For a BJT amplifier where the collector is used as the output, it is usually a...
For a BJT amplifier where the collector is used as the output, it is usually a good idea to bias the collector at the same voltage as the base in order to get a symmetric output voltage swing.
Select one:
True
False
Homework Answers
It is false for maximum symmetrical swing VCE must be zero volts so go with flase option
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For a BJT amplifier where the collector is used as the output,
it is usually a...
Part a and b Design a BJT differential amplifier to provide an output voltage of Vod-0.5...
Part a and b
Design a BJT differential amplifier to provide an output voltage of Vod-0.5 V when the input differential voltage Vid-5 mV. Assume ?-100 and use a current source of mA and Vcc-5 V. Design the amplifier circuit assuming that the transistor currents are equal Design the amplifier circuit without making the assumption of part a. Model your BJT differential amplifier design using LTspice and verify the bias point and gain of the amplifier. Use an ideal current...
D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design...
D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of I mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use + 10-V and-5-V power supplies. Cc Rc UC RB RE
4. Consider the BJT cascade amplifier shown below Vcc 18V R1 3.3ko 15uF r Vo RL...
4. Consider the BJT cascade amplifier shown below Vcc 18V R1 3.3ko 15uF r Vo RL B 150 Rsa 500? 56k? Vi B 150 C1 CE 2.2k? a) Find the DC collector current (approximately the same in both transistors). b) Find the input impedance, output impedance, and no-load voltage gain. c) Find the Av, Avs, and Ai d) Estimate the lower cutoff frequency e) Why does this amplifier have better high-frequency performance thana common-emitter built using the same type of...
please answer this ASAP Answer the following questions for the below BJT amplifier circuit. Assume capacitors...
please answer this ASAP
Answer the following questions for the below BJT amplifier circuit. Assume capacitors are short in the signal circuit. Use Vr 25 mV,B = 100, Vpo = 0.7 V, and Ignore the early effect in the bias and signal circuits Find the Bias parameters of the amplifier circuit a) b) Find the small signal parameters of the amplifier. c) Draw the small signal equivalent circuit. Find the open loop voltage gain (Ayo), voltage gain (A,), total circuit...
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 a...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
A CE amplifier utilizes a BJT with β = 100 biased at IC = 0.5 mA;...
A CE amplifier utilizes a BJT with β = 100 biased at IC = 0.5 mA; it has a collector resistance RC = 10 kΩ. Find Rin, Ro, and Avo. If the amplifier is fed with a signal source having a resistance of 10 kΩ, and a load resistance RL =10 kΩ is connected to the output terminal, find the resulting Av and Gv. If the peak voltage of the sine wave appearing between base and emitter is to be...
Design a BJT amplifier based on the specifications provided in the table below. Your design shoul...
THE STEPS TO DO SO:
Design a BJT amplifier based on the specifications provided in the table below. Your design should be insensitive to β variations, and both the input and the output should be AC coupled as in Fig. 1. Supply Voltage, Vcc Load Resistance, RL Transistor's Current Gain, β Relative Variation of lc for VBE-0.7 ± 0.1 V 0-to-Peak Output Swing, Vo Voltage Gain, A Input Resistance, R THD for 5kHz IV (0-to-peak) Sine Wave Output Voltage, V。S5%...
i just need help with B, C, D 3) (24 pts) The BJT amplifier shown below....
i just need help with B, C, D
3) (24 pts) The BJT amplifier shown below. Please answer the following questions. Consider that B=150 VBE=0.75 V and VT-25mV a) What type of amplifier is this? (Select One) CE CE with RE CB b) Find the DC collector current Ic c) Find the transconductance gain gm d) Find the internal small signal voltage gain Au e) Find the input resistance of the small signal amplifier 1) Find the output resistance of...
Avec Úvo SRE L V II. (5pt) Consider the above-right common-collector or emitter-follower BJT amplifier circuit....
Avec Úvo SRE L V II. (5pt) Consider the above-right common-collector or emitter-follower BJT amplifier circuit. Given: ß= 100, RE = 10 k1, Vcc = 20 V, RB = 5 k1, R1 = 10 kl, and Ry = 2 k1. (a) (1pt) Find the Q-point, i.e. Ibo, Ico, and VCEO; (b) (1pt) draw the small-signal equivalent circuit assuming that the capacitors (C, and Cy) are short circuits for the small signal; (c) (1pt) solve for the voltage gain, Av; (d)...
Can I get help with part g through part r, please? Given the following Common-Emitter Amplifier...
Can I get help with part g through part r, please?
Given the following Common-Emitter Amplifier with Voltage-Divider Bias: The transistor is a Silicon device with B160 (Beta 160) and transistor r.= 30 kn: 20 V 34.7k LAL = Vou 35.10 31.1k LRE $3900 03 - Find the following quantities in parts a through where means Quiescent DC): a) Thevenin Voltage and Thevenin Resistance Re b) Base Current la Collector Current le d) Emitter Current le e) Transistor Collector-Emitter Quiescent...
Part a and b
Design a BJT differential amplifier to provide an output voltage of Vod-0.5 V when the input differential voltage Vid-5 mV. Assume ?-100 and use a current source of mA and Vcc-5 V. Design the amplifier circuit assuming that the transistor currents are equal Design the amplifier circuit without making the assumption of part a. Model your BJT differential amplifier design using LTspice and verify the bias point and gain of the amplifier. Use an ideal current...
D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of I mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use + 10-V and-5-V power supplies. Cc Rc UC RB RE
4. Consider the BJT cascade amplifier shown below Vcc 18V R1 3.3ko 15uF r Vo RL B 150 Rsa 500? 56k? Vi B 150 C1 CE 2.2k? a) Find the DC collector current (approximately the same in both transistors). b) Find the input impedance, output impedance, and no-load voltage gain. c) Find the Av, Avs, and Ai d) Estimate the lower cutoff frequency e) Why does this amplifier have better high-frequency performance thana common-emitter built using the same type of...
please answer this ASAP
Answer the following questions for the below BJT amplifier circuit. Assume capacitors are short in the signal circuit. Use Vr 25 mV,B = 100, Vpo = 0.7 V, and Ignore the early effect in the bias and signal circuits Find the Bias parameters of the amplifier circuit a) b) Find the small signal parameters of the amplifier. c) Draw the small signal equivalent circuit. Find the open loop voltage gain (Ayo), voltage gain (A,), total circuit...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
THE STEPS TO DO SO:
Design a BJT amplifier based on the specifications provided in the table below. Your design should be insensitive to β variations, and both the input and the output should be AC coupled as in Fig. 1. Supply Voltage, Vcc Load Resistance, RL Transistor's Current Gain, β Relative Variation of lc for VBE-0.7 ± 0.1 V 0-to-Peak Output Swing, Vo Voltage Gain, A Input Resistance, R THD for 5kHz IV (0-to-peak) Sine Wave Output Voltage, V。S5%...
i just need help with B, C, D
3) (24 pts) The BJT amplifier shown below. Please answer the following questions. Consider that B=150 VBE=0.75 V and VT-25mV a) What type of amplifier is this? (Select One) CE CE with RE CB b) Find the DC collector current Ic c) Find the transconductance gain gm d) Find the internal small signal voltage gain Au e) Find the input resistance of the small signal amplifier 1) Find the output resistance of...
Avec Úvo SRE L V II. (5pt) Consider the above-right common-collector or emitter-follower BJT amplifier circuit. Given: ß= 100, RE = 10 k1, Vcc = 20 V, RB = 5 k1, R1 = 10 kl, and Ry = 2 k1. (a) (1pt) Find the Q-point, i.e. Ibo, Ico, and VCEO; (b) (1pt) draw the small-signal equivalent circuit assuming that the capacitors (C, and Cy) are short circuits for the small signal; (c) (1pt) solve for the voltage gain, Av; (d)...
Can I get help with part g through part r, please?
Given the following Common-Emitter Amplifier with Voltage-Divider Bias: The transistor is a Silicon device with B160 (Beta 160) and transistor r.= 30 kn: 20 V 34.7k LAL = Vou 35.10 31.1k LRE $3900 03 - Find the following quantities in parts a through where means Quiescent DC): a) Thevenin Voltage and Thevenin Resistance Re b) Base Current la Collector Current le d) Emitter Current le e) Transistor Collector-Emitter Quiescent...
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