A npn BJT has a B = 110 and a base current of iB = 50 μA.
Calculate the
collector current and the emitter current. Assume operation in the
active region.
Express the results in mA. (4 pts.)
T=300K, Ni=1E10cm-3 1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%] Assuming VBE 0.8 V, calculate the base neutral region width (WB), and confirm whether WB< Ln. (Hint: consider the depletion widths at the base/emitter and base/collector junctions.) (b) [3090] Assuming VBE-0.8 V. calculate lc. IB and IE. Note: use the appended graphs for Ln and Dn BE 50 ?m 50 ?m Emitter Il Base 0.4 um Collector Active base region Nd(Emitter) 1 x 1020...
2. (15 pts) An npn bipolar junction transistor is biased in the forward-active region. The common-base current gain, α 0.95. The input emitter current is IE-4.6 mA. a) Calculate the collector current Ic b) Calculate the common-emitter current gain, B c) Calculate the base current IB IB
answer i-iv please The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
iii. Use the Ebers-Moll model to calculate the collector current of an npn BJT when/B-1 μΑ and a reverse bias of 10 V exists on the base-collector junction. Assume a 0.3, R 10-15 A Fo 3.14x10 A and V 100V. [4 pts.]
Consider the npn BJT with a turn-on voltage V1 = 0.70 V, and a saturation emitter-collector voltage V CE/SAT) = 0.20 V. (a) [20 points) Consider this transistor in a common- emitter circuit (Re = 0). Design this common- emitter circuit to produce the IV (Ic vs. VCE) characteristic and load line (LL) as shown in the graph. Your answers are the following: a drawing of the circuit; the values of Vcc, Rc, VBB, and Ra; and the value for...
1) Calculate the value of the base current IB. (in μA) 2) Calculate the value of the base collector current IC. (In mA) 3) Calculate the value of the collector-emitter voltage VCE. (In V) Required information In the circuit below: RB = 820 kN, Vcc = 12 V, RC = 3 kN2, and Bdc = 100. Note: The transistor is silicon. Vcc w Rc Re Bdc
miz 22 - Apr 14, 2020 Vo=8V on't forget units! For the npn BJT circuit at right, calculate the base current is, collector current ic, emitter current is, and the collector-emitter voltage Vce. The forward current gain for the transistor is Br = 150. κι ΚΩ Vana_MW kr R, 100 k92 VRO i ic= 14702 _ VCE Vcc=6 V 32.2 k 2 R 120 k92 For the npn BJT circuit at right, calculate the value of Br so that the...
8.3 Consider a conventional NPN BJT with uniform doping. The base-emitter junction is forward biased, and the base-collector junction is reverse biased. (a) Qualitatively sketch the energy band diagram. (b) Sketch the minority carrier concentrations in the base, emitter, and collector regions. (c) List all the causes contributing to the base and collector currents. You may neglect thermal recombination-generation currents in the depletion regions.
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward active bias is given in the following questions. On top of the figure, sketch the corresponding new minority carrier concentration when the given condition is changed. (To make the question simple, you may assume the depletion width remains unchanged in all questions. But you have to indicate the new equilibrium minority concentration if they are affected.) 6. a) collector doping is increased by...
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...