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4.2 The potential energy in a MOFSET device near the metal oxide interface is approximately V(x) - qEx forx > 0 where q is th

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Given -th -(2) 2 政 e d 2 141 2 4197-C (24 )%. 44疵 C11 ーベ -バー(5) 气, 계 어 kinet? c ene Y 7 y Eka ~ww е.upeddlo n cl2 ーベ7l n e 24 d趸 2m 2(2) 312 2 S12) 21m CA z 2 2 ユベ 2 212 L E 8 rm 2h 1 Ea C ,釙飞 LE 2- 2们 3 h2 min 31 ol 312 2 213 3 Hm 213 3 enea ot tho eecon2m dx 2 0 200 2 2 -#x2 2.Ym2m 3120 캬ー.INA nd g l 국ed 4dlad

å¨å.as, c< 2 m 2d 3 h no 2 Tn ã, Y 2m 23.( tqe) 2 211)

2 Ei33 min- enor

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