Design a CMOS Inverter and derive (W/L)p as a function of (W/L)n.
(40 p). a) Design a CMOS reference symmetrical inverter to provide a delay of 2 ns when driving a lpf capacitor load and V DD = 2.5V if K, =1004A/V2, K , = 4041A/V?, V.x = Vzx| = 0.5V b) Using this reference inverter, design the CMOS logic gate for function Y = (A + B)C + DFG c) Find the equivalent W/L for the NMOS network when all transistors are on.
For a CMOS inverter fabricated in a 0.18um process with the values given: Value Parameter (W/L)p (W/L)n 1.5 10fF 1.8V Vdd Use the equivalent resistance approach. What is the inverter propagation delay from low to high (tpLH)? Give your answer in pSec, number form to 2 decimal place, no units, no unit prefixes, no commas. Example: 10pS>Answer Given: 10.00 For a CMOS inverter fabricated in a 0.18um process with the values given: Value Parameter (W/L)p (W/L)n 1.5 10fF 1.8V Vdd...
6. Synthesize a CMOS logic circuit that implements the Boolean function and determin transistor W/L ratios for each transistor. Assume that for the basic inverter (W/L)n -1.5, (W/L)p-5. (10 points)
A CMOS inverter has a load capacitance of 50fF. The inverter has a propagation delay of 60ps. Determine the factor that (W/L)n and (W/L)p should be increased so that the propagation delay reduces to 30ps.
a) Design a CMOS logic gate that implements the logic function Y = AB+(CD+E) if the reference inverter has (WIL)n = 2/1, (W/L)= 5/1 b) What is the equivalent W/L for the NMOS section when all transistors are ON?
3. Design the CMOS gate that implements the following function OUT- AB (a) Draw the circuit schematic without any output inverter. (b) Size all the transistors in this circuit such that TR 3Tr. The minimum geometry is W. 3. Design the CMOS gate that implements the following function OUT- AB (a) Draw the circuit schematic without any output inverter. (b) Size all the transistors in this circuit such that TR 3Tr. The minimum geometry is W.
Section 14.3: The CMOS Inverter 14.31 Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VppV, VVp 0.35 V, and ?? Car-2.5MyCar-470 ??/V'. In addition, QN and QP have L = 65 nm and (WIL), 1.5. (a) Find W, that results in V Vpp/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of Vo, VoL ,VIL, NM,, and NM (c) For the matched...
7.83. Design a CMOS logic gate that implements the logic function Y-ABC+ DE) and is twice as fast as the CMOS reference inverter when loaded by a capacitance of 2C
14.31 Consider a CMOS inverter fabricated in a 65-nm CMOS process for which Vpp = 1V, V = - = 0.35 V, and u C = 2.54 C = 470 HA/V'. In addition, ex and Q, have L = 65 nm and (WIL), = 1.5. (a) Find W that results in V = V 2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of Vow, VOL...
14.31 Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VopV, V 0.35 v and μη C ,-2.5μ, car-470 μΑ/V2. In addition, QN and QP have L 65 nm and (WIL), = 1.5 (a) Find W, that results in DD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of Vou, Vou» Vi, Vi, NM1, and NMH IH IL' (c) For the matched case...