You are a semiconductor engineer at a factory producing LEDs. You need to design a LED...
You are a semiconductor engineer at a factory producing LEDs. You need to design a LED that would be grown on a GaAs substrate and have an emission wavelength of 0.8 mm. What compound semiconductor would you choose? Indicate roughly the composition. Use a diagram of band-gap energies/emission wavelengths vs. lattice constants
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You are a semiconductor engineer at a factory producing LEDs.
You need to design a LED...
Indium Gallium Arsenide is a compound semiconductor with a controllable composition. It has the chemical formula...
Indium Gallium Arsenide is a compound semiconductor with a controllable composition. It has the chemical formula of InxGa1-xAs. The parameter x can vary between 0 and 1 (0 ≤ x ≤ 1). Irrespective of the value of x, the atomic ratio of (InxGa1-x) to As is 1. The room-temperature bandgap energy of GaAs is 1.39 eV, and that of InAs is 0.33 eV. A. Draw well-labeled, schematic, energy-band diagrams characteristic of GaAs and InAs. B. Calculate the maximum wavelength of...
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