for the transistor in the above circuit Construct the load line for th is transistor circuit and draw it into the IC vs. VCE graph. Briefly state how you determine the load line. b) Determine the base current, assuming that the transistor is made of silicon. c) Determine the...
Experiment 2: Good biasing Set up the circuit with R2 12 k2, R RE 1 k, and Vcc 15 V 39 k2, Rc = 2 k?. Circuit Analysis: Compute Ic, I, and VCE PSpice Simulation: a) Simulate the circuit with PSpice (bias point details only) and compare values of Ic, IB, VCE, and VBE from PSpice simulations with your analytical calculations. b) Rerun your PSpice simulations for temperatures of 0 and 60°C. Make a table of Ic IB, VCE, and...
Please carry out prelab design questions
Section Discrete Devices LAB 11 JFET BIAS DESIGN Objective: The objective of this laboratory is to design a JFET amplifier for specific DC operating point, employing self-bias and voltage-divider bias configurations, and verify the accuracy of the design. Prelab: Carry out the following on a separate sheet of paper. Show your work and box answers. 1. Design the self-bias circuit of Figure 11(a) for a centered operating point at /p=4 mA and Vos =...