Calculate the cutoff frequency of a silicon JFET with the following parameters:
µn=1000 cm2/V·s
a = 0.6µm
Nd = 1016 cm-3
L = 5µm
Calculate the cutoff frequency of a silicon JFET with the following parameters: µn=1000 cm2/V·s a =...
Calculate the cutoff frequency of a silicon JFET with the following parameters: µn=1000 cm2/V·s a = 0.6µm Nd = 1016 cm-3 L = 5µm
Calculate the current ID in an n-channel MOSFET with following parameters: VTH=0.4 V, W=20 µm, L=0.8 µm, µn=650 cm2 /V·s, Cox=0.17×10-6 F/cm2 . Determine the current when the transistor is biased in the saturation region for VGS=0.8 V.
A silicon pn junction at T = 300 K has the following parameters: Na-5 1016 cm-?, N,-1 1016 cm-3, D.-25 cm3/s, D.-10 cm2/s, ?,0-5 x 10-7 s, and To 1 X 10-7 s. The cross-sectional area is A 10-3 cm2 and the forward- bias voltage is V,-0.625 V. Calculate the (a) minority electron diffusion cur- rent at the space charge edge, (b) minority hole diffusion current at the space charge edge, and (c) total current in the pn junction diode.
1. Consider a p*n silicon diode at T-300 K with doping concentrations of N 10 cin and N-101 cm-3. The minority carier hole diffusion coefficient is D 12 cm2/s and the minority carrier hole lifetime is po 10-7 s. The cross sectional area is A 10- cm2. Calculate the reverse saturation current and the diode current at a forward-bias voltage of 0.50v A germanium p* n diode at T-300 K has the following parameters: Na 108 cm-3 N,--1016 cm", ,...
The doping and geometric parameters of a P–N junction diode are: - ND = 10^20 cm−3, Wcathode = 1 μm <<Lp, - NA = 5 × 10^15 cm−3, Wanode = 10 μm <<Ln, - Junction area AJ = 500 × 500 μm2. Calculate the reverse biasing current IS, and then use this result to obtain the forward voltage that corresponds to a current of 100 mA, if the semiconductor material is: (a) Si (μn = 1450 cm2/V · s, μp...
Unless otherwise indicated, assume ni = 1010 cm–3, Eg = 1.1 eV, µn = 1000 cm2/V.s, µp = 250 cm2/V.s, εr = 12, ε0 = 8.85×10–14 F/cm, KT/q = 26-mV at 300° Kelvin, q = 1.6×10–19 C, and k = 8.62×10–5. Problem 1 In a particular semiconductor, the probability of occupying a state of an energy kT above Ec is e–10. Determine the position of the Fermi level with respect to Ec in terms of kT. Problem 2 Determine the...
6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10 cm2. De-21 cm/sec, D-10 cm/sec, G 10 cmsn-1010 cm-3, Es-1.05 101 F/em. (20 pts). Assume an ideal solar cell at 300K. IV characteristics can be given by J Js ekT 1)-Isc under the illumination. (20 pts) (a) Calculate the Jsc (15 pts) 6. Assume that an ideal silicon p-njunction has ND-10'scrn". N-1016 cm-3, t/tel 0%, and a device area of 1.2x10...
A silicon photoconductive photoconductor maintained at room temperature, has the following dimensions : length=5 mm, width=0.5 mm, and height = 0.5 mm. A voltage of 2V is applied along the length of the photoconductor. Parameters for Silicon at room temperature : µn = 1,350 cm2/volt-sec µp = 850 cm2/volt-sec ni = 1 x 1010 /cm3 Calculate the dark current. The photoconductor is next irradiated with a green LED (λ = 500 nm) with 100 mW/cm3 uniform optical power all across the...
(a) Assuming that the Fermi level is at the midgap in the intrinsic silicon, calculate the probability of finding an electron at the bottom of the conduction band (E=Ec) for three different temperatures: 0K, 20C, 100C? (b) How are these probabilities related to the probabilities of finding a hole at E=Ev, which is the top of the valence band? (c) A sample of silicon is doped with 1016 cm-3 of arsenic and 3x1016 cm-3 of boron. Calculate n, p, and...
The mobility values of electrons and holes in a silicon sample are 1500 cm2/Vs and 500 cm2/Vs, respectively. Calculate the resistivity of the intrinsic semiconductor. The semiconductor is then doped by phosphorus to concentration of 1×1017 cm-3. Calculate the resistivity of the extrinsic semiconductor. Explain why the conductivity is improved in the latter case. Is this a p-type or n-type semiconductor? The intrinsic carrier concentration in silicon is 1.45×1010 cm-3. (10)