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iii. Use the Ebers-Moll model to calculate the collector current of an npn BJT when/B-1 μΑ...
A npn BJT has a B = 110 and a base current of iB = 50...
A npn BJT has a B = 110 and a base current of iB = 50 μA. Calculate the collector current and the emitter current. Assume operation in the active region. Express the results in mA. (4 pts.)
T=300K, Ni=1E10cm-3 1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%]...
T=300K, Ni=1E10cm-3
1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%] Assuming VBE 0.8 V, calculate the base neutral region width (WB), and confirm whether WB< Ln. (Hint: consider the depletion widths at the base/emitter and base/collector junctions.) (b) [3090] Assuming VBE-0.8 V. calculate lc. IB and IE. Note: use the appended graphs for Ln and Dn BE 50 ?m 50 ?m Emitter Il Base 0.4 um Collector Active base region Nd(Emitter) 1 x 1020...
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep ...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward acti...
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward active bias is given in the following questions. On top of the figure, sketch the corresponding new minority carrier concentration when the given condition is changed. (To make the question simple, you may assume the depletion width remains unchanged in all questions. But you have to indicate the new equilibrium minority concentration if they are affected.) 6. a) collector doping is increased by...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping...
Consider a silicon device (which happens to be an npn bipolar transistor) with an emitter doping of 10^17/cm3, a base doping of 8x10^15/cm3 and a collector doping of 2x10^15/cm3. Carefully calculate how the band diagram, charge density, electric field and electrostatic potential as a function of distance for this device changes from the equilibrium case when this bipolar transistor is properly biased to work as an amplifier. In other words, show how the band diagram changes when the emitter-base junction...
question 3 and 4 Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
Please explain part A in details thx! Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 a...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
Design the BJT current mirror shown in Figure 1 to replicate a 1 mA reference current at the coll...
Ignore PSpice Simulation
Design the BJT current mirror shown in Figure 1 to replicate a 1 mA reference current at the collector of 02. Assume a scale current of 6.7 fA, V 74 V, and B-200. 1. Determine Ri such that IREF- 1 mA is the current, Ic, flowing into the collector of Qi 2. Calculate Io/IREF, where Io- Ic2. 3. Simulate the circuit in Figure 1 in PSpice. Use the SEDRA_LIB library for the Q2N3904 and enter the appropriate...
ASAP! Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in...
ASAP!
Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
18. Question 18 (3 points) Consider the BJT amplifier circuit below. Let B=20. Let to=. The...
18.
Question 18 (3 points) Consider the BJT amplifier circuit below. Let B=20. Let to=. The desired collector current is 1.5 mA. Assume VBE = 0.7 V. Use 3 digits of precision in your calculations. (3+7 pts) Use the Thevenin's equivalent circuit technique to determine the value of Rị that sets the base current to the value that produces the desired collector current. 41 Vec w +12 V R Rc 4k92 -Vc 01 10 kg ws
T=300K, Ni=1E10cm-3
1. [BJT Forward-Active Current] For a npn BJT with cross-section as below: (a) [20%] Assuming VBE 0.8 V, calculate the base neutral region width (WB), and confirm whether WB< Ln. (Hint: consider the depletion widths at the base/emitter and base/collector junctions.) (b) [3090] Assuming VBE-0.8 V. calculate lc. IB and IE. Note: use the appended graphs for Ln and Dn BE 50 ?m 50 ?m Emitter Il Base 0.4 um Collector Active base region Nd(Emitter) 1 x 1020...
answer i-iv please
The NPN transistor in the circuit shown haes B-60 Assuming that the BJT is operating in the deep saturation mode ie. VCEsat-02y and VBE-07V ßforced-10. Question 3: 20% p-60) Assuming that the BJT is operating in the deep Rg i) Calculate collector current, Ic. (4%) ii) Calculate voltage VBB and base current,IB(6%) iii) If we keep VBB and Rc the same, i.e. at 1k2, what is the minimum value of RB to restore the transistor beta to...
Forward Active Reverse Active Cutoff Saturation 2. The minority carrier distribution in a NPN BJT under forward active bias is given in the following questions. On top of the figure, sketch the corresponding new minority carrier concentration when the given condition is changed. (To make the question simple, you may assume the depletion width remains unchanged in all questions. But you have to indicate the new equilibrium minority concentration if they are affected.) 6. a) collector doping is increased by...
question 3 and 4
Problem2 (30 points) Consider an npn bipolar transistor with the following characteristics Base Collector Emitter Na-5x 1016 cm3 Ng- 1015 cm3 N1018 cm3 DC- 12 cm-/sec DE 8 cm-/sec (diff coef.) DB 15 cm-/sec sec TEO 108 sec (life time) tB0 5x 10 tCo 10 sec xp 0.7 um (Base width) xg 0.8 um (emitter width) D Remember D/u= KT /q, and L n.p n.p A forward bias of 0.5 V is applied to the emitter-base...
Please explain part A in details thx!
Question 3 An n'pn Si BJT is shown in Figure Q3(a). The emitter is heavily doped with 1020 cm3 whereas the base and collector are lightly doped with 5x1018 and 3x1018, respectively. The lengths of emitter, base, and collector are 0.5um, 0.2um, and 0.5 um.. The dielectric constant of silicon is 11.8 and the intrinsic carrier concentration at 300 K is 1.5x1010 cm3. Assume that a 0.026 eV at 300 K. 0.99, e...
Ignore PSpice Simulation
Design the BJT current mirror shown in Figure 1 to replicate a 1 mA reference current at the collector of 02. Assume a scale current of 6.7 fA, V 74 V, and B-200. 1. Determine Ri such that IREF- 1 mA is the current, Ic, flowing into the collector of Qi 2. Calculate Io/IREF, where Io- Ic2. 3. Simulate the circuit in Figure 1 in PSpice. Use the SEDRA_LIB library for the Q2N3904 and enter the appropriate...
ASAP!
Question 1 [Soalan 1] (a) Describe the condition when a npn BJT transistor operates in saturation condition and what are the terminal currents and voltages conditions during saturation. [Terangkan keadaan bila satu transistor BJT npn beroperasi dalam keadaan tepu dan apakah keadaan arus dan voltan terminal semasa tepu. ] (20 Marks/Markah) (b) Consider the BJT transistor circuit in Figure 1. If Bpc = 100 and VBE = 0.65V, calculate: [Pertimbangkan litar transistor BJT dalam Rajah 1. Jika Bpc =...
18.
Question 18 (3 points) Consider the BJT amplifier circuit below. Let B=20. Let to=. The desired collector current is 1.5 mA. Assume VBE = 0.7 V. Use 3 digits of precision in your calculations. (3+7 pts) Use the Thevenin's equivalent circuit technique to determine the value of Rị that sets the base current to the value that produces the desired collector current. 41 Vec w +12 V R Rc 4k92 -Vc 01 10 kg ws
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