A uniformly acceptor-doped silicon wafer at room temperature is illuminated with light at t = 0. Assuming NA = 1016/cm3 , n = 10-6 sec, and a light-induced creation of 1017 electrons and holes per cm3 -sec throughout the semiconductor, what is the simplified MCDE?
A uniformly acceptor-doped silicon wafer at room temperature is illuminated with light at t = 0....
Determine the room temperature carrier concentrations and resistivity for a silicon wafer doped with boron to a concentration of 1015 cm3
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
Silicon at at T-300 K contains acceptor atoms at a concentration of Na-5x10A15 cmA-3. Donor atoms are added forming an n type compensated(counter doped) semiconductor such that the fermi level is 0.215 eV below the conduction band edge 4. a. What concentration of donor atoms were added. b. What were the concentration of holes and electrons before the silicon was counterdoped c. What are the electron and hole concentrations after the silicon was counter doped.
Silicon at at T-300 K...
6. A silicon wafer is doped with donor atoms, N-5x0 cm(bonus question) (a) Determine (Ec-EF), (EF-Ev), (Ep-E) at 300 K. Assume all the donor atoms are ionized. (b) Plot the position of Fermi level (EF) in the bandgap as a function of temperature for 300 Ts700 K. In this temperature range, it can be assumed that all the donor atoms are ionized. (c) Plot the position of Fermi level (Er) in the bandgap as acceptor atoms are added (N.- 104,...
2. A GaAs semiconductor at T 300 K is uniformly doped with NA 1016 cm3 and No 0. The GaAs is illuminated with a light source at t = 0 s, resulting in a uniform generation rate of electron hole pairs g' 1020 cm . The electric field is zero. a) Give the analytic expression for the excess-carrier concentration δn(t) versus the time t>0s b) The steady state excess carrier concentration is found to be on( is the minority carrier...
please answer 7.17, i put 7.10 for reference.
Consider a uniformly doped silicon pn junction with doping concentrations N 2 x 7.10 = 1017 cm3and N = 4 X 1016 cm3. (a) Determine Vhi at T = 300 K. (b) Determine the temperature at which Vhi increases by 2 percent. (Trial and error may have to be used.) 7.17 Consider the pn junction described in Problem 7.10 for T = 300 K. The cross- sectional area of the junction is...
Question 8 Pure silicon at room temperature has an electron number density of about 5 × 1015 m3 and an equal density of holes In the valence band. Suppose that one of every 10° silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and...
A silicon semiconductor material is doped with 3x1015/cm of phosphorous atoms at room temperature (300°K). Given: Electron mobility is 1450 cm2/V-s, Hole mobility is 380 cm?/V-s, Intrinsic carrier concentration (n) of Si at room temperature (300°K) 1.5x 101%cm³. Calculate the conductivity of the material
Excess electrons as minority carriers are extracted from a bar
of p-type silicon having the dimensions shown in Figure 211a. The
bar is uniformly doped with an acceptor concentration Na of 10^17
cm^-e. The excess electron concentration has a profile described
by
211a. Excess electrons as minority carriers are extracted from a bar of p-type silicon having the dimensions shown in Figure 211a. The bar is uniformly doped with an acceptor concentration Na of 10 cm3. The excess electron concentration...
2. The earth is hit by a mysterious ray that momentarily wipes out all minority carriers. Majority carriers are unaffected. Initially in equilibrium and not affected by room light, a uniformly doped silicon wafer sitting on your desk is struck by the ray at time t = 0. The wafer doping is N, = 1016 / cm3, , = 10-6 seconds, and T=300K. What is An at t = 0+? (t = 0+ is an imperceptible fraction of a second...